The various embodiments described herein include methods, devices, and systems for fabricating and operating transistors. In one aspect, a transistor includes: (1) a semiconducting component configured to operate in an on state at temperatures above a semiconducting threshold temperature; and (2) a superconducting component configured to operate in a superconducting state while: (a) a temperature of the superconducting component is below a superconducting threshold temperature; and (b) a first current supplied to the superconducting component is below a current threshold; where: (i) the semiconducting component is located adjacent to the superconducting component; and (ii) in response to a first input voltage, the semiconducting component is configured to generate an electromagnetic field sufficient to lower the current threshold such that the first current exceeds the lowered current threshold, thereby transitioning the superconducting component to a non-superconducting state.

A device includes a superconductor layer and a piezoelectric layer positioned adjacent to the superconductor layer. The piezoelectric layer is configured to apply a first strain to the superconductor layer in response to receiving a first voltage that is below a predefined voltage threshold and to apply a second strain to the superconductor layer in response to receiving a second voltage that is above the predefined voltage threshold. While the device is maintained below a superconducting threshold temperature for the superconductor layer and is supplied with current below a superconducting threshold current for the superconductor layer, the superconductor layer is configured to 1) operate in a superconducting state when the piezoelectric layer applies the first strain to the superconductor layer and 2) operate in an insulating state when the piezoelectric layer applies the second strain to the superconductor layer.

A device includes a superconductor layer and a piezoelectric layer positioned adjacent to the superconductor layer. The piezoelectric layer is configured to apply a first strain to the superconductor layer in response to receiving a first voltage that is below a predefined voltage threshold and to apply a second strain to the superconductor layer in response to receiving a second voltage that is above the predefined voltage threshold. While the device is maintained below a superconducting threshold temperature for the superconductor layer and is supplied with current below a superconducting threshold current for the superconductor layer, the superconductor layer is configured to 1) operate in a superconducting state when the piezoelectric layer applies the first strain to the superconductor layer and 2) operate in an insulating state when the piezoelectric layer applies the second strain to the superconductor layer.

The present invention provides a sensor and measuring method. The sensor comprises multiple-layer organo-metallic cross-linked polymers forming various superlattice nanostructured biomimetic membranes for sensing Cooper-pair wave transmissions causing intrinsic magnetic flux quantum observed based on a Josephson junction toroidal array and a controllable state-switch valve having a double-pole electron-relay that promoted Cooper pairs coherently transmitting waves in the membranes within and cross the Josephson toroidal junction barriers at zero-bias. The One-Device-Assembly system enables a femto-joule energy consumption for quantum qubits; or acting as an energy storage device that stores energy 1.53 MJ/cm.sup.2 for an application in automobile vehicles.

An electronic device includes a substrate and a layer of superconducting material disposed over the substrate. The layer of superconducting material includes a first wire and a loop that is (i) distinct and separate from the first wire and (ii) capacitively coupled to the first wire while the loop and the first wire are in a superconducting state.

Hotspot monitoring system for superconducting devices including: —a superconductor; —a first optical waveguide attached to the superconductor for providing a first optical signal; —a second optical waveguide for providing a reference signal; and—interference means configured to overlay or superimpose the first optical signal and the reference optical signal to produce an optical interference signal.

Memory devices and methods are provided. In one aspect, a memory device may comprise a first field element, a second field element, a movable magnetic element, and a first heater. The first field element may be a superconductor. The second field element may be disposed facing the first field element and at a first distance from the first field element. The movable magnetic element may be repelled by the second field element and disposed in a space between the first field element and the second field element. The first heater may be arranged near the first field element. The movable magnetic element may move toward the first field element in response to a first electric current that passes through the first heater.

Superconducting switching devices of electrically-polarizable ferroelectric materials and electrically conductive materials with control electrodes. Superconducting states of the superconducting switching devices are determined by polarization states of the electrically-polarizable ferroelectric materials and voltages applied to the control electrodes.

An electronic component having an asymmetric impedance is provided. The component includes first, second and third branches that connect at a common node. The component includes a first portion of superconducting material disposed along the first branch and a second portion of superconducting material disposed along the second branch. The component includes a first device disposed along the first branch and configured to transition the second portion of the superconducting material to a non-superconducting state when a current between a first terminal of the first device and a second terminal of the first device exceeds a first threshold value and a second device disposed along the second branch and configured to transition the first portion of the superconducting material to a non-superconducting state when a current between a first terminal of the second device and a second terminal of the second device exceeds a second threshold value.

Superconducting switching devices of electrically-polarizable ferroelectric materials and electrically conductive materials with control electrodes. Superconducting states of the superconducting switching devices are determined by polarization states of the electrically-polarizable ferroelectric materials and voltages applied to the control electrodes.