This disclosure describes systems, methods, and apparatus for multilayer superconducting structures comprising electroplated Rhenium, where the Rhenium operates in a superconducting regime at or above 4.2 K, or above 1.8 K where specific temperatures and times of annealing have occurred. The structure can include at least a first conductive layer applied to a substrate, where the Rhenium layer is electroplated to the first layer. A third layer formed from the same or a different conductor as the first layer can be formed atop the Rhenium layer.

A method for fabricating a second generation high-temperature superconductor (2G-HTS) tape, including: (S1) depositing a superconducting thin film on a surface of a ductile metal substrate with a buffer layer; (S2) forming a micro-holes array pattern on a surface of the superconducting thin film by etching using a reel-to-reel dynamic femtosecond infrared laser etching system, where the micro-holes array pattern covers the superconducting thin film; (S3) depositing a superconducting thick film on the surface of the superconducting thin film; and (S4) depositing a silver protective layer and a copper stabilization layer on a surface of the superconducting thick film.

In various embodiments, superconducting wires incorporate diffusion barriers composed of Nb alloys or Nb—Ta alloys that resist internal diffusion and provide superior mechanical strength to the wires.

Proposed are a thin film having single crystallinity and an excellent crystal orientation property, a method of manufacturing the same, and a semiconductor device, a battery device, a superconducting wire, and a superconducting article including the thin film having single crystallinity. The technical gist of the present disclosure includes a thin film having single crystallinity, which is formed by depositing a polycrystalline second material on an upper portion of a substrate including a polycrystalline first material and which has a crystal orientation property satisfying the following Relational Expression 1 at a grain boundary, a method of manufacturing the same, and a semiconductor device, a battery device, a superconducting wire, and a superconducting article including the thin film having single crystallinity.

0°<FWHM.sub.2≤3°  [Relational Expression 1] (FWHM.sub.2 is a full width at half maximum of a distribution curve of a misorientation angle at the grain boundary of the thin film).

Devices, systems, methods, computer-implemented methods, apparatus, and/or computer program products that can facilitate a switch device that shifts frequency of a resonator in a quantum device are provided. According to an embodiment, a device can comprise a readout resonator coupled to a qubit. The device can further comprise a switch device formed across the readout resonator that shifts frequency of the readout resonator based on position of the switch device. According to another embodiment, a device can comprise a bus resonator coupled to a plurality of qubits. The device can further comprise a switch device formed across the bus resonator that shifts frequency of the bus resonator based on position of the switch device.

This disclosure describes systems, methods, and apparatus for multilayer superconducting structures comprising electroplated Rhenium, where the Rhenium operates in a superconducting regime at or above 4.2 K, or above 1.8 K where specific temperatures and times of annealing have occurred. The structure can include at least a first conductive layer applied to a substrate, where the Rhenium layer is electroplated to the first layer. A third layer formed from the same or a different conductor as the first layer can be formed atop the Rhenium layer.

This superconducting wire includes: a strand including a superconducting material; and a stabilizer material for superconductor arranged in contact with the strand, wherein the stabilizer material for superconductor includes a copper material which contains one kind or two kinds or more of additive elements selected from Ca, Sr, Ba, and rare earth elements (RE) for a total amount of 3 ppm by mass or more and 400 ppm by mass or less, with the remainder being Cu and unavoidable impurities, the total concentration of the unavoidable impurities other than O, H, C, N, and S, which are gas components, is 5 ppm by mass or more and 100 ppm by mass or less, and compounds including one kind or two kinds or more selected from CaS, CaSO.sub.4, SrS, SrSO.sub.4, BaS, BaSO.sub.4, (RE)S, and (RE).sub.2SO.sub.2 are present in the matrix.

The present invention relates to an integrated reflective backshort fabricated with a phononic-isolated kinetic inductance detector or transition edge sensor. The integrated backshort includes: a silicon wafer; a reflective metal layer bonded to the silicon wafer; a silicon first layer disposed on the reflective metal layer; a structural second layer disposed on the first layer; a first superconductor layer disposed on the second layer as a kinetic inductance detector; and a second superconductor layer disposed on the second layer as leads, a microstrip, a capacitor or filter; wherein a phononic structure is etched in the second layer, leaving holes in the second layer; and wherein the etching penetrates through the holes into the second layer, and stopping on the reflective metal layer, leaving a space under the second layer where edges of the first layer etched under the second layer define a length of the integrated backshort.

According to an embodiment of the present invention, a system for non-invasively characterizing a qubit device includes a characterization probe chip. The characterization probe chip includes a substrate and a characterization resonator formed on a first surface of the substrate. The characterization resonator includes a superconducting stripline, and a superconducting antenna coupled to an end of the superconducting stripline, the superconducting antenna positioned to align with a qubit on the qubit device being characterized. The characterization probe chip also includes and a superconducting ground plane formed on a second surface of the substrate, the second surface opposing the first surface. In operation, the superconducting antenna is configured to capacitively couple the characterization resonator to the qubit aligned with the superconducting antenna for characterization of the qubit.

According to an embodiment of the present invention, a system for non-invasively characterizing a qubit device includes a characterization probe chip. The characterization probe chip includes a substrate and a characterization resonator formed on a first surface of the substrate. The characterization resonator includes a superconducting stripline, and a superconducting antenna coupled to an end of the superconducting stripline, the superconducting antenna positioned to align with a qubit on the qubit device being characterized. The characterization probe chip also includes and a superconducting ground plane formed on a second surface of the substrate, the second surface opposing the first surface. In operation, the superconducting antenna is configured to capacitively couple the characterization resonator to the qubit aligned with the superconducting antenna for characterization of the qubit.