A composite transparent conducting film (TCF) on a substrate that includes a first region extending to a first depth of the TCF and having a higher density (lower porosity) than a second region of the TCF located at a different depth of the TCF. A method of forming the composite TCF includes applying a transparent conducting layer onto a substrate or onto a second layer previously formed on the substrate, and rapidly heating the transparent conducting layer resulting in a first region extending to a first depth of the transparent conducting layer that is at least partially melted and of a higher density (lower porosity) than a second region located at a different depth of the transparent conducting layer that is not melted, thereby forming a composite TCF that has a change of porosity in a thickness direction of the composite TCF.

A composite transparent conducting film (TCF) on a substrate that includes a first region extending to a first depth of the TCF and having a higher density (lower porosity) than a second region of the TCF located at a different depth of the TCF. A method of forming the composite TCF includes applying a transparent conducting layer onto a substrate or onto a second layer previously formed on the substrate, and rapidly heating the transparent conducting layer resulting in a first region extending to a first depth of the transparent conducting layer that is at least partially melted and of a higher density (lower porosity) than a second region located at a different depth of the transparent conducting layer that is not melted, thereby forming a composite TCF that has a change of porosity in a thickness direction of the composite TCF.

Provided is a method of manufacturing silicon oxide by which an amount of oxygen of the silicon oxide may be controlled. The method of manufacturing silicon oxide may include mixing silicon and silicon dioxide to be included in a reaction chamber, depressurizing a pressure of the reaction chamber to obtain a high degree of vacuum while increasing a temperature in the reaction chamber to a reaction temperature, and reacting the mixture of silicon and silicon dioxide in a reducing atmosphere.

Provided is a method of manufacturing silicon oxide by which an amount of oxygen of the silicon oxide may be controlled. The method of manufacturing silicon oxide may include mixing silicon and silicon dioxide to be included in a reaction chamber, depressurizing a pressure of the reaction chamber to obtain a high degree of vacuum while increasing a temperature in the reaction chamber to a reaction temperature, and reacting the mixture of silicon and silicon dioxide in a reducing atmosphere.

An exemplary embodiment of the present invention relates to a conductive structure body that comprises a darkening pattern layer having AlOxNy, and a method for manufacturing the same. The conductive structure body according to the exemplary embodiment of the present invention may prevent reflection by a conductive pattern layer without affecting conductivity of the conductive pattern layer, and improve a concealing property of the conductive pattern layer by improving absorbance. Accordingly, a display panel having improved visibility may be developed by using the conductive structure body according to the exemplary embodiment of the present invention.

An all-solid-state secondary battery includes: a positive electrode active substance layer; a negative electrode active substance layer; and a solid electrolyte layer, in which at least one layer of the positive electrode active substance layer, the negative electrode active substance layer, or the solid electrolyte layer contains a nitrogen-containing polymer having a repeating unit having at least one of a substituent X, a substituent Y, or a substituent Z and an inorganic solid electrolyte having conductivity of ions of metal belonging to Group 1 or 2 in the periodic table.

A lithium ion-conducting oxide including at least lithium, tantalum, M1, phosphorus, and oxygen as constituent elements. M1 is at least one metal element selected from elements of the Group 4, the Group 5, the Group 6, the Group 13, and the Group 14 (provided that tantalum is excluded), a ratio of number of atoms of each constituent element of lithium, tantalum, M1, phosphorus, and oxygen is 1:2−x:x:1:8, wherein x is more than 0 and less than 1, and the lithium ion-conducting oxide contains a monoclinic crystal. Also disclosed is a lithium-ion secondary battery including the lithium ion-conducting oxide.

To provide a dense beta-alumina-based sintered compact having a high ionic conductivity as a solid electrolyte by firing at a low temperature to suppress the volatilization of Na.sub.2O and its production method. By adding RNbO.sub.3 which is a material having a low melting point to a beta-alumina powder, followed by firing, it is possible to obtain a beta-alumina-based sintered compact having a low firing temperature and containing, as the main component, dense β″ alumina crystals which are free from anomalous grain growth during the firing process.

To provide a dense beta-alumina-based sintered compact having a high ionic conductivity as a solid electrolyte by firing at a low temperature to suppress the volatilization of Na.sub.2O and its production method. By adding RNbO.sub.3 which is a material having a low melting point to a beta-alumina powder, followed by firing, it is possible to obtain a beta-alumina-based sintered compact having a low firing temperature and containing, as the main component, dense β″ alumina crystals which are free from anomalous grain growth during the firing process.

The electrolyte membrane of the present disclosure includes a plurality of crystal domains. At least one of the crystal domains includes a first crystal subdomain and a second crystal subdomain. Each of the first crystal subdomain and the second crystal subdomain includes Ba, Zr, M, and O. M is a trivalent element. The concentration of M in the first crystal subdomain is different from the concentration of M in the second crystal subdomain.