An electrical feedthrough assembly for an implantable medical device includes an outer ferrule of metallic material having an outer surface hermetically sealed to an implantable device housing. There is an inner feedthrough assembly which is hermetically sealed within the ferrule and which has a structure of sintered layers that include: i. an electrical insulator of ceramic insulator material, ii. one or more electrically conductive vias of metallized conductive material embedded within and extending through the electrical insulator, and iii. a transition interface region around each of the conductive vias comprising a gradient mixture of the ceramic insulator material and the metallized conductive material forming a gradual transition and a mechanical bond between the electrical insulator and the conductive via.

An electrical feedthrough assembly for an implantable medical device includes an outer ferrule of metallic material having an outer surface hermetically sealed to an implantable device housing. There is an inner feedthrough assembly which is hermetically sealed within the ferrule and which has a structure of sintered layers that include: i. an electrical insulator of ceramic insulator material, ii. one or more electrically conductive vias of metallized conductive material embedded within and extending through the electrical insulator, and iii. a transition interface region around each of the conductive vias comprising a gradient mixture of the ceramic insulator material and the metallized conductive material forming a gradual transition and a mechanical bond between the electrical insulator and the conductive via.

A flame resistant electrical insulating material comprises glass fibers, a particulate filler mixture, and an inorganic binder, wherein the electrical insulating material has a UL-94 flammability rating of V-0, 5VA and a thermal conductivity of less than 0.15 W/m-K. The particulate filler mixture comprises at least two particulate filler materials selected from the list of glass bubbles, kaolin clay, talc, mica, calcium carbonate, and alumina trihydrate. In an exemplary aspect, the insulating material is not punctured after direct exposure to 2054° C. (3730° F.) flame for at least 10 minutes.

An alumina crystal particle(s), a zirconia crystal particle(s), Ti, Mg, and Si are included, where, when Ti is converted into TiO2, Mg is converted into MgO, and Si is converted into SiO2, a total content of Ti, Mg, and Si is 1.4% by mass or greater, when zirconia that composes the zirconia crystal particle(s) is denoted by ZrO2, a content of a rare-earth element relative to ZrO2 in the zirconia crystal particle(s) is 2 mol % or less in an oxide equivalent thereof, the zirconia crystal particle(s) include(s) at least one of a separate particle(s) with a maximum length of 1 μm or greater and an aggregated particle(s) with a maximum length of 1 μm or greater, and a total of ratios of the separate particle(s) with a maximum length of 1 μm or greater and the aggregated particle(s) with a maximum length of 1 μm or greater is 50% by volume or greater of a whole of the zirconia crystal particle(s).

An alumina crystal particle(s), a zirconia crystal particle(s), Ti, Mg, and Si are included, where, when Ti is converted into TiO2, Mg is converted into MgO, and Si is converted into SiO2, a total content of Ti, Mg, and Si is 1.4% by mass or greater, when zirconia that composes the zirconia crystal particle(s) is denoted by ZrO2, a content of a rare-earth element relative to ZrO2 in the zirconia crystal particle(s) is 2 mol % or less in an oxide equivalent thereof, the zirconia crystal particle(s) include(s) at least one of a separate particle(s) with a maximum length of 1 μm or greater and an aggregated particle(s) with a maximum length of 1 μm or greater, and a total of ratios of the separate particle(s) with a maximum length of 1 μm or greater and the aggregated particle(s) with a maximum length of 1 μm or greater is 50% by volume or greater of a whole of the zirconia crystal particle(s).

According to the present invention, a dielectric ceramic composition, which can be fired in a reducing atmosphere, has a high dielectric constant, has an electrostatic capacity exhibiting little change, when used as a dielectric layer of a ceramic electronic component such as a laminated ceramic capacitor even under a condition of 150 to 200° C., and has small dielectric losses at 25° C. and 200° C., can be provided.

According to the present invention, a dielectric ceramic composition, which can be fired in a reducing atmosphere, has a high dielectric constant, has an electrostatic capacity exhibiting little change, when used as a dielectric layer of a ceramic electronic component such as a laminated ceramic capacitor even under a condition of 150 to 200° C., and has small dielectric losses at 25° C. and 200° C., can be provided.

Examples of a high voltage insulator are described. The high-voltage insulator is vacuum compatible and comprises a glass substrate having a face surface and a ceramic layer with uniform thickness coated on the face surface of 5 the glass substrate. The coated surface of the insulator is able to withstand high voltage pulses and exposure to charged particles radiation for a pre-determined time period. The ceramic coated glass insulator is made of a single piece of glass and can be made to large sizes.

Examples of a high voltage insulator are described. The high-voltage insulator is vacuum compatible and comprises a glass substrate having a face surface and a ceramic layer with uniform thickness coated on the face surface of 5 the glass substrate. The coated surface of the insulator is able to withstand high voltage pulses and exposure to charged particles radiation for a pre-determined time period. The ceramic coated glass insulator is made of a single piece of glass and can be made to large sizes.

A thin film capacitor for which electrode conductivity is high and electrode irregularities are unlikely to be generate even if the capacitor if heated up to 700° C. This thin film capacitor has a first electrode, a dielectric layer, and a second electrode. The dielectric layer contains an ABO.sub.2N-type oxynitride. The nitrogen concentration of the part of the dielectric layer that contacts the first electrode is no more than half the nitrogen concentration of the center part of the dielectric layer.