Patent classifications
H01C1/028
RESISTOR
A resistor includes: a first resin protruding part formed in the bottom surface of an exterior material (mold resin body), on an end opposite to a leading side of harness wires along the length of the exterior material near a through-hole piercing an upper surface and a lower surface of the exterior material, and a second resin protruding part, surrounding the circumference of a metal bush embedded in the through-hole and the entire circumference of the resistor substrate. Moreover, a concave part is formed in a region sandwiched between the first resin protruding part and the second resin protruding part.
RESISTOR COMPONENT
A resistor component includes an insulating substrate; a resistance layer disposed on one surface of the insulating substrate; and first and second terminals disposed on the insulating substrate to be spaced apart from each other and connected to the resistance layer, wherein each the first and second terminals comprises an inner electrode layer disposed on the resistance layer, and a via electrode penetrating the resistance layer to be in contact with the one surface of the insulating substrate and the inner electrode layer.
RESISTOR COMPONENT
A resistor component includes an insulating substrate having one surface and the other surface and one end surface and the other end surface, a slit portion disposed on the one end surface and the other end surface and extending to the one surface and the other surface, a resistor layer disposed on the one surface, and a first terminal and a second terminal connected to the resistor layer. The first and second terminals include: an internal electrode layer including an upper electrode disposed on the one surface, a lower electrode disposed on the other surface, and a slit electrode disposed on an internal wall of the slit portion, and an external electrode layer disposed on the one end surface, the other end surface, and the internal wall of the slit portion, being in contact with the slit electrode, having a thickness less than a thickness of the internal electrode layer.
RESISTOR COMPONENT
A resistor component includes an insulating substrate; a resistance layer disposed on a first surface of the insulating layer; and first and second terminals, spaced apart from each other, disposed on an external surface of the insulating substrate and connected to the resistance layer; a marking pattern portion disposed on a second surface of the insulating layer, opposing the first surface of the insulating substrate; and a marking protection layer disposed on the second surface and covering the marking pattern portion.
DEADFRONT ARRESTER WITH DISCONNECTOR DEVICE
Systems for disconnecting a surge arrester. One embodiment provides a surge arrester comprising a housing, a connecting interface configured to connect to an electrical power grid, and a disconnector device coupled to the connecting interface. A metal oxide varistor stack is coupled to the disconnector device, and a ground side connection is coupled to the metal oxide varistor stack, the ground side connection configured to connect to a system ground. The disconnector device is configured to disconnect the connecting interface from the system ground based on a predetermined disconnection condition.
Chip resistor and mounting structure thereof
A chip resistor with a reduced thickness is provided. The chip resistor includes an insulating substrate, a resistor embedded in the substrate, a first electrode electrically connected to the resistor, and a second electrode electrically connected to the resistor. The first electrode and the second electrode are spaced apart from each other in a lateral direction that is perpendicular to the thickness direction of the substrate.
Chip resistor and mounting structure thereof
A chip resistor with a reduced thickness is provided. The chip resistor includes an insulating substrate, a resistor embedded in the substrate, a first electrode electrically connected to the resistor, and a second electrode electrically connected to the resistor. The first electrode and the second electrode are spaced apart from each other in a lateral direction that is perpendicular to the thickness direction of the substrate.
THERMISTOR AND METHOD FOR MANUFACTURING THERMISTOR
A thermistor includes a thermistor element, a protective film formed on the surface of the thermistor element, and electrode portions formed on both end portions of the thermistor element, in which the protective film is formed of silicon oxide, and, as a result of observing a bonding interface between the thermistor element and the protective film, a ratio L/L.sub.0 of a length L of an observed peeled portion to a length L.sub.0 of the bonding interface in an observation field is 0.16 or less.
THERMISTOR WITH PROTECTIVE FILM AND MANUFACTURING METHOD THEREOF
A thermistor has a thermistor element, a protective film, and an electrode portion. The protective film is formed of a SiO.sub.2 film having a film thickness in a range of 50 nm or more and 1000 nm or less. The protective film is formed in contact with the thermistor element. Alkali metal is unevenly distributed in a region including an interface between the thermistor element and the protective film.
Resistor component
A resistor component includes an insulating substrate having one surface and the other surface and one end surface and the other end surface, a slit portion disposed on the one end surface and the other end surface and extending to the one surface and the other surface, a resistor layer disposed on the one surface, and a first terminal and a second terminal connected to the resistor layer. The first and second terminals include: an internal electrode layer including an upper electrode disposed on the one surface, a lower electrode disposed on the other surface, and a slit electrode disposed on an internal wall of the slit portion, and an external electrode layer disposed on the one end surface, the other end surface, and the internal wall of the slit portion, being in contact with the slit electrode, having a thickness less than a thickness of the internal electrode layer.