Provided is a new 5 V-class spinel-type lithium-manganese-containing composite oxide capable of achieving both the expansion of a high potential capacity region and the suppression of gas generation. Proposed is the spinel-type lithium-manganese-containing composite oxide comprising Li, Mn, O and two or more other elements, and having an operating potential of 4.5 V or more at a metal Li reference potential, wherein a peak is present in a range of 14.0 to 16.5° at 2θ, in an X-ray diffraction pattern measured by a powder X-ray diffractometer (XRD) using CuKα1 ray.

An indium tin oxide film containing by weight about 90% In.sub.2O.sub.3 and about 10% SnO.sub.2 is prepared using a low-energy deposition sputter process on a substrate. The indium tin oxide film thus obtained has a carrier concentration on the order of 10.sup.20/cm.sup.3 and a carrier mobility greater than 30 cm.sup.2/Vs. The low carrier concentration results in an increased transmission in the near infra-red region, while the high carrier mobility results in good conductive properties.

A transparent conductive film includes a film base, and a polycrystalline layer of indium tin oxide formed on the film base. The polycrystalline layer has a gradient of a concentration of tin oxide in a thickness direction thereof. A maximum value of the concentration of tin oxide in the thickness direction of the polycrystalline layer is 6 wt % to 12 wt %. The polycrystalline layer has a thickness of 10 nm to 35 nm. An average value of maximum sizes of crystal grains composing the polycrystalline layer is 380 nm to 730 nm.

A transparent conductive film includes a film base, and a polycrystalline layer of indium tin oxide formed on the film base. The polycrystalline layer has a gradient of a concentration of tin oxide in a thickness direction thereof. A maximum value of the concentration of tin oxide in the thickness direction of the polycrystalline layer is 6 wt % to 12 wt %. The polycrystalline layer has a thickness of 10 nm to 35 nm. An average value of maximum sizes of crystal grains composing the polycrystalline layer is 380 nm to 730 nm.

A mixed conducting ceramic element comprises a plurality of tubes each having interior and exterior surfaces, a closed end and an open end. A tube support member receives the open ends of the tubes. The ceramic element has a general composition of A.sub.xA′.sub.x′A″.sub.x″B.sub.yB′.sub.y′B″.sub.y″O.sub.3-z, where A, A′ and A″ are selected from Group II elements or the Lanthanoids, and B, B′ and B″ are selected from the d-block transition metals, and wherein 0<x≦1, 0<x′≦1, 0<x″≦1, 0<y≦1, 0<y′≦1, 0<y″≦1, x+x′+x″≈1, y+y′+y″≈1, and z is selected so that the resultant composition is charge neutral. The ceramic element can be a composite consisting of two or more component materials, wherein one component is predominantly an electronic conductor and another is predominantly an ionic conductor. The ceramic element may also be a composite material containing at least one component material having a chemical composition of A.sub.xA′.sub.x′A″.sub.x″B.sub.yB′.sub.y′B″.sub.y″O.sub.3-z.

A mixed conducting ceramic element comprises a plurality of tubes each having interior and exterior surfaces, a closed end and an open end. A tube support member receives the open ends of the tubes. The ceramic element has a general composition of A.sub.xA′.sub.x′A″.sub.x″B.sub.yB′.sub.y′B″.sub.y″O.sub.3-z, where A, A′ and A″ are selected from Group II elements or the Lanthanoids, and B, B′ and B″ are selected from the d-block transition metals, and wherein 0<x≦1, 0<x′≦1, 0<x″≦1, 0<y≦1, 0<y′≦1, 0<y″≦1, x+x′+x″≈1, y+y′+y″≈1, and z is selected so that the resultant composition is charge neutral. The ceramic element can be a composite consisting of two or more component materials, wherein one component is predominantly an electronic conductor and another is predominantly an ionic conductor. The ceramic element may also be a composite material containing at least one component material having a chemical composition of A.sub.xA′.sub.x′A″.sub.x″B.sub.yB′.sub.y′B″.sub.y″O.sub.3-z.

Provided are a solid electrolyte composition including an inorganic solid electrolyte having a conductivity of ions of metals belonging to Group I or II of the periodic table, binder particles constituted of a polymer having a reactive group, a dispersion medium, and at least one component selected from a crosslinking agent or a crosslinking accelerator, an electrode sheet for a battery produced using the same, an all solid state secondary battery, and a method for manufacturing an electrode sheet for a battery and an all solid state secondary battery.

A lithium ion-conducting solid electrolyte containing at least one metallic element selected from the group made of Zn, Ca, Mg, and Cu within a range of 0.01% by mass to 3.0% by mass, and a solid-state lithium ion rechargeable battery containing this lithium ion-conducting solid electrolyte.

A sintered electroconductive oxide having a perovskite oxide type crystal structure represented by a compositional formula: M1.sub.aM2.sub.bMn.sub.cAl.sub.dCr.sub.eO.sub.f wherein M1 represents at least one element selected from group 3 elements; and M2 represents at least one element selected from among Mg, Ca, Sr and Ba, wherein element M1 predominantly includes at least one element selected from Nd, Pr and Sm, and a, b, c, d, e and f satisfy the following relationships: 0.6005≦a<1.000, 0<b≦0.400, 0≦c<0.150, 0.400≦d<0.950, 0.050<e≦0.600, 0.50<e/(c+e)≦1.00, and 2.80≦f≦3.30. Also disclosed is a thermistor element including a thermistor portion which is formed of the sintered electroconductive oxide as well as a temperature sensor employing the thermistor element.

A sintered electroconductive oxide having a perovskite oxide type crystal structure represented by a compositional formula: M1.sub.aM2.sub.bMn.sub.cAl.sub.dCr.sub.eO.sub.f wherein M1 represents at least one element selected from group 3 elements; and M2 represents at least one element selected from among Mg, Ca, Sr and Ba, wherein element M1 predominantly includes at least one element selected from Nd, Pr and Sm, and a, b, c, d, e and f satisfy the following relationships: 0.6005≦a<1.000, 0<b≦0.400, 0≦c<0.150, 0.400≦d<0.950, 0.050<e≦0.600, 0.50<e/(c+e)≦1.00, and 2.80≦f≦3.30. Also disclosed is a thermistor element including a thermistor portion which is formed of the sintered electroconductive oxide as well as a temperature sensor employing the thermistor element.