A multilayer chip varistor includes an element body, first and second external electrodes, and first and second electrical conductor groups. The first electrical conductor group includes a first internal electrode connected to the first external electrode, and a first intermediate electrical conductor opposed to the first internal electrode. The second electrical conductor group includes a second internal electrode including a first electrically conductive material and connected to the second external electrode, and a second intermediate electrical conductor opposed to the second internal electrode. At least one of the first and second intermediate electrical conductors includes the second electrically conductive material. The element body includes a low electrical resistance region between the first and second internal electrodes. The second electrically conductive material is diffused in the low electrical resistance region.

In some embodiments, a surface-mountable device can include an electrical element and a plurality of terminals connected to the electrical element. The surface-mountable device can further include a body configured to support the electrical element and the plurality of terminals. The body can have a rectangular cuboid shape with a length, a width, and a height that is greater than the width. The body can include a base plane configured to allow surface mounting of the device.

In some embodiments, a surface-mountable device can include an electrical element and a plurality of terminals connected to the electrical element. The surface-mountable device can further include a body configured to support the electrical element and the plurality of terminals. The body can have a rectangular cuboid shape with a length, a width, and a height that is greater than the width. The body can include a base plane configured to allow surface mounting of the device.

A manufacturing method of shunt resistor according to the present invention includes a step of calculating a difference between an initial resistance value and a desired resistance value as a resistance value to be adjusted, a step of providing a plurality of recess forming members capable of forming recesses each having a characteristic size in the surface of a resistive alloy plate, a recess determining step of determining the size and the number of the recesses necessary to be formed at the surface of the resistive alloy plate, and a recess forming step of forming the recesses according to the size and the number determined in the recess determining step by using the corresponding recess forming members.

A manufacturing method of shunt resistor according to the present invention includes a step of calculating a difference between an initial resistance value and a desired resistance value as a resistance value to be adjusted, a step of providing a plurality of recess forming members capable of forming recesses each having a characteristic size in the surface of a resistive alloy plate, a recess determining step of determining the size and the number of the recesses necessary to be formed at the surface of the resistive alloy plate, and a recess forming step of forming the recesses according to the size and the number determined in the recess determining step by using the corresponding recess forming members.

A multilayer varistor has a stack structure including a plurality of layers stacked in a third direction. The multilayer varistor includes a first internal electrode electrically connected to a first external electrode, a second internal electrode electrically connected to the second external electrode, and a third internal electrode electrically connected to the third external electrode. The first internal electrode is disposed between the second internal electrode and the third internal electrode in the third direction.

A multilayer varistor has a stack structure including a plurality of layers stacked in a third direction. The multilayer varistor includes a first internal electrode electrically connected to a first external electrode, a second internal electrode electrically connected to the second external electrode, and a third internal electrode electrically connected to the third external electrode. The first internal electrode is disposed between the second internal electrode and the third internal electrode in the third direction.

A terminal connecting structure is provided with each of the electrodes provided on the element forming the electronic component; and the terminals respectively having the connecting portions arranged along the electrodes respectively. In addition, the terminal connecting structure is provided with clearance forming portions configured to respectively form the respective clearances between the electrodes and the connecting portions respectively; and the connecting materials respectively provided in the clearances, the connecting material being configured to electrically connect the connecting portions and the electrodes respectively.

The present invention relates to a shunt resistor for current detection. The shunt resistor (1) includes: a resistance element (5) having a plate shape; and electrodes (6, 7) connected to both end surfaces (5a, 5b) of the resistance element (5), wherein the electrodes (6, 7) have cut portions (11, 12), respectively, the cut portions (11, 12) extending parallel to joint portions (8, 9) of the resistance element (5) and the electrodes (6, 7), and each of the cut portions (11, 12) is located at a position where a relationship Y≤0.80X-1.36 holds, where Y is a distance from each joint portion (6, 7) to each cut portion (11, 12), and X is a length of the joint portions (6, 7) in a width direction of the electrodes (6, 7).

A surface-mountable over-current protection device comprises at least one PTC material layer, a first conductive layer, a second conductive layer, a first electrode, a second electrode, an insulating layer, and a cover layer. The PTC material layer comprises crystalline polymer and conductive fillers dispersed therein. The first conductive layer and the second conductive layer are disposed on a first surface and a second surface of the PTC material layer, respectively. The first electrode and the second electrode are electrically connected to the first conductive layer and the second conductive layer, respectively. The insulating layer is disposed between the first electrode and the second electrode for insulation. The cover layer includes a fluorine-containing polymer, and wraps around an entire outer surface of the surface-mountable over-current protection device.