An electrical steel sheet is provided with insulating coating. The insulating coating contains Si and Fe. The coating weight of Si in the insulating coating in terms of SiO.sub.2 is 50% to 99% of the total coating weight. The ratio (Fe/Si) of the content of Fe to the content of Si in the insulating coating is 0.01 to 0.6 on a molar basis. The ratio (C (the organic resin+the lubricant)/(Fe.sub.2O.sub.3+SiO.sub.2)) of the coating weight of the organic resin and/or the lubricant in terms of C to the sum of the coating weight of Fe in terms of Fe.sub.2O.sub.3 and the coating weight of Si in terms of SiO.sub.2 preferably is 0.05 to 0.8.

The present invention provides an insulated wire having a heat-resistant insulating layer, wherein heat-resistant particles are contained in the insulating layer, and the heat-resistant particles are densely dispersed in a surface region of the insulating layer. For example, the concentration of heat-resistant particles included in a layer thick portion of 0.5 m from the surface of the insulating layer is two times the concentration of heat-resistant particles included in a central portion of the insulating layer. An electrodeposition liquid used to form the insulating layer is formed by dispersing the heat-resistant particles in a suspension in which resin particles are dispersed, the viscosity is 100 cP or less, and the turbidity is 1 mg/L or more.

The present invention provides an insulated wire having a heat-resistant insulating layer, wherein heat-resistant particles are contained in the insulating layer, and the heat-resistant particles are densely dispersed in a surface region of the insulating layer. For example, the concentration of heat-resistant particles included in a layer thick portion of 0.5 m from the surface of the insulating layer is two times the concentration of heat-resistant particles included in a central portion of the insulating layer. An electrodeposition liquid used to form the insulating layer is formed by dispersing the heat-resistant particles in a suspension in which resin particles are dispersed, the viscosity is 100 cP or less, and the turbidity is 1 mg/L or more.

A dielectric composition with high voltage resistance and favorable reliability, and an electronic component using the dielectric composition. The dielectric composition contains, as a main component, a tungsten bronze type composite oxide represented by a chemical formula (Sr.sub.1.00-(s+t)Ba.sub.sCa.sub.t).sub.6.00-xR.sub.x(Ti.sub.1.00-aZr.sub.a).sub.x+2.00(Nb.sub.1.00-bTa.sub.b).sub.8.00-xO.sub.30.00, in which the R is at least one element selected from Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and s, t, x, a, and b satisfy 0.50s1.00, 0t0.30, 0.50s+t1.00, 1.50<x3.00, 0.20a1.00, and 0b1.00. At least one selected from Mn, Mg, Co, V, W, Mo, Si, Li, B, and Al is contained as a sub component in 0.10 mol or more and 20.00 mol or less with respect to 100 mol of the main component.

Proposed is a method for producing an insulating composite material for a silicone rubber socket, in which the method includes a step of producing a molded body of a mixture of liquid silicone and a heterogeneous composite powder composited from (i) metal powder and (ii) polymer or ceramic powder. An insulating composite material for a silicone rubber socket, produced by the method, is also proposed. Further proposed is a silicone rubber socket manufacturing method including the steps of producing a sheet-shaped molded body from a mixture including liquid silicone and a heterogeneous composite powder composited from (i) a metal powder and (ii) a polymer or ceramic powder and (b) forming a plurality of pores extending through the sheet-shaped molded body in a thickness direction and filling the pores with a conductive material. In addition, a silicone rubber socket manufactured by the method is also proposed.

Proposed is a method for producing an insulating composite material for a silicone rubber socket, in which the method includes a step of producing a molded body of a mixture of liquid silicone and a heterogeneous composite powder composited from (i) metal powder and (ii) polymer or ceramic powder. An insulating composite material for a silicone rubber socket, produced by the method, is also proposed. Further proposed is a silicone rubber socket manufacturing method including the steps of producing a sheet-shaped molded body from a mixture including liquid silicone and a heterogeneous composite powder composited from (i) a metal powder and (ii) a polymer or ceramic powder and (b) forming a plurality of pores extending through the sheet-shaped molded body in a thickness direction and filling the pores with a conductive material. In addition, a silicone rubber socket manufactured by the method is also proposed.

An ultra high temperature mineral-insulated shielded cabled is provided as a non-sintered compacted powder, where central conductors and/or a sheath are made of a conducting material selected from tantalum, tungsten, rhodium, rhenium, carbon, and a mixture of at least two of such materials. The mineral insulator is made of an insulating material selected from boron nitride, yttrium oxide, silicon nitride, aluminium nitride, and a mixture of such materials. The conductor is tantalum and the insulator is selected from hafnia, boron nitride, silicon nitride, and a mixture of such materials, in particular for a use at a temperature lower than 1 630? C. or 1 600? C.; or aluminium nitride, in particular at a temperature lower than 1 530? C. or 1 500? C. A device including this cable used below 1800? C., particularly under 1 600? C., in particular under vacuum, as a heating element or transmission cable.

Artificial synaptic devices with an HfO.sub.2-based ferroelectric layer that can be implemented in the CMOS back-end are provided. In one aspect, an artificial synapse element is provided. The artificial synapse element includes: a bottom electrode; a ferroelectric layer disposed on the bottom electrode, wherein the ferroelectric layer includes an HfO.sub.2-based material that crystallizes in a ferroelectric phase at a temperature of less than or equal to about 400 C.; and a top electrode disposed on the bottom electrode. An artificial synaptic device including the present artificial synapse element and methods for formation thereof are also provided.

Artificial synaptic devices with an HfO.sub.2-based ferroelectric layer that can be implemented in the CMOS back-end are provided. In one aspect, an artificial synapse element is provided. The artificial synapse element includes: a bottom electrode; a ferroelectric layer disposed on the bottom electrode, wherein the ferroelectric layer includes an HfO.sub.2-based material that crystallizes in a ferroelectric phase at a temperature of less than or equal to about 400 C.; and a top electrode disposed on the bottom electrode. An artificial synaptic device including the present artificial synapse element and methods for formation thereof are also provided.

A method of manufacturing an insulator for a spark plug comprises the steps of combining at least two raw materials to form a powdered insulator formulation, spray drying the powdered insulator formulation, and pressing the powdered insulator formulation to create an insulator blank. The method further includes the steps of bisque firing the insulator blank, grinding the bisque fired insulator blank to form the insulator, and sintering the insulator.