Multiple Josephson toroidal vertex quantum superconductive/memristive and superconductive/memcapacitive devices were invented with various superlattice structures, which work at room temperature without an applied external magnetic flux. The first type of the superlattices of the devices comprises of multiple-layers of organometallic polymers on gold chips by self-assembling that mimics the function of Matrix Metalloproteinase-2 (MMP-2). Another type of quantum superconductor/memristor comprises of multiple-organic polymers cross-linked with MMP-2 protein forming Josephson toroidal vertex on the gold surface. Models of the quantum superconductive/memristive and superconductive/memcapacitive devices were fabricated in nano superlattice structures and the devices module configurations were described. Three different methods were used to evaluate the devices' applications in sub fg/mL collagen-1 sensing, energy storage, and the super-position characteristics as a potential quantum bit device. The superconductivity, memristive, and memcapacitive functions were also evaluated in multiple methods, respectively.

A semiconductor-superconductor hybrid structure includes a semiconductor layer and a superconductor heterostructure on the semiconductor layer. The superconductor heterostructure includes a first superconductor layer on the semiconductor layer and a second superconductor layer on the first superconductor layer. The first superconductor layer comprises a first superconducting material and the second superconductor layer comprises a second superconducting material that is different from the first superconducting material. By providing the superconductor heterostructure as multiple layers of different superconducting materials, the superconducting and physical properties of the superconductor heterostructure can be improved compared to conventional superconducting homostructures, thereby increasing the performance of the semiconductor-superconductor hybrid structure.

A superconducting article includes a substrate and a superconducting metal oxide film formed on the substrate. The metal oxide film including ions of an alkali metal, ions of a transition metal, and ions of an alkaline earth metal or a rare earth metal. For instance, the metal oxide film can include Rb ions, La ions, and Cu ions. The superconducting metal oxide film can have a critical temperature for onset of superconductivity of greater than 250 K, e.g., greater than room temperature.

A first aspect provides a topological quantum computing device comprising a network of semiconductor-superconductor nanowires, each nanowire comprising a length of semiconductor formed over a substrate and a coating of superconductor formed over at least part of the semiconductor; wherein at least some of the nanowires further comprise a coating of ferromagnetic insulator disposed over at least part of the semiconductor. A second aspect provides a method of fabricating a quantum or spintronic device comprising a heterostructure of semiconductor and ferromagnetic insulator, by: forming a portion of the semiconductor over a substrate in a first vacuum chamber, and growing a coating of the ferromagnetic insulator on the semiconductor by epitaxy in a second vacuum chamber connected to the first vacuum chamber by a vacuum tunnel, wherein the semiconductor comprises InAs and the ferromagnetic insulator comprises EuS.

Various articles and devices can be manufactured to take advantage of a what is believed to be a novel thermodynamic cycle in which spontaneity is due to an intrinsic entropy equilibration. The novel thermodynamic cycle exploits the quantum phase transition between quantum thermalization and quantum localization. Preferred devices include a phonovoltaic cell, a rectifier and a conductor for use in an integrated circuit.

A method of fabricating an electrical contact junction that allows current to flow includes: providing a substrate including a first layer of superconductor material; removing a native oxide of the superconductor material of the first layer from a first region of the first layer; forming a capping layer in contact with the first region of the first layer, in which the capping layer prevents reformation of the native oxide of the superconductor material in the first region; forming, after forming the capping layer, a second layer of superconductor material that electrically connects to the first region of the first layer of superconductor material to provide the electrical contact junction that allows current to flow.

According to an embodiment, a radiation detector includes a plurality of absorbers, a resistor, and a heat bath member. The absorbers absorb radiation. The resistor undergoes a change in resistance according to a change in temperature of the absorbers. The heat bath member is maintained at a temperature at which resistance of the resistor becomes equal to a specific resistance value, and is positioned to be in thermal contact with the resistor. The absorbers are positioned to be in contact with the resistor, and are arranged at a distance from each other.

A first aspect provides a topological quantum computing device comprising a network of semiconductor-superconductor nanowires, each nanowire comprising a length of semiconductor formed over a substrate and a coating of superconductor formed over at least part of the semiconductor; wherein at least some of the nanowires further comprise a coating of ferromagnetic insulator disposed over at least part of the semiconductor. A second aspect provides a method of fabricating a quantum or spintronic device comprising a heterostructure of semiconductor and ferromagnetic insulator, by: forming a portion of the semiconductor over a substrate in a first vacuum chamber, and growing a coating of the ferromagnetic insulator on the semiconductor by epitaxy in a second vacuum chamber connected to the first vacuum chamber by a vacuum tunnel, wherein the semiconductor comprises InAs and the ferromagnetic insulator comprises EuS.

The present invention provides a superconducting block, comprising, a pair of cores with materials that are electrically conductive in their normal states. The pair of cores are embedded in the shell with an intervening centroidal distance, with a material that is electrically conductive in its normal state. The embedded pair of cores and the shell are configured to be superconductive. The present invention also provides a superconducting nanocrystal with at least the superconducting block. The present invention also provides a superconductive device with at least the superconducting block and the superconducting nanocrystal. The present invention further provides a process for fabricating the superconducting block and superconducting crystal. The present invention provides superconductors (superconducting block, superconducting nanocrystals) that can be employed to attain superconductivity at high temperatures, corresponding to temperatures existing in the terrestrial ambient and even higher.

Electrical devices are disclosed. The devices include an insulating substrate. A UO.sub.2+x crystal or oriented crystal UO.sub.2+x film is on a first portion of the substrate. The UO.sub.2+x crystal or film originates and hosts a non-equilibrium polaronic quantum phase-condensate. A first lead on a second portion of the substrate is in electrical contact with the UO.sub.2+x crystal or film. A second lead on a third portion of the surface is in electrical contact with the UO.sub.2+x crystal or film. The leads are isolated from each other. A UO.sub.2+x excitation source is in operable communication with the UO.sub.2+x crystal or film. The source is configured to polarize a region of the crystal or film thereby activating the non-equilibrium quantum phase-condensate. One source state causes the UO.sub.2+x crystal or film to be conducting. Another source state causes the UO.sub.2+x crystal or film to be non-conductive.