The invention describes a memory device which combines a switchable resistive element and a superconductor element electrically in parallel. The switchable resistive element comprises an active material, which is switchable between first and second values of electrical resistivity ρ.sub.1 and ρ.sub.2 at the same temperature, wherein ρ.sub.1 is different to ρ.sub.2. The superconductor element is operable so that at least part of the superconductor element is switchable from a superconducting state to a non-superconducting state. When the superconductor element is switched from the superconducting state to the non-superconducting state, a current injection is provided through the switchable resistive element capable of switching the switchable resistive element between said first and second values of electrical resistivity.

The invention describes a memory device which combines a switchable resistive element and a superconductor element electrically in parallel. The switchable resistive element comprises an active material, which is switchable between first and second values of electrical resistivity ρ.sub.1 and ρ.sub.2 at the same temperature, wherein ρ.sub.1 is different to ρ.sub.2. The superconductor element is operable so that at least part of the superconductor element is switchable from a superconducting state to a non-superconducting state. When the superconductor element is switched from the superconducting state to the non-superconducting state, a current injection is provided through the switchable resistive element capable of switching the switchable resistive element between said first and second values of electrical resistivity.

A programmable circuit includes a superconducting component arranged in a multi-dimensional array of alternating narrow and wide portions. The programmable circuit further includes a plurality of heat sources, each heat source configured to selectively provide heat to a respective narrow portion sufficient to transition the respective narrow portion from a superconducting state to a non-superconducting state. The programmable circuit further includes a plurality of electrical terminals, each electrical terminal coupled to a respective wide portion of the multi-dimensional array.

A programmable circuit includes a superconducting component arranged in a multi-dimensional array of alternating narrow and wide portions. The programmable circuit further includes a plurality of heat sources, each heat source configured to selectively provide heat to a respective narrow portion sufficient to transition the respective narrow portion from a superconducting state to a non-superconducting state. The programmable circuit further includes a plurality of electrical terminals, each electrical terminal coupled to a respective wide portion of the multi-dimensional array.

A system (100) for controlling temperature of a persistent current switch (120) operating in a background magnetic field includes a heat exchanger (138), a loop tube (135), a ball valve (245) and multiple electromagnets (251, 252). The heat exchanger disperses heat to a cryocooler (106). The loop tube enables flow of coolant to convectively transfer thermal energy generated by the persistent current switch to the heat exchanger. The ball valve is integrated with the loop tube between the persistent current switch and the heat exchanger, and contains a ferromagnetic ball (250). The electromagnets are positioned outside the loop tube adjacent to the ball valve, where energizing a first electromagnet of the multiple electromagnets magnetically moves the ferromagnetic ball to a first position opening the loop tube and enabling the flow of the coolant, and energizing a second electromagnets magnetically moves the ferromagnetic ball to a second position closing the loop tube and blocking the flow of the coolant.

The various embodiments described herein include methods, devices, and systems for fabricating and operating diodes. In one aspect, an electrical circuit includes: (1) a diode component having a particular energy band gap; (2) an electrical source electrically coupled to the diode component and configured to bias the diode component in a particular state; and (3) a heating component thermally coupled to a junction of the diode component and configured to selectively supply heat corresponding to the particular energy band gap.

The various embodiments described herein include methods, devices, and systems for fabricating and operating diodes. In one aspect, an electrical circuit includes: (1) a diode component having a particular energy band gap; (2) an electrical source electrically coupled to the diode component and configured to bias the diode component in a particular state; and (3) a heating component thermally coupled to a junction of the diode component and configured to selectively supply heat corresponding to the particular energy band gap.

A programmable circuit includes a superconducting component arranged in a multi-dimensional array of alternating narrow and wide portions. The programmable circuit further includes a plurality of heat sources, each heat source configured to selectively provide heat to a respective narrow portion sufficient to transition the respective narrow portion from a superconducting state to a non-superconducting state. The programmable circuit further includes a plurality of electrical terminals, each electrical terminal coupled to a respective wide portion of the multi-dimensional array.

A programmable circuit includes a superconducting component arranged in a multi-dimensional array of alternating narrow and wide portions. The programmable circuit further includes a plurality of heat sources, each heat source configured to selectively provide heat to a respective narrow portion sufficient to transition the respective narrow portion from a superconducting state to a non-superconducting state. The programmable circuit further includes a plurality of electrical terminals, each electrical terminal coupled to a respective wide portion of the multi-dimensional array.

The various embodiments described herein include methods, devices, and systems for fabricating and operating transistors. In one aspect, a transistor includes: (1) a semiconducting component configured to operate in an on state at temperatures above a semiconducting threshold temperature; and (2) a superconducting component configured to operate in a superconducting state while: (a) a temperature of the superconducting component is below a superconducting threshold temperature; and (b) a first current supplied to the superconducting component is below a current threshold; where: (i) the semiconducting component is located adjacent to the superconducting component; and (ii) in response to a first input voltage, the semiconducting component is configured to generate an electromagnetic field sufficient to lower the current threshold such that the first current exceeds the lowered current threshold, thereby transitioning the superconducting component to a non-superconducting state.