A composition and method for reducing the coefficient of friction and required pulling force of a wire or cable are provided. A composition of aqueous emulsion is provided that is environmentally friendly, halogen free and solvent free. The composition is compatible with various types of insulating materials and may be applied after the wire or cable is cooled and also by spraying or submerging the wire or cable in a bath. The composition contains lubricating agents that provide lower coefficient of friction for wire or cable installation and continuous wire or cable surface lubrication thereafter.

A metal paste contains (A) 75% to 90% by weight of at least one metal that is present in the form of particles comprising a coating that contains, at least one organic compound, (B) 0% to 12% by weight of at least one metal precursor, (C) 6% to 20% by weight of a mixture of at least two organic solvents, and (D) 0% to 10% by weight of at least one sintering aid. 30% to 60% by weight of the solvent mixture (C) consists of at least one 1-hydroxyalkane with 16-20 C-atoms that is non-substituted except for a methyl substitution on the penultimate C-atom.

The present document provides details of a nanostructured material defined by an anodized alumina having a nanostructure with transverse pores that pass through and connect longitudinal pores grown on an aluminum substrate. This document also describes the process for producing said nanostructured material and the possible use thereof as a template or mould for obtaining nanostructures formed by nanowires, which are generated in the cavities or pores of the aforementioned nanostructure of the nanomaterial of the invention. Likewise, this document details the use of the nanostructured anodized alumina material as a mould for producing nanostructures.

A tempering process for tempering an aluminum alloy coil includes a first reel-to-reel process including an anneal to solutionize the aluminum alloy followed by a quench, a second reel-to-reel process comprising rolling reduction, and a hardening anneal performed on the aluminum alloy coil. Cladding may be performed during the second reel-to-reel process; or a subsequent reel-to-reel electroplating process may be performed including an alkaline soak clean, an alkaline microetch and seed electroplating, and aqueous electroplating of a contact metal onto the seed electroplating. Electrical interconnect components may be stamped from the tempered and clad or electroplated aluminum alloy coil. The electrical interconnect components may, for example, be connectors, lead frames, or bus bars.

An aluminum-based composite material includes an aluminum parent phase, and stick-shaped or needle-shaped dispersive matter of aluminum carbide dispersed in the aluminum parent phase. A method of manufacturing the aluminum-based composite material includes a step of mixing aluminum powder having a purity of 99% by mass or higher with a stick-shaped or needle-shaped carbon material, and pressing and molding a resulting mixture, so as to prepare a compacted powder body. The manufacturing method further includes a step of heating the compacted powder body at 600C to 660C to react the carbon material with aluminum in the aluminum powder, so as to disperse the stick-shaped or needle-shaped dispersive matter of aluminum carbide in the aluminum parent phase.

An aluminum alloy wire rod has a composition consisting of Mg: 0.10 to 1.00 mass %, Si: 0.10 to 1.00 mass %, Fe: 0.01 to 1.40 mass %, Ti: 0.000 to 0.100 mass %, B: 0.000 to 0.030 mass %, Cu: 0.00 to 1.00 mass %, Ag: 0.00 to 0.50 mass %, Au: 0.00 to 0.50 mass %, Mn: 0.00 to 1.00 mass %, Cr: 0.00 to 1.00 mass %, Zr: 0.00 to 0.50 mass %, Hf: 0.00 to 0.50 mass %, V: 0.00 to 0.50 mass %, Sc: 0.00 to 0.50 mass %, Co: 0.00 to 0.50 mass %, Ni: 0.00 to 0.50 mass %, and the balance: Al and incidental impurities. A dispersion density of compound particles having a size of 20-1000 nm is 1 particle/μm.sup.2 or higher. In a distribution of the compound particles in the aluminum alloy wire rod, a maximum dispersion density of the compound particles is less than or equal to five times a minimum dispersion density of the compound particles.

A metallization for a thin-film component includes at least one layer composed of an Mo-based alloy containing Al and Ti and usual impurities. A process for producing a metallization includes providing at least one sputtering target, depositing at least one layer of an Mo-based alloy containing Al and Ti and usual impurities, and structuring the metallization by using at least one photolithographic process and at least one subsequent etching step. A sputtering target is composed of an Mo-based alloy containing Al and Ti and usual impurities. A process for producing a sputtering target composed of an Mo-based alloy includes providing a powder mixture containing Mo and also Al and Ti and cold gas spraying (CGS) of the powder mixture onto a suitable support material.

A stranded conductor (2) including a specific number of a first type of wire (5) which, in cross-section of the stranded conductor, are arranged in a hexagonal pattern around a central wire in at least two layers. The wires arranged at the vertices of the hexagonal pattern are of a second type of wire having in principle a smaller diameter than the first type of wires. The interstitial spaces (10) between the first and the second wires are filled by a sealing agent (3).

An aluminum alloy wire rod includes Mg: 0.1-1.0 mass %, Si: 0.1-1.2 mass %, Fe: 0.10-1.40 mass %, Ti: 0-0.100 mass %, B: 0-0.030 mass %, Cu: 0-1.00 mass %, Ag: 0-0.50 mass %, Au: 0-0.50 mass %, Mn: 0-1.00 mass %, Cr: 0-1.00 mass %, Zr: 0-0.50 mass %, Hf: 0-0.50 mass %, V: 0-0.50 mass %, Sc: 0-0.50 mass %, Co: 0-0.50 mass %, Ni: 0-0.50 mass %, and the balance: Al and inevitable impurities. In a cross section parallel to a wire rod lengthwise direction and including a center line of the wire rod, no void having an area greater than 20 μm.sup.2 is present, or even in a case where at least one void having an area greater than 20 μm.sup.2 is present, a presence ratio of the at least one void per 1000 μm.sup.2 is on average in a range of less than or equal to one void/1000 μm.sup.2.

Articles including a nickel-free coating and methods for applying coatings are described herein.