Patent classifications
H10N99/05
Non-equilibrium polaronic quantum phase-condensate based electrical devices
Electrical devices operating in a range of 273 C. to 100 C. are disclosed. The devices include an insulating substrate. A UO.sub.2+x crystal or oriented crystal UO.sub.2+x film is on a first portion of the substrate. The UO.sub.2+x crystal or film originates and hosts a non-equilibrium polaronic quantum phase-condensate. A first lead on a second portion of the substrate is in electrical contact with the UO.sub.2+x crystal or film. A second lead on a third portion of the surface is in electrical contact with the UO.sub.2+x crystal or film. The leads are isolated from each other. A UO.sub.2+x excitation source is in operable communication with the UO.sub.2+X crystal or film. The source is configured to polarize a region of the crystal or film thereby activating the non-equilibrium quantum phase-condensate. One source state causes the UO.sub.2+X crystal or film to be conducting. Another source state causes the UO.sub.2+x crystal or film to be non-conductive.
Measurement Reduction Via Orbital Frames Decompositions On Quantum Computers
A hybrid quantum classical (HQC) computer, which includes both a classical computer component and a quantum computer component, implements improvements to expectation value estimation in quantum circuits, in which the number of shots to be performed in order to compute the estimation is reduced by applying a quantum circuit that imposes an orbital rotation to the quantum state during each shot instead of applying single-qubit context-selection gates. The orbital rotations are determined through the decomposition of a Hamiltonian or another objective function into a set of orbital frames. The variationally minimized expectation value of the Hamiltonian or the other objective function may then be used to determine the extent of an attribute of the system, such as the value of a property of the electronic structure of a molecule, chemical compound, or other extended system.
QUANTUM TUNNELING MATTER-WAVE TRANSISTOR SYSTEM
The present invention provides an matter-wave transistor in which the flow of particles (e.g., atoms and molecules) through the transistor is a result of resonant tunneling from a source well, through a gate well and into a drain well (as opposed to being a result of collisions, as in a classical atomtronic transistor). The transistor current of matter-wave particles can be controlled as a function of the breadth of resonant tunneling conditions of the gate well. For example, the resonant tunneling conditions of a gate well that does not include a dipole-oscillating Bose-Einstein condensate (DOBEC) can be broadened by including a DOBEC in the gate well. Similarly, the breadth of resonant tunneling conditions of the gate well can be changed by changing the particle population of a DOBEC in the gate well.
FREQUENCY ALLOCATION IN MULTI-QUBIT CIRCUITS
Techniques facilitating frequency allocation in multi-qubit circuits are provided. In one example, a computer-implemented method comprises determining, by a device operatively coupled to a processor, an estimated fabrication yield associated with respective qubit chip configurations by conducting simulations of the respective qubit chip configurations at respective frequency offsets; and selecting, by the device, a qubit chip configuration from among the respective qubit chip configurations based on the estimated fabrication yield associated with the respective qubit chip configurations.
QUANTUM MECHANICAL FRAMEWORK FOR INTERACTION OF OAM WITH MATTER AND APPLICATIONS IN SOLID STATES, BIOSCIENCES AND QUANTUM COMPUTING
A method comprises first generating a plane wave light beam. At least one orbital angular momentum is applied to the plane wave light beam to generate and OAM light beam. Transitions of electrons between quantized states within a semiconductor material are controlled responsive to the at least one orbital angular momentum applied to the plane wave light beam. The OAM light beam is transmitted at the semiconductor material to induce the transitions of the electrons between the quantize states within the semiconductor material.
Vertical quantum transistor
A vertical transistor includes two portions of a gate conductor that extend within a layer of insulator. An opening extending through the later of insulator includes source, channel and drain regions form by epitaxy operations. A thickness of the portions of the gate conductor decreases in the vicinity of the channel region.
Josephson junction-based transceiver
Disclosed is a transceiver that includes a three-dimensional array of Josephson junctions. When transmitting, the junctions drive an array of micro-antennas. When receiving, the micro-antennas drive the array of Josephson junctions. By extending the junction array into the third dimension, this transceiver packages a large number of Josephson junctions into a small volume, thus increasing the power of a transmitted beam. Multiple different micro-antenna arrays can be included, thus allowing the transceiver to work efficiently at multiple frequency ranges.
Topologically-Protected Quantum Nano-Nodes
A device includes a plurality of optoelectronic gates. Each gate includes a nanowire, and a topological insulator coating the nanowire. The topological insulator is configured to isolate entanglement action of a nanoparticle in the nanowire, and an ion is coupled to the nanoparticle in the nanowire when the ion is photoactive.
MULTIPLE SILICON ATOM QUANTUM DOT AND DEVICES INCLUSIVE THEREOF
A multiple-atom silicon quantum dot is provided that includes multiple dangling bonds on an otherwise H-terminated in silicon surface, each dangling bonds having one of three ionization states of +1, 0 or 1 and corresponding respectively to 0, 1, or 2 electrons in a dangling bond state. The dangling bonds together in close proximity and having the dangling bond states energetically in the silicon band gap with selective control of the ionization state of one of the dangling bonds. A new class of electronics elements is provided through the inclusion of at least one input and at least one output to the multiple dangling bonds. Selective modification or creation of a dangling bond is also detailed.
SYSTEMS AND METHODS FOR A QUANTUM-ANALOGUE COMPUTER
Disclosed are systems and methods for a quantum-analogue computing bit array consisting of a single qubit analogue, a serial two qubit analogue coupling, or parallel N qubit analogues. The quantum-analogue computing bit array comprises an elastic media having photo-elastic and photo-expansion effects, the adjustment of which allows a manipulation of one or more structural degrees of freedom within the elastic media and one or more temporal degrees of freedom within the elastic media. At least one analogue qubit is defined by one or more elastic waves within the elastic media. The quantum-analogue computing bit array further comprises a modulated light source oriented to illuminate the elastic media with a laser radiation to achieve a non-separable multi-phonon superposition of states within the elastic media.