A glass that contains Si, B, Al, and Zn. The glass has SiO.sub.2 at a content of 15% by weight to 65% by weight, B.sub.2O.sub.3 at a content of 11% by weight to 30% by weight, Al.sub.2O.sub.3, and ZnO, wherein a weight ratio of the SiO.sub.2 to the B.sub.2O.sub.3 (SiO.sub.2/B.sub.2O.sub.3) is 1.21 or higher, and a weight ratio of the Al.sub.2O.sub.3 to the ZnO (Al.sub.2O.sub.3/ZnO) is 0.75 to 1.64, and wherein an alkaline-earth metal is excluded as a material contained in the glass.

A glass that contains Si, B, Al, and Zn. The glass has SiO.sub.2 at a content of 15% by weight to 65% by weight, B.sub.2O.sub.3 at a content of 11% by weight to 30% by weight, Al.sub.2O.sub.3, and ZnO, wherein a weight ratio of the SiO.sub.2 to the B.sub.2O.sub.3 (SiO.sub.2/B.sub.2O.sub.3) is 1.21 or higher, and a weight ratio of the Al.sub.2O.sub.3 to the ZnO (Al.sub.2O.sub.3/ZnO) is 0.75 to 1.64, and wherein an alkaline-earth metal is excluded as a material contained in the glass.

An insulating composition comprising a polymer resin, a nanoclay, and one or more nanofillers. The insulating composition has a thermal conductivity of greater than about 0.8 W/mK, a dielectric constant of less than about 5, a dissipation factor of less than about 3%, and a breakdown strength of greater than about 1,000 V/mil. The insulating composition has an endurance life of at least 400 hours at 310 volts per mil.

A dielectric ceramic composition contains dielectric particles containing a main component represented by a composition formula (Ba.sub.1-x-ySr.sub.xCa.sub.y).sub.m(Ti.sub.1-zZr.sub.z)O.sub.3 and grain boundaries present between the dielectric particles. The values of m, x, y, and z in the composition formula are all molar ratios. In the composition formula, 0.9≤m≤1.4, 0≤x<1.0, 0<y≤1.0, 0.9≤(x+y)≤1.0, and 0.9≤z≤1.0 are satisfied. The dielectric particles contain specific structural particles having a predetermined intragranular structure, and each of the specific structural particles intragranularly includes a first region and a second region having different Ca concentrations from each other. C2/C1 is less than 0.8 in which C1 is an average value of the Ca concentration in the first region and C2 is an average value of the Ca concentration in the second region.

The invention belongs to the field of electronic ceramics and its manufacturing, in particular to the modified NiO-Ta.sub.2O.sub.5-based microwave dielectric ceramic material sintered at low temperature and its preparation method. It is guided by ion doping modification, not only considering the substitution of ions with similar radius, such as Zn.sup.2+ replacing Ni.sup.2+ ions, V.sup.5+ replacing Ta.sup.5+ ions; Meanwhile, the selected doped oxide still has the property of low melting point. Therefore, the microwave dielectric properties of NiO-Ta.sub.2O.sub.5-based ceramic material can be improved and the appropriate sintering temperature can be reduced. In the invention, by adjusting the molar content of each raw material, the NiO-Ta.sub.2O.sub.5-based ceramic material with low-temperature sintering, stable temperature and excellent microwave dielectric property is directly synthesized at one time, which can be widely applied to the technical field of LTCC.

A ceramic subassembly manufactured by a 3D-printing process is described. The ceramic subassembly comprises a ceramic substrate having a sidewall extending to spaced apart first and second end surfaces. At least one via extends through the substrate from the ceramic substrate first end surface to the ceramic substrate second end surface. In cross-section, the via has a square-shape with rounded corners.

A temperature-stable modified NiO—Ta.sub.2O.sub.5-based microwave dielectric ceramic material and a preparation method thereof are provided. Using ion doping modification to form solid solution structure is an important measure to adjust microwave dielectric properties, especially the temperature stability. Based on formation rules of the solid solution, ion replacement methods are designed including Ni.sup.2+ ions are replaced by Cu.sup.2+ ions, and (Ni.sub.1/3Ta.sub.2/3).sup.4+ composite ions are replaced by [(Al.sub.1/2Nb.sub.1/2).sub.ySn.sub.1-y].sup.4+ composite ions, which considers that cations with similar ionic radii to Ni.sup.2+ and Ta.sup.5+ ions can be introduced into the NiTa.sub.2O.sub.6 ceramic for doping under the same coordination environment (coordination number=6), and therefore a ceramic material with the NiTa.sub.2O.sub.6 solid solution structure can be obtained. The microwave dielectric ceramic material with excellent temperature stability and low loss is finally prepared by adjusting molar contents of each of doped ions, and its microwave dielectric properties are excellent.

A temperature-stable modified NiO—Ta.sub.2O.sub.5-based microwave dielectric ceramic material and a preparation method thereof are provided. Using ion doping modification to form solid solution structure is an important measure to adjust microwave dielectric properties, especially the temperature stability. Based on formation rules of the solid solution, ion replacement methods are designed including Ni.sup.2+ ions are replaced by Cu.sup.2+ ions, and (Ni.sub.1/3Ta.sub.2/3).sup.4+ composite ions are replaced by [(Al.sub.1/2Nb.sub.1/2).sub.ySn.sub.1-y].sup.4+ composite ions, which considers that cations with similar ionic radii to Ni.sup.2+ and Ta.sup.5+ ions can be introduced into the NiTa.sub.2O.sub.6 ceramic for doping under the same coordination environment (coordination number=6), and therefore a ceramic material with the NiTa.sub.2O.sub.6 solid solution structure can be obtained. The microwave dielectric ceramic material with excellent temperature stability and low loss is finally prepared by adjusting molar contents of each of doped ions, and its microwave dielectric properties are excellent.

The invention belongs to the field of electronic ceramics and its manufacturing, in particular to the modified NiTa.sub.2O.sub.6-based microwave dielectric ceramic material co-sintered at low temperature and its preparation method. Based on the low melting point characteristics of CuO and B.sub.2O.sub.3, and the radius of Cu.sup.2+ ions is similar to that of Ni.sup.2+ and Ta.sup.5+ ions, the chemical general formula of the invention is designed as xCuO-(1-x)NiO-[7.42y+(xy/14.33)]B.sub.2O.sub.3—Ta.sub.2O.sub.5, and the molar content of each component is adjusted from raw materials. The main crystalline phase of NiTa.sub.2O.sub.6 is synthesized at a lower pre-sintering temperature, and NiTa.sub.2O.sub.6-based ceramic material with low-temperature sintering characteristics and excellent microwave dielectric properties are directly synthesized at one time, which broadened the application range in LTCC field.

A gap sub assembly for electromagnetic telemetry used in downhole drilling. The gap sub comprises a female part comprising a female mating section and a male part comprising a male mating section. The male mating section is matingly received within the female mating section and electrically isolated therefrom. One or more electrically insulating bodies secure the male part axially and torsionally relative to the female part. The electrically insulating bodies also electrically isolate the male part from the female part. The electrically insulating bodies can be installed through apertures in the female part or at least some of the electrically insulating bodies can be installed before the male mating section is inserted into the female mating section. The electrically insulating bodies can be held in place on the male mating section using a retention apparatus such as a ring, a scarf, pods or an adhesive.