Artificial synaptic devices with an HfO.sub.2-based ferroelectric layer that can be implemented in the CMOS back-end are provided. In one aspect, an artificial synapse element is provided. The artificial synapse element includes: a bottom electrode; a ferroelectric layer disposed on the bottom electrode, wherein the ferroelectric layer includes an HfO.sub.2-based material that crystallizes in a ferroelectric phase at a temperature of less than or equal to about 400 C.; and a top electrode disposed on the bottom electrode. An artificial synaptic device including the present artificial synapse element and methods for formation thereof are also provided.

A dielectric composition with high voltage resistance and favorable reliability, and an electronic component using the dielectric composition. A dielectric composition contains, as a main component, a tungsten bronze type composite oxide represented by a chemical formula (Sr.sub.1.00stBa.sub.sCa.sub.t).sub.6.00xR.sub.x(Ti.sub.1.00aZr.sub.a).sub.x+2.00(Nb.sub.1.00bTa.sub.b).sub.8.00xO.sub.30.00, in which the R is at least one element selected from Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and s, t, x, a, and b satisfy 0.70s1.00, 0t0.30, 0.70s+t1.00, 0x0.50, 0.10a1.00, and 0b1.00. At least one or more elements selected from Mn, Mg, Co, V, W, Mo, Si, Li, B, and Al arc contained as a sub component in 0.10 mol or more and 20.00 mol or less with respect to 100 mol of the main component.

A dielectric composition with high voltage resistance and favorable reliability, and an electronic component using the composition, the composition containing a tungsten bronze type composite oxide represented by chemical formula (Sr.sub.1.00-(s+t)Ba.sub.sCa.sub.t).sub.6.00-xR.sub.x(Ti.sub.1.00-(a+d)Zr.sub.aSi.sub.d).sub.x2.00(Nb.sub.1.00-bTa.sub.b).sub.8.00-xO.sub.30.00, wherein R is at least one element selected from Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and s, t, x, a, b, and d satisfy 0s1.00, 0t1.00, 0s+t1.00, 0x3.00, 0.01a0.98, 0b1.00, 0.02d0.15, and 0.03a+d1.00. At least one element selected from Mn, Mg, Co, V, W, Mo, Li, B, and Al are contained as a sub component in 0.10 mol or more and 20.00 mol or less with respect to 100 mol of the main component.

A dielectric composition with high voltage resistance and favorable reliability, and an electronic component using the dielectric composition. The dielectric composition contains, as a main component, a tungsten bronze type composite oxide represented by a chemical formula (Sr.sub.1.00stBa.sub.sCa.sub.t).sub.6.00xR.sub.x(Ti.sub.1.00aZr.sub.a).sub.x+2.00(Nb.sub.1.00bTa.sub.b).sub.8.00xO.sub.30.00 in which the R is at least one element selected from Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and s, t, x, a, and b satisfy 0.50s1.00, 0t0.50, 0.50s+t1.00, 0.50<x1.50, 0.30a1.00, and 0b1.00. At least one or more elements selected from Mn, Mg, Co, V, W, Mo, Si, Li, B, and Al are contained as a sub component in 0.10 mol or more and 20.00 mol or less with respect to 100 mol of the main component.

A non-halogen flame-retardant insulated electric wire includes a conductor and a crosslinked single-layer or a multilayer insulating layer on an outer periphery of the conductor. The insulating layer has a tensile elastic modulus of 500 MPa or more and an elongation at break of 120% or less in a tensile test performed at a displacement rate of 200 mm/min, and has a storage elastic modulus at 125 C. of 310.sup.6 Pa or more in a dynamic viscoelasticity test.

A non-halogen flame-retardant insulated electric wire includes a conductor and a crosslinked single-layer or a multilayer insulating layer on an outer periphery of the conductor. The insulating layer has a tensile elastic modulus of 500 MPa or more and an elongation at break of 120% or less in a tensile test performed at a displacement rate of 200 mm/min, and has a storage elastic modulus at 125 C. of 310.sup.6 Pa or more in a dynamic viscoelasticity test.

An ion probe includes a metal wire, a metal sheath covering the metal wire, insulation powder provided between the metal wire and the metal sheath, and a ceramic capillary. A portion of the metal wire projecting from a distal end of the metal sheath is passed through the ceramic capillary. The ceramic capillary is bonded to the distal end of the metal sheath by an organic adhesive layer. A part of the insulation powder located at the distal end of the metal sheath is covered with the organic adhesive layer.

An impregnable electrical insulating paper for an electrical insulating body having first platelet-shaped particles which have layer silicates, and second platelet-shaped particles which have a heat conductivity at 20 C. of at least 1 W/mK. A method for producing an impregnable electrical insulating paper, an electrical insulating tape, an electrical insulating body, and the use of the electrical insulating body having first platelet-shaped particles which have layer silicates, and second platelet-shaped particles.

An impregnable electrical insulating paper for an electrical insulating body having first platelet-shaped particles which have layer silicates, and second platelet-shaped particles which have a heat conductivity at 20 C. of at least 1 W/mK. A method for producing an impregnable electrical insulating paper, an electrical insulating tape, an electrical insulating body, and the use of the electrical insulating body having first platelet-shaped particles which have layer silicates, and second platelet-shaped particles.

A polycrystalline dielectric thin film and capacitor element has a small dielectric loss tan . The polycrystalline dielectric thin film, in which the main composition is a perovskite oxynitride. The perovskite oxynitride is expressed by the compositional formula AaBbOoNn (a+b+o+n=5), where a/b>1 and n0.7.