Patent classifications
H01C1/084
Resistor and its manufacturing method
A resistor is composed of a resistor body part and a molded resin in which the resistor body part is embedded. The molded resin includes a base resin and a filler that is higher in thermal conductivity than the base resin.
Resistor
A resistor includes a resistor main body, and a resin portion covering the resistor main body. The resin portion includes a radiation fin.
Resistor
A resistor includes a resistor main body, and a resin portion covering the resistor main body. The resin portion includes a radiation fin.
THIN FILM RESISTOR WITH VIABAR STRUCTURE
A thin-film resistor (TFR) includes conductive line(s) and a resistive layer over the conductive line(s). The TFR also includes at least one viabar structure coupled to the resistive layer and including a first viabar portion electrically connected to the resistive layer at an edge thereof and a second viabar portion electrically connected to the conductive line(s). In other cases, a viabar structures partially land over the resistive layer and are electrically connected to an edge of the resistive layer and partially land on the conductive line(s). Among other advantages, the viabar structure reduces current crowding from tight contact spacing, and allows alternative routing of interconnects to the TFR.
THIN FILM RESISTOR WITH VIABAR STRUCTURE
A thin-film resistor (TFR) includes conductive line(s) and a resistive layer over the conductive line(s). The TFR also includes at least one viabar structure coupled to the resistive layer and including a first viabar portion electrically connected to the resistive layer at an edge thereof and a second viabar portion electrically connected to the conductive line(s). In other cases, a viabar structures partially land over the resistive layer and are electrically connected to an edge of the resistive layer and partially land on the conductive line(s). Among other advantages, the viabar structure reduces current crowding from tight contact spacing, and allows alternative routing of interconnects to the TFR.
Thin film resistor with viabar structure
A thin-film resistor (TFR) includes conductive line(s) and a resistive layer over the conductive line(s). The TFR also includes at least one viabar structure coupled to the resistive layer and including a first viabar portion electrically connected to the resistive layer at an edge thereof and a second viabar portion electrically connected to the conductive line(s). In other cases, a viabar structures partially land over the resistive layer and are electrically connected to an edge of the resistive layer and partially land on the conductive line(s). Among other advantages, the viabar structure reduces current crowding from tight contact spacing, and allows alternative routing of interconnects to the TFR.
Thin film resistor with viabar structure
A thin-film resistor (TFR) includes conductive line(s) and a resistive layer over the conductive line(s). The TFR also includes at least one viabar structure coupled to the resistive layer and including a first viabar portion electrically connected to the resistive layer at an edge thereof and a second viabar portion electrically connected to the conductive line(s). In other cases, a viabar structures partially land over the resistive layer and are electrically connected to an edge of the resistive layer and partially land on the conductive line(s). Among other advantages, the viabar structure reduces current crowding from tight contact spacing, and allows alternative routing of interconnects to the TFR.
High frequency and high power thin-film component
A surface mount component is disclosed including an electrically insulating beam that is thermally conductive. The electrically insulating beam has a first end and a second end that is opposite the first end. The surface mount component includes a thin-film component formed on the electrically insulating beam adjacent the first end of the electrically insulating beam. A heat sink terminal is formed on the electrically insulating beam adjacent a second end of the electrically insulating beam. In some embodiments, the thin-film component has an area power capacity of greater than about 0.17 W/mm.sup.2 at about 28 GHz.