An ink composition for photonic sintering and a method or producing the ink composition, the ink composition includes: metal nanoparticles comprising a first metal satisfying interaction formula 1; an organic non-aqueous binder; and a non-aqueous solvent. Interaction formula 1 is A1/A20.2, where A1/A2 is a ratio, in the x-ray photoelectron spectrum on the surface of the first metal, in which first metal 2p3/2 peak area of the oxide of the first metal (A1) is divided by first metal 2p3/2 peak area of the first metal (A2).

An ink composition for photonic sintering and a method or producing the ink composition, the ink composition includes: metal nanoparticles comprising a first metal satisfying interaction formula 1; an organic non-aqueous binder; and a non-aqueous solvent. Interaction formula 1 is A1/A20.2, where A1/A2 is a ratio, in the x-ray photoelectron spectrum on the surface of the first metal, in which first metal 2p3/2 peak area of the oxide of the first metal (A1) is divided by first metal 2p3/2 peak area of the first metal (A2).

A particle composition includes metal fine particles composed of a metal element having a bulk melting point of greater than 420 C. with a primary particle diameter of primary particles of the metal fine particles being 1 nm to 500 nm, a part of or an entire surface of the metal fine particles being coated with a coating material; a low melting point metal powder composed of a metal or alloy having a bulk melting point of 420 C. or less; and an activating agent that decomposes and removes the coating material from the surface of the metal fine particles after the low melting point metal powder is melted, wherein a content of the metal fine particles containing the coating material is 0.5 mass % to 50 mass %, and a ratio ([inorganic compound/metal fine particles]100 (mass %)) of the inorganic compound in the metal fine particles is 0.1 mass % to 50 mass %.

A particle composition includes metal fine particles composed of a metal element having a bulk melting point of greater than 420 C. with a primary particle diameter of primary particles of the metal fine particles being 1 nm to 500 nm, a part of or an entire surface of the metal fine particles being coated with a coating material; a low melting point metal powder composed of a metal or alloy having a bulk melting point of 420 C. or less; and an activating agent that decomposes and removes the coating material from the surface of the metal fine particles after the low melting point metal powder is melted, wherein a content of the metal fine particles containing the coating material is 0.5 mass % to 50 mass %, and a ratio ([inorganic compound/metal fine particles]100 (mass %)) of the inorganic compound in the metal fine particles is 0.1 mass % to 50 mass %.

A front-side conductive paste for a crystalline silicon solar cell is provided. The front-side conductive paste for a crystalline silicon solar cell includes, in parts by weight, 80.0-93.0 parts of a metal powder, 6.0-15.0 parts of an organic carrier, and 1.0-5.0 parts of an oxide etching agent, where based on 100% by mole of the oxide etching agent, the oxide etching agent includes 15-30% of PbO; 25-40% of TeO.sub.2; 8.0-15.0% of Li.sub.2O; 9.0-20.0% of SiO.sub.2; 5.0-15.0% of Bi.sub.2O.sub.3; 0.5-10.0% of ZnO; and either one or both of 0.1-10.0% of MgO and 0.1-10.0% of CaO; and no more than 5.0% of an oxide of additional metal elements. The metal powder forms good ohmic contact with crystalline silicon substrate during the sintering process of the front-side conductive paste applied overlying an insulation film on the substrate. Finally, a front-side electrode of low contact resistance, good electrical conductivity, and strong adhesion is obtained.

In an exemplary embodiment of the present invention: A series of U-shaped nickel-iron components are plated onto a rough or roughened semiconductor package or printed circuit board material. The horizontal base of the U-shaped component has a surface roughness of the semiconductor package material. The vertical surfaces of the U-shape have a surface roughness derived from the dry film. The large smooth vertical surface allows the U-shaped nickel-iron components to have a low average roughness. The lowered average roughness reduces the path length the U-shaped nickel-iron components provide for magnetic flux while the roughness of the horizontal portion of the U-shape allows for increased mechanical bonding to occur.

In an exemplary embodiment of the present invention: A series of U-shaped nickel-iron components are plated onto a rough or roughened semiconductor package or printed circuit board material. The horizontal base of the U-shaped component has a surface roughness of the semiconductor package material. The vertical surfaces of the U-shape have a surface roughness derived from the dry film. The large smooth vertical surface allows the U-shaped nickel-iron components to have a low average roughness. The lowered average roughness reduces the path length the U-shaped nickel-iron components provide for magnetic flux while the roughness of the horizontal portion of the U-shape allows for increased mechanical bonding to occur.

A method of fabricating a composite conductive film is provided. The method includes providing, as a matrix, a layer of cross-linkable polymer while the cross-linkable polymer is in a substantially noncross-linked state. The method further includes introducing a plurality of inorganic nanowires onto a surface of the layer of cross-linkable polymer and embedding at least some of the plurality of inorganic nanowires into the layer of cross-linkable polymer to form an inorganic mesh within the layer of cross-linkable polymer, thereby forming the composite conductive film. The method further includes cross-linking the cross-linkable polymer within at least a surface portion of the composite conductive film, wherein following the cross-linking, the cross-linkable polymer within at least the surface portion of the composite conductive film is in a cross-linked state.

A method of fabricating a composite conductive film is provided. The method includes providing, as a matrix, a layer of cross-linkable polymer while the cross-linkable polymer is in a substantially noncross-linked state. The method further includes introducing a plurality of inorganic nanowires onto a surface of the layer of cross-linkable polymer and embedding at least some of the plurality of inorganic nanowires into the layer of cross-linkable polymer to form an inorganic mesh within the layer of cross-linkable polymer, thereby forming the composite conductive film. The method further includes cross-linking the cross-linkable polymer within at least a surface portion of the composite conductive film, wherein following the cross-linking, the cross-linkable polymer within at least the surface portion of the composite conductive film is in a cross-linked state.

Provided is a conductive paste for forming a solar cell electrode containing a glass frit component (A) as glass frit (II), the glass frit component (A) containing the following in the content ratio to the total molar number in terms of oxide: (a) 30 to 70 mol % of tellurium element, (b) 18 to 30 mol % of tungsten element, (c) 5 to 30 mol % of zinc element, (d) 1 to 15 mol % of boron element, (e) 0.3 to 5 mol % of aluminum element, (f) 0.3 to 7 mol % of one or more selected from rare earth elements in terms of oxide, and (g) 0.1 to 7 mol % of one or more selected from the group consisting of tin, lithium, and barium elements in terms of oxide.

The conductive paste may have better electric characteristics and a small variation in the characteristics even at a relatively low firing temperature (for example, 760 C.).