The present invention provides a quantum dot light emitting element, a manufacture method thereof and a liquid crystal display device. The quantum dot light emitting element comprises a substrate, an anode, a Hole Injection and Hole Transporting Layer, a quantum dot light emitting layer, an Electron Injection and Electron Transporting layer and a cathode, and the anode is located on the substrate, and the anode and the cathode are located at the same side of the substrate, and are opposite and separately located, and the Hole Injection and Hole Transporting Layer, the quantum dot light emitting layer and the Electron Injection and Electron Transporting layer are sequentially sandwiched between the anode and the cathode, and one surface of the Hole Injection and Hole Transporting Layer is connected with the anode, wherein the Electron Injection and Electron Transporting layer comprises water/alcohol soluble conjugated polymer.

There is provided an electrode structure for preventing cracks occurring in a metal electrode due to heating in a manufacturing process in the case of stacking an insulating resin and the metal electrode which are different in thermal expansion coefficient. An electrode for a semiconductor circuit, stacked on a substrate made of an insulating resin, has an electrode structure composed of a main electrode including a slit formed by cutting out a part thereof to prevent occurrence of a crack in a manufacturing process caused by a difference in thermal expansion coefficient from the substrate, and an auxiliary electrode that covers the slit in the main electrode. No slit is provided but a bridge is formed at a portion where the slit in the main electrode and the slit in the auxiliary electrode overlap with each other, thereby eliminating a gap portion where the electrode does not exist.

A battery includes a Casimir-effect powered cell (Casimir cell). The Casimir cell includes a first conductive wall; a second conductive wall that faces the first conductive wall; and a conductive antenna disposed in a cavity gap that is a space between the first conductive wall and the second conductive wall. The conductive antennal faces the first conductive wall and the second conductive wall. The first conductive wall and the second conductive wall produce a same first voltage potential. The conductive antenna produces a second voltage potential that is different from the first voltage potential. A voltage that is the difference between the first voltage potential and the second voltage potential is generated by Casimir phenomenon based on arrangement of the conductive antenna between the first conductive wall and the second conductive wall.

Techniques facilitating frequency allocation in multi-qubit circuits are provided. In one example, a computer-implemented method comprises determining, by a device operatively coupled to a processor, an estimated fabrication yield associated with respective qubit chip configurations by conducting simulations of the respective qubit chip configurations at respective frequency offsets; and selecting, by the device, a qubit chip configuration from among the respective qubit chip configurations based on the estimated fabrication yield associated with the respective qubit chip configurations.

Generally discussed herein are techniques for and systems and apparatuses configured to control phonons using an electric field. In one or more embodiments, an apparatus can include electrical contacts, two quantum dots embedded in a semiconductor such that when an electrical bias is applied to the electrical contacts, the electric field produced by the electrical bias is substantially parallel to an axis through the two quantum dots, and a phononic wave guide coupled to the semiconductor, the phononic wave guide configured to transport phonons therethrough.

Generally discussed herein are techniques for and systems and apparatuses configured to control phonons using an electric field. In one or more embodiments, an apparatus can include electrical contacts, two quantum dots embedded in a semiconductor such that when an electrical bias is applied to the electrical contacts, the electric field produced by the electrical bias is substantially parallel to an axis through the two quantum dots, and a phononic wave guide coupled to the semiconductor, the phononic wave guide configured to transport phonons therethrough.

A quantum device is provided that includes controllably quantum mechanically coupled dangling bonds extending from a surface of a semiconductor material. Each of the controllably quantum mechanically coupled dangling bonds has a separation of at least one atom of the semiconductor material. At least one electrode is provided for selectively modifying an electronic state of the controllably quantum mechanically coupled dangling bonds. By providing at least one additional electron within the controllably quantum mechanically coupled dangling bonds with the proviso that there exists at least one unoccupied dangling bond for each one additional electron present, the inventive device is operable at least to 293 degrees Kelvin and is largely immune to stray electrostatic perturbations. Room temperature operable quantum cellular automata and qubits are constructed therefrom.

An electronic device for implementing digital functions comprising a first and a second electrode regions, separated by an interposing region comprising a dielectric region, is described. The first and the second electrode regions comprise at least one first electrode and at least one second electrode, respectively, configured to generate in the interposing region an electric field depending on an electric potential difference applied thereto. In the interposing region, a molecular layer is comprised, which is composed of a plurality of molecules, each being capable of assuming one or more states, in a controllable manner, depending on a sensed electric field. The dielectric region has a spatially variable dielectric profile, to determine a respective spatially variable field profile of the sensed electric field at the molecular layer.

A method for manufacturing a substrate for surface-enhanced Raman spectography, includes creating a supporting structure including microstructured pattern including a top and sidewalls; depositing a multilayer on the supporting structure with the multilayer including two metal layers and an intermediate layer arranged between the two metal layers, with the intermediate layer being carried out in a material that can be selectively etched with respect to the metal layers; etching a portion of the multilayer deposited on the top of the microstructured pattern in such a way as to expose ends each layer of the multilayer; selective etching of the ends of the intermediate layers in such a way as to form cavities between the ends of two successive metal layers.

Example methods and mechanisms are described herein for implementing and adiabatically operating a topological quantum computing (TQC) phase gate that complements the existing Clifford operations, and thereby allows universal quantum computation with Majorana systems. Further embodiments include a testing system for the phase gate that is feasible with Majorana zero modes and demonstrates violations of the CHSH-Bell inequality. Further, the design used for the testing of the inequality leads directly to a practical platforms for performing universal TQC with Majorana wires in which explicit braiding need never occur. Thus, certain embodiments of the disclosed technology involve three synergistically connected aspects of anyonic TQC the context of the currently active area of using MZMs for topological quantum computation): a practical phase gate for universal topological quantum computation using MZMs, a precise protocol (using CHSH inequality) for testing that the desired gate operation has been achieved, and bypassing the necessity of MZM braiding (and so avoiding, e.g., problems of nonadiabaticity in the braids).