A method for producing a liquid transport apparatus is disclosed. The liquid transport apparatus includes a pressure chamber plate, a ceramics layer formed on a surface of the pressure chamber plate, a piezoelectric layer formed on the ceramics layer, and an electrode formed on the piezoelectric layer. The ceramics layer is formed by heating an insulating ceramic material at a temperature lower than an annealing temperature of the piezoelectric layer. Accordingly, the atoms of the pressure chamber plate are suppressed from being diffused into the piezoelectric layer.

Described is a cable comprising a plurality of high temperature superconductor (HTS) components, a plurality of electrically conductive segments extending along a length of the cable, each of the plurality of electrically conductive segments comprising one of the plurality of HTS components, and an electrically insulating material arranged between adjacent ones of the plurality of electrically conductive segments.

Described is a cable comprising a plurality of high temperature superconductor (HTS) components, a plurality of electrically conductive segments extending along a length of the cable, each of the plurality of electrically conductive segments comprising one of the plurality of HTS components, and an electrically insulating material arranged between adjacent ones of the plurality of electrically conductive segments.

A compound of the general formula: (i) wherein x has a value greater than 0.06 and equal to or less than 0.4. The compound is also formulated into a positive electrode for use in an electrochemical cell.

A compound of the general formula: (i) wherein x has a value greater than 0.06 and equal to or less than 0.4. The compound is also formulated into a positive electrode for use in an electrochemical cell.

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.

A REBCO superconductor tape that can achieve a lift factor greater than or equal to approximately 3.0 or 4.0 in an approximately 3 T magnetic field applied perpendicular to a REBCO tape at approximately 30 K. In an embodiment, the REBCO superconductor tape can include a critical current density less than or equal to approximately 4.2 MA/cm.sup.2 at 77 K in the absence of an external magnetic field. In another embodiment, the REBCO superconductor tape can include a critical current density greater than or equal to approximately 12 MA/cm.sup.2 at approximately 30 K in a magnetic field of approximately 3 T having an orientation parallel to a c-axis.

A REBCO superconductor tape that can achieve a lift factor greater than or equal to approximately 3.0 or 4.0 in an approximately 3 T magnetic field applied perpendicular to a REBCO tape at approximately 30 K. In an embodiment, the REBCO superconductor tape can include a critical current density less than or equal to approximately 4.2 MA/cm.sup.2 at 77 K in the absence of an external magnetic field. In another embodiment, the REBCO superconductor tape can include a critical current density greater than or equal to approximately 12 MA/cm.sup.2 at approximately 30 K in a magnetic field of approximately 3 T having an orientation parallel to a c-axis.

Provided are a sodium ion-conductive crystal-containing solid electrolyte sheet capable of giving excellent battery characteristics even when reduced in thickness, and an all-solid-state battery using the same. The solid electrolyte sheet contains at least one type of sodium ion-conductive crystal selected from β″-alumina and NASICON crystal and has a thickness of 500 μm or less and a flatness of 200 μm or less.