A thin-film structure and a semiconductor device including the same are provided. The thin-film structure includes: a base layer; and a dielectric layer on the base layer, the dielectric layer including crystals including a <11x> (0≤x≤1) crystal orientation in an out-of-plane direction of the base layer and having an orthorhombic crystal structure of an oIV phase (space group: Pmn21).

A thin-film structure and a semiconductor device including the same are provided. The thin-film structure includes: a base layer; and a dielectric layer on the base layer, the dielectric layer including crystals including a <11x> (0≤x≤1) crystal orientation in an out-of-plane direction of the base layer and having an orthorhombic crystal structure of an oIV phase (space group: Pmn21).

Aspects relate to patterned nanostructures having a feature size not including film thickness of below 5 microns. The patterned nanostructures are made up of nanoparticles having an average particle size of less than 100 nm. A nanoparticle composition, which, in some cases, includes a binder, is applied to a substrate. A patterned mold used in concert with electromagnetic radiation function to manipulate the nanoparticle composition in forming the patterned nanostructure. In some embodiments, the patterned mold nanoimprints a pattern onto the nanoparticle composition and the composition is cured through UV or thermal energy. Three-dimensional patterned nanostructures may be formed. A number of patterned nanostructure layers may be prepared and joined together. In some cases, a patterned nanostructure may be formed as a layer that is releasable from the substrate upon which it is initially formed. Such releasable layers may be arranged to form a three-dimensional patterned nanostructure for suitable applications.

Aspects relate to patterned nanostructures having a feature size not including film thickness of below 5 microns. The patterned nanostructures are made up of nanoparticles having an average particle size of less than 100 nm. A nanoparticle composition, which, in some cases, includes a binder, is applied to a substrate. A patterned mold used in concert with electromagnetic radiation function to manipulate the nanoparticle composition in forming the patterned nanostructure. In some embodiments, the patterned mold nanoimprints a pattern onto the nanoparticle composition and the composition is cured through UV or thermal energy. Three-dimensional patterned nanostructures may be formed. A number of patterned nanostructure layers may be prepared and joined together. In some cases, a patterned nanostructure may be formed as a layer that is releasable from the substrate upon which it is initially formed. Such releasable layers may be arranged to form a three-dimensional patterned nanostructure for suitable applications.

Aspects relate to patterned nanostructures having a feature size not including film thickness of below 5 microns. The patterned nanostructures are made up of nanoparticles having an average particle size of less than 100 nm. A nanoparticle composition, which, in some cases, includes a binder, is applied to a substrate. A patterned mold used in concert with electromagnetic radiation function to manipulate the nanoparticle composition in forming the patterned nanostructure. In some embodiments, the patterned mold nanoimprints a pattern onto the nanoparticle composition and the composition is cured through UV or thermal energy. Three-dimensional patterned nanostructures may be formed. A number of patterned nanostructure layers may be prepared and joined together. In some cases, a patterned nanostructure may be formed as a layer that is releasable from the substrate upon which it is initially formed. Such releasable layers may be arranged to form a three-dimensional patterned nanostructure for suitable applications.

Aspects relate to patterned nanostructures having a feature size not including film thickness of below 5 microns. The patterned nanostructures are made up of nanoparticles having an average particle size of less than 100 nm. A nanoparticle composition, which, in some cases, includes a binder, is applied to a substrate. A patterned mold used in concert with electromagnetic radiation function to manipulate the nanoparticle composition in forming the patterned nanostructure. In some embodiments, the patterned mold nanoimprints a pattern onto the nanoparticle composition and the composition is cured through UV or thermal energy. Three-dimensional patterned nanostructures may be formed. A number of patterned nanostructure layers may be prepared and joined together. In some cases, a patterned nanostructure may be formed as a layer that is releasable from the substrate upon which it is initially formed. Such releasable layers may be arranged to form a three-dimensional patterned nanostructure for suitable applications.

A dielectric composition includes main phases having a tungsten bronze structure and grain boundaries existing between the main phases. At least one or more rare earth elements selected from La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, and Dy is RE. A concentration ratio of RE in central portions of the main phases to RE in peripheral portions of the main phases is 0.2 or less.

A dielectric composition includes main phases having a tungsten bronze structure and grain boundaries existing between the main phases. At least one or more rare earth elements selected from La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, and Dy is RE. A concentration ratio of RE in central portions of the main phases to RE in peripheral portions of the main phases is 0.2 or less.

A dielectric high gradient insulator device comprises a stack of at least two dielectric layers which are in physical contact with each other and which have different dielectric constants. At least two dielectric layers are configured to form a shaped electric field, when the device is placed between electrodes having a voltage difference. The shaped electric field is in a region proximal to a surface of the at least two dielectric layers, and causes deflection of negatively charged particles away from the surface, thereby inhibiting voltage breakdown of the device. A method of manufacturing the device is also presented.

A dielectric high gradient insulator device comprises a stack of at least two dielectric layers which are in physical contact with each other and which have different dielectric constants. At least two dielectric layers are configured to form a shaped electric field, when the device is placed between electrodes having a voltage difference. The shaped electric field is in a region proximal to a surface of the at least two dielectric layers, and causes deflection of negatively charged particles away from the surface, thereby inhibiting voltage breakdown of the device. A method of manufacturing the device is also presented.