Provided are a dielectric material including a composite represented by Formula 1, a device including the same, and a method of preparing the dielectric material:
xAB.sub.3.(1−x)(Bi.sub.aNa.sub.b)TiO.sub.3  [Formula 1] wherein, in Formula 1, A is at least one element selected from among lanthanum group elements, rare earth metal elements, and alkaline earth metal elements, B is at least one element selected from transition metal elements, 0.1<x<0.5, 0<a<1, 0<b<1, and a+b=1.

A glass powder of the present invention is a glass powder, which is formed of alkali borosilicate glass, wherein the glass powder includes 0.1 mol % to 1.0 mol %, provided that 1.0 mol % is excluded, of Li.sub.2O+Na.sub.2O+K.sub.2O in a glass composition, has a molar ratio Li.sub.2O/(Li.sub.2O+Na.sub.2O+K.sub.2O) of from 0.35 to 0.65, a molar ratio Na.sub.2O/(Li.sub.2O+Na.sub.2O+K.sub.2O) of from 0.25 to 0.55, and a molar ratio K.sub.2O/(Li.sub.2O+Na.sub.2O+K.sub.2O) of from 0.025 to 0.20, and has a specific dielectric constant at 25° C. and 16 GHz of from 3.5 to 4.0 and a dielectric dissipation factor at 25° C. and 16 GHz of 0.0020 or less.

A glass powder of the present invention is a glass powder, which is formed of alkali borosilicate glass, wherein the glass powder includes 0.1 mol % to 1.0 mol %, provided that 1.0 mol % is excluded, of Li.sub.2O+Na.sub.2O+K.sub.2O in a glass composition, has a molar ratio Li.sub.2O/(Li.sub.2O+Na.sub.2O+K.sub.2O) of from 0.35 to 0.65, a molar ratio Na.sub.2O/(Li.sub.2O+Na.sub.2O+K.sub.2O) of from 0.25 to 0.55, and a molar ratio K.sub.2O/(Li.sub.2O+Na.sub.2O+K.sub.2O) of from 0.025 to 0.20, and has a specific dielectric constant at 25° C. and 16 GHz of from 3.5 to 4.0 and a dielectric dissipation factor at 25° C. and 16 GHz of 0.0020 or less.

A dielectric film may be exposed to an acid solution such as hydrochloric acid, nitric acid, or sulfuric acid during a wet process after film formation. The inventors have newly found that when a dielectric film includes Zr having a lower ionization tendency than Ti in a main component of a metal oxide expressed by a general formula (Ba, Ca)(Ti, Zr)O.sub.3 is provided and satisfies at least one between relationships such that degree of orientation of (100) plane is higher than degree of orientation of (110) plane, and degree of orientation of (111) plane is higher than degree of orientation of (110) plane in a film thickness direction, the dielectric film is less likely to be damaged during a wet process, and the resistance to a wet process is improved.

A dielectric film may be exposed to an acid solution such as hydrochloric acid, nitric acid, or sulfuric acid during a wet process after film formation. The inventors have newly found that when a dielectric film includes Zr having a lower ionization tendency than Ti in a main component of a metal oxide expressed by a general formula (Ba, Ca)(Ti, Zr)O.sub.3 is provided and satisfies at least one between relationships such that degree of orientation of (100) plane is higher than degree of orientation of (110) plane, and degree of orientation of (111) plane is higher than degree of orientation of (110) plane in a film thickness direction, the dielectric film is less likely to be damaged during a wet process, and the resistance to a wet process is improved.

A composite material with enhanced electrical conductivity. The composite material includes two distinct phases. The first distinct phase is an excluded volume phase that includes an electrical insulator. The second distinct phase, a conductor phase, is a composite including an electrically insulating matrix and an embedded conductor phase that has sufficient concentration to exceed a percolation threshold within the conductor phase.

A composite material with enhanced electrical conductivity. The composite material includes two distinct phases. The first distinct phase is an excluded volume phase that includes an electrical insulator. The second distinct phase, a conductor phase, is a composite including an electrically insulating matrix and an embedded conductor phase that has sufficient concentration to exceed a percolation threshold within the conductor phase.

A dielectric high gradient insulator device comprises a stack of at least two dielectric layers which are in physical contact with each other and which have different dielectric constants. At least two dielectric layers are configured to form a shaped electric field, when the device is placed between electrodes having a voltage difference. The shaped electric field is in a region proximal to a surface of the at least two dielectric layers, and causes deflection of negatively charged particles away from the surface, thereby inhibiting voltage breakdown of the device. A method of manufacturing the device is also presented.

A dielectric high gradient insulator device comprises a stack of at least two dielectric layers which are in physical contact with each other and which have different dielectric constants. At least two dielectric layers are configured to form a shaped electric field, when the device is placed between electrodes having a voltage difference. The shaped electric field is in a region proximal to a surface of the at least two dielectric layers, and causes deflection of negatively charged particles away from the surface, thereby inhibiting voltage breakdown of the device. A method of manufacturing the device is also presented.

Disclosed are embodiments of tungsten bronze crystal structures that can have both a high dielectric constant and low temperature coefficient. Embodiments of the material can be useful for radiofrequency applications such as resonators and antennas.