The mounting area for an electronic component and a resistor for current detection is reduced. A current detection resistor for detecting current includes a plate-like resistive body, and a first electrode and an opposite second electrode which are stacked in a thickness direction of the resistive body and are disposed so as to sandwich the resistive body. The first electrode has a groove portion.

The mounting area for an electronic component and a resistor for current detection is reduced. A current detection resistor for detecting current includes a plate-like resistive body, and a first electrode and an opposite second electrode which are stacked in a thickness direction of the resistive body and are disposed so as to sandwich the resistive body. The first electrode has a groove portion.

A sintered body has a first end face and a second end face opposite to each other in a first direction and a first side face and a second side face opposite to each other in a second direction. A first end face electrode is disposed on the first end face except for end portions of the first end face in the second direction. A second end face electrode is disposed on the second end face except for end portions of the second end face in the second direction. A first side face electrode is disposed on the first side face except for end portions of the first side face in the first direction. A second side face electrode is disposed on the second side face except for end portions of the second side face in the first direction.

A multilayer varistor includes: a sintered compact; an internal electrode provided inside the sintered compact; a high-resistivity layer arranged to cover the sintered compact at least partially and containing element Si; and an external electrode arranged to cover the high-resistivity layer partially, electrically connected to the internal electrode, and containing silver as a main component thereof. A ratio of a total mass of the alkali metals and the alkaline earth metals to a mass of the element Si in a surface region of the high-resistivity layer is equal to or less than 0.6.

A chip resistor structure includes a substrate; a pair of first electrodes disposed opposite to each other on a first surface of the substrate at a first interval; a resistance layer disposed between the pair of first electrodes on the first surface; a spacer layer made of a material having a composition different from that of the resistance layer, disposed over the pair of first electrodes; a protective layer overlying the resistance layer; and a plating layer electroplated onto the pair of first electrodes and the spacer layer, and having ends extending beyond the pair of first electrodes terminate at least over the spacer layer. The plating layer may be joined with or spaced from or climb up to the protective layer on or above the spacer layer.

A chip resistor structure includes a substrate; a pair of first electrodes disposed opposite to each other on a first surface of the substrate at a first interval; a resistance layer disposed between the pair of first electrodes on the first surface; a spacer layer made of a material having a composition different from that of the resistance layer, disposed over the pair of first electrodes; a protective layer overlying the resistance layer; and a plating layer electroplated onto the pair of first electrodes and the spacer layer, and having ends extending beyond the pair of first electrodes terminate at least over the spacer layer. The plating layer may be joined with or spaced from or climb up to the protective layer on or above the spacer layer.

A chip resistor with a reduced thickness is provided. The chip resistor includes an insulating substrate, a resistor embedded in the substrate, a first electrode electrically connected to the resistor, and a second electrode electrically connected to the resistor. The first electrode and the second electrode are spaced apart from each other in a lateral direction that is perpendicular to the thickness direction of the substrate.

A chip resistor with a reduced thickness is provided. The chip resistor includes an insulating substrate, a resistor embedded in the substrate, a first electrode electrically connected to the resistor, and a second electrode electrically connected to the resistor. The first electrode and the second electrode are spaced apart from each other in a lateral direction that is perpendicular to the thickness direction of the substrate.

A thermistor element includes: a thermistor film; a pair of first electrodes in contact with one surface of the thermistor film; an insulation film opposite to a contact side of the pair of first electrodes, the contact side on which the pair of first electrodes is in contact with the thermistor film; and at least one opening portion located in a region which overlaps each of the first electrodes when viewed in a plan view and passing through the insulation film. Each first electrode has a first portion located where each of the first electrodes and the opening portion overlap when viewed in a plan view and a second portion outside of where each of the first electrodes and the opening portion overlap when viewed in a plan view and is over the first portion and second portion to be in contact with the one surface of the thermistor film.

A resistor element includes a base substrate, a resistor layer disposed on one surface of the base substrate, a first electrode layer and a second electrode layer disposed on the resistor layer spaced apart from each other, a third electrode layer disposed between the first electrode layer and the second electrode layer to be spaced apart from the first electrode layer and the second electrode layer and being thicker than each of the first electrode layer and the second electrode layer, and first to third plating layers disposed on the first to third electrode layers, respectively.