A method for producing a long length high temperature superconductor wire, includes providing a substrate, having a surface with a length of at least 50 meters and a width. The surface supports a biaxially textured high temperature superconducting layer and the biaxially textured high temperature superconducting layer has a length and a width corresponding to the length and width of the surface of the substrate. The method includes irradiating the biaxially textured high temperature superconductor layer with an ion beam impinging uniformly along the length and across the width of the biaxially textured high temperature superconductor layer to produce a uniform distribution of pinning microstructures in the biaxially textured high temperature superconductor layer.

A method for producing a long length high temperature superconductor wire, includes providing a substrate, having a surface with a length of at least 50 meters and a width. The surface supports a biaxially textured high temperature superconducting layer and the biaxially textured high temperature superconducting layer has a length and a width corresponding to the length and width of the surface of the substrate. The method includes irradiating the biaxially textured high temperature superconductor layer with an ion beam impinging uniformly along the length and across the width of the biaxially textured high temperature superconductor layer to produce a uniform distribution of pinning microstructures in the biaxially textured high temperature superconductor layer.

Methods of pre-densifying a metal wire containing superconductor materials are provided. Superconductor materials containing the pre-densified wires also are provided. The wires may be pre-densified by subjecting a metal wire that includes one or more filament cavities in which a superconductor precursor powder is disposed to a temperature and a first pressure for a time sufficient to densify the superconductor precursor powder to form a pre-densified metal wire, wherein the temperature is less than the melting point of the superconductor precursor powder, and the first pressure is sufficient, at the temperature, to compress at least a portion of the metal wire.

In embodiments of the invention, a superconductor lead is configured to have less ohmic heating by its own current and less heat conduction from room temperature to cryogenic temperature, where a cryogenic apparatus is located. The superconducting lead with no ohmic resistance and low thermal conductivity disclosed herein maximizes current capacity by placing superconductors in parallel, each having equal current. Thus, the resistances are controlled to provide uniform current distribution through each superconductor of the high temperature superconducting (HTS) lead.

Provided is a low-resistance connection body for a high-temperature superconducting wire, in which a high-temperature superconducting bulk body and a high-temperature superconducting wire including a high-temperature superconducting layer are connected to each other, wherein a melting point of the high-temperature superconducting layer is higher than a melting point of the high-temperature superconducting bulk body; the high-temperature superconducting layer and the high-temperature superconducting bulk body are in contact at a connection site of the high-temperature superconducting wire and the high-temperature superconducting bulk body; and a surface of the high-temperature superconducting bulk body that is in contact with the high-temperature superconducting layer is crystallized due to crystal growth. Two high-temperature superconducting wires can be connected, with low resistance, through connection of the two high-temperature superconducting wires to one high-temperature superconducting bulk.

Provided is a low-resistance connection body for a high-temperature superconducting wire, in which a high-temperature superconducting bulk body and a high-temperature superconducting wire including a high-temperature superconducting layer are connected to each other, wherein a melting point of the high-temperature superconducting layer is higher than a melting point of the high-temperature superconducting bulk body; the high-temperature superconducting layer and the high-temperature superconducting bulk body are in contact at a connection site of the high-temperature superconducting wire and the high-temperature superconducting bulk body; and a surface of the high-temperature superconducting bulk body that is in contact with the high-temperature superconducting layer is crystallized due to crystal growth. Two high-temperature superconducting wires can be connected, with low resistance, through connection of the two high-temperature superconducting wires to one high-temperature superconducting bulk.

An oxide superconducting thin film wire includes a metal substrate, a laminate, and a Cu stabilizing layer. The metal substrate includes a supporting base material and a conductive layer located on the supporting base material. The conductive layer includes a Cu layer serving as an internal layer and a biaxially orientated surface layer. The laminate includes a buffer layer, an oxide superconducting layer, and a Ag stabilizing layer stacked on the metal substrate in this order from the metal substrate. The Cu stabilizing layer is formed so as to surround the laminate and the metal substrate. At least one of the Cu stabilizing layer and the Ag stabilizing layer is formed so as to be in contact with at least a portion of the conductive layer of the metal substrate and be electrically conductive with the conductive layer of the metal substrate.

An oxide superconducting thin film wire includes a metal substrate, a laminate, and a Cu stabilizing layer. The metal substrate includes a supporting base material and a conductive layer located on the supporting base material. The conductive layer includes a Cu layer serving as an internal layer and a biaxially orientated surface layer. The laminate includes a buffer layer, an oxide superconducting layer, and a Ag stabilizing layer stacked on the metal substrate in this order from the metal substrate. The Cu stabilizing layer is formed so as to surround the laminate and the metal substrate. At least one of the Cu stabilizing layer and the Ag stabilizing layer is formed so as to be in contact with at least a portion of the conductive layer of the metal substrate and be electrically conductive with the conductive layer of the metal substrate.

Bi-layer barrier assemblies for iron-based superconductor (IBS) and associated sheathed wire fabrication methods employ insulating material to prevent interdiffusion between inner silver (Ag) and outer matrix components at heat treatments. A superconductor assembly comprises a core IBS material (e.g., mono-filamentary or multi-filamentary IBS powder) layered, in turn, with an AG barrier material, an insulating barrier material (e.g., niobium (Nb), tantalum (Ta), and/or a NbTa alloy); and a matrix material (e.g., copper (Cu), Cu alloy, and/or monel). Assembly comprises 1) packing the IBS material into the Ag sheath (barrier) material, defining a packed first assembly; 2) layering the insulating barrier material upon the Ag sheath material, defining an insulated second assembly; and 3) layering the matrix material upon the insulating material, defining a matrixed third assembly. Additional steps may comprise respective drawing of the packed first assembly, the insulated second assembly, and/or the matrixed third assembly, and/or stacking for multi-filamentary implementations.

Bi-layer barrier assemblies for iron-based superconductor (IBS) and associated sheathed wire fabrication methods employ insulating material to prevent interdiffusion between inner silver (Ag) and outer matrix components at heat treatments. A superconductor assembly comprises a core IBS material (e.g., mono-filamentary or multi-filamentary IBS powder) layered, in turn, with an AG barrier material, an insulating barrier material (e.g., niobium (Nb), tantalum (Ta), and/or a NbTa alloy); and a matrix material (e.g., copper (Cu), Cu alloy, and/or monel). Assembly comprises 1) packing the IBS material into the Ag sheath (barrier) material, defining a packed first assembly; 2) layering the insulating barrier material upon the Ag sheath material, defining an insulated second assembly; and 3) layering the matrix material upon the insulating material, defining a matrixed third assembly. Additional steps may comprise respective drawing of the packed first assembly, the insulated second assembly, and/or the matrixed third assembly, and/or stacking for multi-filamentary implementations.