A composition of matter consisting primarily of a stabilizing element and a transition metal oxide, wherein the transition metal oxide is an anti-ferromagnetic Mott insulator with strong spin orbit interactions, and the composition of matter has a canted crystal structure.

An integrated neuron circuit structure comprising at least one thin-film resistor, one Metal Insulator Metal capacitor and one Negative Differential Resistance device.

An integrated neuron circuit structure comprising at least one thin-film resistor, one Metal Insulator Metal capacitor and one Negative Differential Resistance device.

A metal-insulator-semiconductor-insulator-metal (MISIM) device includes a semiconductor layer, an insulating layer disposed over an upper surface of the semiconductor layer, a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface, and first and second electrodes disposed over the insulating layer and spaced-apart from each other.

The invention relates to a Gunn diode comprising a first contact layer (110); a second contact layer (120); an active layer (130) based on a gallium nitride (GaN)-based semiconductor material, said active layer being formed between the first contact layer (110) and the second contact layer (120); a substrate (140) on which the active layer (130) is formed together with the first contact layer (110) and the second contact layer (120); and an optical inlet (150) for a laser (50) in order to facilitate or trigger a charge carrier transfer between extrema (210, 220) of the energy bands of the active layer (130) by means of laser irradiation.

A metal-insulator-semiconductor-insulator-metal (MISIM) device includes a semiconductor layer, an insulating layer disposed over an upper surface of the semiconductor layer, a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface, and first and second electrodes disposed over the insulating layer and spaced-apart from each other.

An integrated neuron circuit structure comprising at least one thin-film resistor, one Metal Insulator Metal capacitor and one Negative Differential Resistance device.

A Gunn diode is disclosed which comprises a first contact layer, a second contact layer, and an active layer based on a gallium nitride (GaN) semiconductor material having a base surface and a side surface non-parallel thereto. Optionally, related materials such as aluminum indium gallium nitride (AlInGaN) materials may also be used as the active layer. The first contact layer electrically contacts the side surface to form a side contact. The second contact layer forms an electrical contact for the base surface, so that a maximum of the electric field strength is formed when an electric voltage is applied between the first contact layer and the second contact layer at the side contact.

Gunn diodes are formed using a set of layered semiconductor materials, with one or more n-doped upper layers and contacts over the uppermost semiconductor layer. A diode may include alternating layers of indium, gallium, and arsenic (e.g., InGaAs) and indium, aluminum, and arsenic (e.g., InAlAs), where an uppermost layer of the stack includes two regions of highly-doped InGaAs, and a layer of InAlAs is directly below the two regions of highly-doped InGaAs. The InAlAs layer forms the active region and is n-doped to a lower dopant concentration than the two InGaAs regions. Further alternating layers of InGaAs and InAlAs may be below the active region. A gate may be included between the two contacts and over the active region; the gate may apply a bias voltage to the active region. The Gunn diodes may advantageously be used in low-temperature environments, such as cooled IC devices.