An oxide superconducting wire connection structure includes: connection target wires, each of which includes an oxide superconducting wire including a superconducting layer on a substrate; and connection superconducting wires that connects the connection target wires. The connection superconducting wires are narrower in width than the connection target wires. Current characteristics of the connection superconducting wires are equal to or greater than current characteristics of the connection target wires.

An airbridge implements connections on a superconducting chip. It comprises a strip of superconductive material between a first superconductive area and a second superconductive area. A first end of said strip comprises a first planar end portion attached to and parallel with said first superconductive area, and a second end of said strip comprises a respective second planar end portion. A middle portion is located between said first and second planar end portions, forming a bend away from a plane defined by the surfaces of the first and second superconductive areas. First and second separation lines separate the end portions from the middle portion. At least one of said first and second separation lines is directed otherwise than transversally across said strip.

A configuration of wirebonds for reducing cross-talk in a quantum computing chip includes a first wirebond coupling a first conductor of a quantum computing circuit with a first conductor of an external circuit. The embodiment further includes in the configuration a second wirebond coupling a second conductor of the quantum computing circuit with a second conductor of the external circuit, wherein the first wirebond and the second wirebond are separated by a first vertical distance in a direction of a length of the first conductor.

Devices, systems, and/or methods that can facilitate local heating of a superconducting flux biasing loop are provided. According to an embodiment, a device can comprise a substrate having a superconducting flux bias circuit comprising a biasing loop coupled to a flux controlled qubit device. The device can further comprise a heating device coupled to the biasing loop.

Devices, systems, and/or methods that can facilitate local heating of a superconducting flux biasing loop are provided. According to an embodiment, a method can comprise forming on a substrate a biasing loop and a flux controlled qubit device of a superconducting flux bias circuit. The method can further comprise forming a heating device on the substrate to couple the heating device to the biasing loop.

The various embodiments described herein include methods, devices, and circuits for reducing or minimizing current crowding effects in manufactured superconductors. In some embodiments, a superconducting circuit includes: (1) a first component having a first connection point, the first connection point having a first width; (2) a second component having a second connection point, the second connection point having a second width that is larger than the first width; and (3) a connector electrically connecting the first connection point and the second connection point, the connector including: (a) a first taper having a first slope and a non-linear shape; (b) a second taper having a second slope; and (c) a connecting portion connecting the first taper to the second taper, the connecting portion having a third slope that is less than the first slope and less than the second slope.

A superconducting wire connector includes superconducting wires and a sintered body containing MgB.sub.2. The superconducting wires are connected by the sintered body. At least one of the superconducting wires includes a superconducting core having a first outer surface. The sintered body is in contact with the first outer surface. A method of connecting superconducting wires by a sintered body containing MgB.sub.2 includes exposing a superconducting core of at least one of the superconducting wires by removing a portion, positioned in the middle in a longitudinal direction of the at least one of the superconducting wires, of a metal sheath disposed around the superconducting core, disposing the at least one of the superconducting wires through a container, filling the container with a raw material of MgB.sub.2, and forming the sintered body being in contact with an outer surface of the superconducting core by sintering the raw material filled in the container.

Among other things, an apparatus comprises quantum units; and couplers among the quantum units. Each coupler is configured to couple a pair of quantum units according to a quantum Hamiltonian characterizing the quantum units and the couplers. The quantum Hamiltonian includes quantum annealer Hamiltonian and a quantum governor Hamiltonian. The quantum annealer Hamiltonian includes information bearing degrees of freedom. The quantum governor Hamiltonian includes non-information bearing degrees of freedom that are engineered to steer the dissipative dynamics of information bearing degrees of freedom.

A configuration of wirebonds for reducing cross-talk in a quantum computing chip includes a first wirebond coupling a first conductor of a quantum computing circuit with a first conductor of an external circuit. The embodiment further includes in the configuration a second wirebond coupling a second conductor of the quantum computing circuit with a second conductor of the external circuit, wherein the first wirebond and the second wirebond are separated by a first vertical distance in a direction of a length of the first conductor.

This superconducting wire includes: a strand including a superconducting material; and a stabilizer material for superconductor arranged in contact with the strand, wherein the stabilizer material for superconductor includes a copper material which contains one kind or two kinds or more of additive elements selected from Ca, Sr, Ba, and rare earth elements (RE) for a total amount of 3 ppm by mass or more and 400 ppm by mass or less, with the remainder being Cu and unavoidable impurities, the total concentration of the unavoidable impurities other than O, H, C, N, and S, which are gas components, is 5 ppm by mass or more and 100 ppm by mass or less, and compounds including one kind or two kinds or more selected from CaS, CaSO.sub.4, SrS, SrSO.sub.4, BaS, BaSO.sub.4, (RE)S, and (RE).sub.2SO.sub.2 are present in the matrix.