A method of manufacturing an electronic component includes manufacturing a ceramic element including one pair of end surfaces and four side surfaces, forming external electrodes at both end portions of the ceramic element, measuring an initial characteristic value, determining any side surface to be machined among the four side surfaces and then determining, based on stored data, an amount of machining to be performed on the side surface to be machined, and machining, by the determined machining amount, the side surface of the ceramic element, which is determined to be machined, to be flush or substantially flush with the external electrodes.

The present invention provides a chip resistor and a method of making the same for alleviating stress resulted from thermal expansion difference and thus suppressing cracks. A chip resistor includes: a substrate, having a carrying surface and a mounting surface facing away from each other; a pair of upper electrodes, disposed at two ends of the carrying surface; a resistor, disposed on the carrying surface and between the pair of upper electrodes, and electrically connected to the pair of upper electrodes; a stress relaxation layer having flexibility and formed on the mounting surface of the substrate; a metal thin film layer, formed on a surface of the stress relaxation layer opposite to the substrate; a side electrode for electrically connecting the upper electrodes and the metal thin film layer; and a plating layer covering the side electrode and the metal thin film layer.

The present invention provides a chip resistor and a method of making the same for alleviating stress resulted from thermal expansion difference and thus suppressing cracks. A chip resistor includes: a substrate, having a carrying surface and a mounting surface facing away from each other; a pair of upper electrodes, disposed at two ends of the carrying surface; a resistor, disposed on the carrying surface and between the pair of upper electrodes, and electrically connected to the pair of upper electrodes; a stress relaxation layer having flexibility and formed on the mounting surface of the substrate; a metal thin film layer, formed on a surface of the stress relaxation layer opposite to the substrate; a side electrode for electrically connecting the upper electrodes and the metal thin film layer; and a plating layer covering the side electrode and the metal thin film layer.

An NTC thin film thermistor that includes at least a first thin film electrode, at least an NTC thin film, and at least a second thin film electrode. A further aspect relates to a method for producing an NTC thin film thermistor.

A resistor includes a resistive element including a first surface and a second surface facing opposite sides in a thickness direction; a protective film having electrical insulating properties disposed on the first surface; and a pair of electrodes disposed spaced apart from each other in a first direction perpendicular to the thickness direction, the pair of electrodes being configured to come into contact with the resistive element. The protective film includes a first outer edge and a second outer edge spaced apart from each other in the first direction and extending in a second direction perpendicular to both the thickness direction and the first direction. The resistive element includes a first slit and a second slit extending from the first surface through to the second surface and extending in the second direction. The first slit is located closest to the first outer edge; and the second slit is located closest to the second outer edge. As viewed in the thickness direction, a first distance from the first outer edge to the first slit and a second distance from the second outer edge to the second slit together have a length 15% or greater of a dimension of the protective film in the first direction.

A resistor includes a resistive element including a first surface and a second surface facing opposite sides in a thickness direction; a protective film having electrical insulating properties disposed on the first surface; and a pair of electrodes disposed spaced apart from each other in a first direction perpendicular to the thickness direction, the pair of electrodes being configured to come into contact with the resistive element. The protective film includes a first outer edge and a second outer edge spaced apart from each other in the first direction and extending in a second direction perpendicular to both the thickness direction and the first direction. The resistive element includes a first slit and a second slit extending from the first surface through to the second surface and extending in the second direction. The first slit is located closest to the first outer edge; and the second slit is located closest to the second outer edge. As viewed in the thickness direction, a first distance from the first outer edge to the first slit and a second distance from the second outer edge to the second slit together have a length 15% or greater of a dimension of the protective film in the first direction.

The invention relates to a production method for an electrical resistance element (for example a shunt) with the following steps: —providing a resistance alloy in powder form, and—forming the resistance element from the powdered resistance material. The invention also relates to a correspondingly produced resistance element.

A multilayer varistor according to the present disclosure includes: a sintered compact having, on a surface thereof, at least one planar portion and at least one corner portion; an internal electrode provided inside the sintered compact; a high-resistivity layer arranged to cover the at least one planar portion and the at least one corner portion of the sintered compact at least partially; and an external electrode arranged to cover the high-resistivity layer partially and electrically connected to the internal electrode. The high-resistivity layer includes: a first high-resistivity layer covering the at least one planar portion; and a second high-resistivity layer covering the at least one corner portion. The first high-resistivity layer has a larger average thickness than the second high-resistivity layer.

A multilayer varistor according to the present disclosure includes; a sintered compact; an internal electrode provided inside the sintered compact; a high-resistivity layer arranged to cover the sintered compact at least partially; and an external electrode arranged to cover the high-resistivity layer partially and electrically connected to the internal electrode. The high-resistivity layer includes a thinner region having a smaller thickness than a surrounding region that surrounds the thinner region.

A resistor includes a resistive element, an insulation plate, a protective film, and a pair of electrodes. The resistive element includes a first face and a second face arranged to face in opposite directions in a thickness direction. The insulation plate is on the first face, and the protective film on the second face. The electrodes are spaced apart in a first direction perpendicular to the thickness direction, and held in contact with the resistive element. Each electrode includes a bottom portion opposite to the insulation plate with respect to the resistive element in the thickness direction. Each bottom portion overlaps with a part of the protective film as viewed in the thickness direction. The resistor further includes a pair of intermediate layers spaced apart in the first direction. The intermediate layers are formed of a material electrically conductive and containing a synthetic resin. Each intermediate layer includes a cover portion covering a part of the protective film. The cover portion of each intermediate layer is disposed between the protective film and the bottom portion of one of the electrodes.