Patent classifications
H01B3/12
ELECTRICAL FEEDTHROUGH
An electrical feedthrough is providing that includes a base body, an insulating material, an electrical conductor, a creepage distance extension, and a sealing member. The base body has a through opening extending therethrough. The insulating material is in the through opening. The electrical conductor extends through the insulating material such that a portion of the electrical conductor protrudes from the insulating material. The creepage distance extension surrounds at least a section of the portion. The sealing member is between the insulating material and the creepage distance extension. The sealing member is a seal material that is at least partially mineral and crystalline.
DIELECTRIC MATERIAL, METHOD OF PREPARING THE SAME, AND DEVICE COMPRISING THE DIELECTRIC MATERIAL
Provided are a dielectric material including a composite represented by Formula 1, a device including the same, and a method of preparing the dielectric material:
xAB.sub.3.(1−x)(Bi.sub.aNa.sub.b)TiO.sub.3 [Formula 1] wherein, in Formula 1, A is at least one element selected from among lanthanum group elements, rare earth metal elements, and alkaline earth metal elements, B is at least one element selected from transition metal elements, 0.1<x<0.5, 0<a<1, 0<b<1, and a+b=1.
DIELECTRIC MATERIAL, METHOD OF PREPARING THE SAME, AND DEVICE COMPRISING THE DIELECTRIC MATERIAL
Provided are a dielectric material including a composite represented by Formula 1, a device including the same, and a method of preparing the dielectric material:
xAB.sub.3.(1−x)(Bi.sub.aNa.sub.b)TiO.sub.3 [Formula 1] wherein, in Formula 1, A is at least one element selected from among lanthanum group elements, rare earth metal elements, and alkaline earth metal elements, B is at least one element selected from transition metal elements, 0.1<x<0.5, 0<a<1, 0<b<1, and a+b=1.
DIELECTRIC COMPOSITION AND ELECTRONIC COMPONENT
In order to provide a dielectric composition having high relative permittivity at a wide range of temperatures, the main component of a dielectric composition includes strontium and tantalum.
DIELECTRIC COMPOSITION AND ELECTRONIC COMPONENT
In order to provide a dielectric composition having high relative permittivity at a wide range of temperatures, the main component of a dielectric composition includes strontium and tantalum.
METHODS OF MAKING HIGH Q MODIFIED MATERIALS FOR HIGH FREQUENCY APPLICATIONS
Disclosed are embodiments of making a high Q ceramic material. The method includes providing Ba.sub.3CoTa.sub.2O.sub.9 and incorporating one of Ba.sub.2MgWO.sub.6, Ba.sub.8LiTa.sub.5WO.sub.24, Ba.sub.8LiTa.sub.5WO.sub.24, Ba.sub.2MgWO.sub.6, Ba.sub.3LaTa.sub.3O.sub.12, Ba.sub.8LiTa.sub.5WO.sub.24, BaLaLiWO.sub.6, Ba.sub.4Ta.sub.2WO.sub.12, Ba.sub.2La.sub.2MgW.sub.2O.sub.12, BaLaLiWO.sub.6, Sr.sub.3LaTa.sub.3O.sub.12, and SrLaTaO.sub.12 into the Ba.sub.3CoTa.sub.2O.sub.9 to form a solid solution having a high Q value of greater than 12000 at about 10 GHz.
METHODS OF MAKING HIGH Q MODIFIED MATERIALS FOR HIGH FREQUENCY APPLICATIONS
Disclosed are embodiments of making a high Q ceramic material. The method includes providing Ba.sub.3CoTa.sub.2O.sub.9 and incorporating one of Ba.sub.2MgWO.sub.6, Ba.sub.8LiTa.sub.5WO.sub.24, Ba.sub.8LiTa.sub.5WO.sub.24, Ba.sub.2MgWO.sub.6, Ba.sub.3LaTa.sub.3O.sub.12, Ba.sub.8LiTa.sub.5WO.sub.24, BaLaLiWO.sub.6, Ba.sub.4Ta.sub.2WO.sub.12, Ba.sub.2La.sub.2MgW.sub.2O.sub.12, BaLaLiWO.sub.6, Sr.sub.3LaTa.sub.3O.sub.12, and SrLaTaO.sub.12 into the Ba.sub.3CoTa.sub.2O.sub.9 to form a solid solution having a high Q value of greater than 12000 at about 10 GHz.
METHODS OF MAKING HIGH Q MODIFIED BARIUM-BASED MATERIALS FOR HIGH FREQUENCY APPLICATIONS
Disclosed are embodiments of making a high Q ceramic material. The method includes providing Ba.sub.3NiTa.sub.2O.sub.9 and incorporating one of Ba.sub.2MgWO.sub.6, Ba.sub.8LiTa.sub.5WO.sub.24, Ba.sub.8LiTa.sub.5WO.sub.24, Ba.sub.2MgWO.sub.6, Ba.sub.3LaTa.sub.3O.sub.12, Ba.sub.8LiTa.sub.5WO.sub.24, BaLaLiWO.sub.6, Ba.sub.4Ta.sub.2WO.sub.12, Ba.sub.2La.sub.2MgW.sub.2O.sub.12, BaLaLiWO.sub.6, Sr.sub.3LaTa.sub.3O.sub.12, and SrLaTaO.sub.12 into the Ba.sub.3NiTa.sub.2O.sub.9 to form a solid solution having a high Q value of greater than 12000 at about 10 GHz.
METHODS OF MAKING HIGH Q MODIFIED BARIUM-BASED MATERIALS FOR HIGH FREQUENCY APPLICATIONS
Disclosed are embodiments of making a high Q ceramic material. The method includes providing Ba.sub.3NiTa.sub.2O.sub.9 and incorporating one of Ba.sub.2MgWO.sub.6, Ba.sub.8LiTa.sub.5WO.sub.24, Ba.sub.8LiTa.sub.5WO.sub.24, Ba.sub.2MgWO.sub.6, Ba.sub.3LaTa.sub.3O.sub.12, Ba.sub.8LiTa.sub.5WO.sub.24, BaLaLiWO.sub.6, Ba.sub.4Ta.sub.2WO.sub.12, Ba.sub.2La.sub.2MgW.sub.2O.sub.12, BaLaLiWO.sub.6, Sr.sub.3LaTa.sub.3O.sub.12, and SrLaTaO.sub.12 into the Ba.sub.3NiTa.sub.2O.sub.9 to form a solid solution having a high Q value of greater than 12000 at about 10 GHz.
High Q modified barium tantalate for high frequency applications
Disclosed are embodiments of a barium magnesium tantalate including additional components to increase the Q value of the material. In some embodiments, complex tungsten oxides and/or hexagonal perovskite crystal structures can be added into the barium magnesium tantalate to provide for advantageous properties. In some embodiments, no tin is used in the formation of the material.