Resistive elements are formed in belt shape in regions sandwiched between secondary division prediction lines set onto a large substrate and extending in a direction orthogonal to primary division prediction lines, a plurality of front electrodes disposed facing each other at predetermined intervals on the resistive elements are formed so as to be across the primary division prediction lines, a glass coat layer covering each of the resistive elements and extending in the direction orthogonal to the secondary division prediction lines is formed, a resin coat layer covering an entire surface of the large substrate from a top of the glass coat layer is formed, and after that, the large substrate is diced along the primary division prediction lines and the secondary division prediction lines to obtain individual chip base bodies.

A thermistor-based thermal probe includes a thermistor die having a thermistor thereon with first and second bond pads coupled across the thermistor, and first and second die interconnects coupled to the respective bond pads. First and second wires W1, W2 that extend beyond the thermistor die are attached to the first and to the second die interconnects, respectively. An encapsulant material encapsulates the thermistor die and a die end of the first and second wires.

A chip component comprises: an insulating substrate on which a resistor serving as a functional element is formed; a pair of internal electrodes (front electrodes, end surface electrodes, and back electrodes) that is formed to cover both end portions of the insulating substrate and connected to the resistor; a barrier layer that is formed on a surface of each of the internal electrodes and mainly composed of nickel; and an external connection layer that is formed on a surface of the barrier layer and mainly composed of tin, and the barrier layer is composed of alloy plating (Ni—P) including nickel and phosphorus, which is formed by electrolytic plating, and a content ratio of phosphorus relative to nickel is set in a range of 0.5% to 5% so that the barrier layer has magnetism.

A transient voltage protection device includes: an element body; a cavity portion provided in the element body; a pair of internal electrodes disposed in the element body; and a pair of external electrodes connected to the pair of internal electrodes. The pair of internal electrodes extend along a first direction and face each other in a second direction intersecting the first direction. The cavity portion includes a gap region located between the pair of internal electrodes in the second direction. A tip portion of at least one of the pair of internal electrodes is in contact with only the element body.

A chip resistor includes a substrate, an upper electrode and a resistor body, a back electrode, a side electrode, and a metal plating layer. The substrate includes an upper surface, a back surface that intersect a thickness-wise direction and a side surface that joins the upper surface and the back surface. The upper electrode and the resistor body are formed on the upper surface. The back electrode is formed on the back surface. The side electrode is formed on the side surface. The metal plating layer includes a back plating layer and a side plating layer. The back plating layer covers at least a portion of the back electrode. The side plating layer covers at least a portion of the side electrode. The metal plating layer has a thickness that is greater than or equal to 10 μm and less than or equal to 60 μm.

A sulfurization detection resistor includes: a rectangle-shaped insulating substrate; pair of front electrodes formed at both ends facing each other on a surface of the insulating substrate; plurality of sulfurization detection conductors arranged in parallel between the paired front electrodes; plurality of resistors connected between the ends of each of the sulfurization detection conductors and the paired front electrodes; and sulfide gas impermeable protective film that covers all of the resistors and some of the sulfurization detection conductors, wherein each of the sulfurization detection conductors has a sulfurization detection unit exposed from a window hole in the protective film; and by covering the sulfurization detection units with different types of sulfurization rate adjustment layers formed of an acrylic resin, a silicon resin, and the like, timing of disconnection is set so as to vary in response to a cumulative amount of sulfurization in each of the sulfurization detection units.

A sulfurization detection resistor includes: a rectangle-shaped insulating substrate; pair of front electrodes formed at both ends facing each other on a surface of the insulating substrate; plurality of sulfurization detection conductors arranged in parallel between the paired front electrodes; plurality of resistors connected between the ends of each of the sulfurization detection conductors and the paired front electrodes; and sulfide gas impermeable protective film that covers all of the resistors and some of the sulfurization detection conductors, wherein each of the sulfurization detection conductors has a sulfurization detection unit exposed from a window hole in the protective film; and by covering the sulfurization detection units with different types of sulfurization rate adjustment layers formed of an acrylic resin, a silicon resin, and the like, timing of disconnection is set so as to vary in response to a cumulative amount of sulfurization in each of the sulfurization detection units.

A semiconductor device includes an insulating layer, a first conductive film, a second conductive film and a thin-film resistor. The insulating layer has a penetrating portion. The first conductive film is formed in the penetrating portion such that a recess is formed at an upper part of the penetration portion. The second conductive film is formed on an upper surface of the first conductive film and an inner surface of the penetrating portion. The thin-film resistor includes silicon and metal. The thin-film resistor is formed on the second conductive film and the insulating layer.

A varistor includes a sintered body, an internal electrode, an insulating layer, and an external electrode. The internal electrode is disposed in an interior of the sintered body. The insulating layer covers at least part of the sintered body and includes Zn.sub.2SiO.sub.4. The external electrode is electrically connected to the internal electrode, covers part of the sintered body and part of the insulating layer, and is in contact with the part of the insulating layer. The insulating layer has a region being in contact with the external electrode, the region having a greater average thickness than a region of the insulating layer which is out of contact with the external electrode.

A varistor includes a sintered body, an internal electrode, an insulating layer, and an external electrode. The internal electrode is disposed in an interior of the sintered body. The insulating layer covers at least part of the sintered body and includes Zn.sub.2SiO.sub.4. The external electrode is electrically connected to the internal electrode, covers part of the sintered body and part of the insulating layer, and is in contact with the part of the insulating layer. The insulating layer has a region being in contact with the external electrode, the region having a greater average thickness than a region of the insulating layer which is out of contact with the external electrode.