Subject matter disclosed herein may relate to correlated electron switch devices, and may relate more particularly to integrated circuit fabrics including correlated electron switch devices having various impedance characteristics.

A technique relates to a semiconductor device. First metal contacts are formed on top of a substrate. The first metal contacts are arranged in a first direction, and the first metal contacts are arranged such that areas of the substrate remain exposed. Insulator pads are positioned at predefined locations on top of the first metal contacts, such that the insulator pads are spaced from one another. Second metal contacts are formed on top of the insulator pads, such that the second metal contacts are arranged in a second direction different from the first direction. The first and second metal contacts sandwich the insulator pads at the predefined locations. Surface-sensitive conductive channels are formed to contact the first metal contacts and the second metal contacts. Four-terminal devices are defined by the surface-sensitive conductive channels contacting a pair of the first metal contacts and contacting a pair of the metal contacts.

Subject matter disclosed herein may relate to correlated electron switches that are capable of asymmetric set or reset operations.

The inventive concept shows the embodiment of t-switch which is a MIT 3-terminal device based on a Hole-driven MIT theory and a technology for removing an ESD noise signal which is one of applications of the t-switch. The t-switch includes three terminals of Inlet, Outlet and Control, and a metal-insulator transition (MIT) occurs at an Outlet layer by a current flowing through the Control terminal. In the t-switch, a high resistor is connected to the Control terminal and thereby an ESD noise signal of high voltage flows through the Inlet-Outlet without damaging the device.

Tunneling field effect transistors (TFETs) including a variable bandgap channel are described. In some embodiments, one or more bandgap characteristics of the variable bandgap channel may be dynamically altered by at least one of the application or withdrawal of a force, such as a voltage or electric field. In some embodiments the variable bandgap channel may be configured to modulate from an ON to an OFF state and vice versa in response to the application and/or withdrawal of a force. The variable bandgap channel may exhibit a bandgap that is smaller in the ON state than in the OFF state. As a result, the TFETs may exhibit one or more of relatively high on current, relatively low off current, and sub-threshold swing below 60 mV/decade.

Electrolyte gating with ionic liquids is a powerful tool for inducing conducting phases in correlated insulators. An archetypal correlated material is VO.sub.2 which is insulating only at temperatures below a characteristic phase transition temperature. We show that electrolyte gating of epitaxial thin films of VO.sub.2 suppresses the metal-to-insulator transition and stabilizes the metallic phase to temperatures below 5 K even after the ionic liquid is completely removed. We provide compelling evidence that, rather than electrostatically induced carriers, electrolyte gating of VO.sub.2 leads to the electric field induced creation of oxygen vacancies, and the consequent migration of oxygen from the oxide film into the ionic liquid.

Subject matter disclosed herein may relate to programmable current for correlated electron switches.

Provided is an electronic device including a semiconductor substrate, a single-crystal first transition metal oxide layer on the semiconductor substrate, and a single-crystal second transition metal oxide layer spaced apart from the semiconductor substrate with the single-crystal first transition metal oxide layer interposed therebetween. The first transition metal oxide layer and the second transition metal oxide layer are in contact with each other. The semiconductor substrate, the first transition metal oxide layer, and the second transition metal oxide layer include different materials from each other. The first transition metal oxide layer and the second transition metal oxide layer have the same crystal direction.

A transistor comprises a planar layer of a topological material located between a gate electrode and a dielectric layer. The topological material exhibits a topological phase transition between a trivial state and a non-trivial state at a critical electric field strength on application of an electric field in a direction perpendicular to the planar layer. The topological material exhibits a change in bandgap, in the presence of the electric field, having a Rashba spin-dependent bandgap contribution that is at least three times as large as a non-spin-dependent bandgap contribution.