A resistor which is able to have a reduced thickness for an insulating substrate and in which occurrence of cracking is able to be suppressed during production of the insulating substrate, the production of the resistor and mounting of the substrate, and in which the safety of a medical device is increased by forming the insulating substrate using a biocompatible material; and a temperature sensor are provided. This resistor is provided with: an insulating substrate that has a bending strength of 690 MPa or more and a thickness of 10 to 100 m; a resistive film that is formed on the insulating substrate; at least a pair of electrode layers, that are electrically connected to the resistive film; and a protective film that covers a region where the resistive film is formed, while forming exposure portions so that at least parts of the electrode layers are exposed therein.

There is provided a temperature sensor element including a pair of electrodes and a temperature-sensitive film disposed in contact with the pair of electrodes, in which the temperature-sensitive film includes a matrix resin and a plurality of conductive domains contained in the matrix resin, the conductive domains include a conjugated polymer and a dopant, and the number of structural units constituting the conjugated polymer is 65 or less.

In an embodiment a sensor element includes at least one carrier layer having a top side and an underside, at least one functional layer arranged at the top side of the carrier layer and comprising a material having a temperature-dependent electrical resistance and at least one top electrode configured for electrically contacting the functional layer from a top side of the functional layer, wherein the top electrode is arranged directly on the functional layer, wherein the top electrode forms the top side of the sensor element, and wherein the sensor element is configured to be integrated as a discrete component directly into an electrical system.

An electronic component includes a ceramic body, and an external electrode on the ceramic body, the external electrode includes a base layer continuously covering an end surface of the ceramic body and a portion of a side surface bordering the end surface, and a plating layer covering the base layer, the ceramic body includes a recess open on the side surface, an opening of the recess includes a pair of edges, one edge of the opening is located within a covered region on the side surface covered with the base layer, and the other edge of the opening is spaced away from the covered region.

A thermistor layer of the present invention is configured to be disposed in an electrical current path. The thermistor layer comprises a thermosensitive particle, a plurality of electro-conductive particles covering a surface of the thermosensitive particle, and a binder adhering the electro-conductive particles, the electro-conductive particles form an electro-conductive network, at least the surface of the thermosensitive particle is made of a thermoplastic resin, the thermoplastic resin softens at a temperature lower than a temperature at which the binder softens, and the thermistor layer is provided to become highly resistive due to softening and deformation of the thermoplastic resin.

A structure includes a negative temperature coefficient (NTC) resistor for use in gallium nitride (GaN) technology. The NTC resistor includes a p-type doped GaN (pGaN) layer, and a gallium nitride (GaN) heterojunction structure under the pGaN layer. The GaN heterojunction structure includes a barrier layer and a channel layer. An isolation region extends across an interface of the barrier layer and the channel layer, and a first metal electrode is on the pGaN layer spaced from a second metal electrode on the pGaN layer. The NTC resistor can be used as a temperature compensated reference in a structure providing a temperature detection circuit. The temperature detection circuit includes an enhancement mode HEMT sharing parts with the NTC resistor and includes temperature independent current sources including depletion mode HEMTs.

In an embodiment, a component includes a first electrode and a second electrode arranged one above the other in a stacking direction, wherein the first electrode and the second electrode overlap in a first overlap region, wherein the first electrode has, in a first region containing the first overlap region, an extent in a first direction perpendicular to the stacking direction that is greater than an extent of the second electrode in the first direction in the first region, and wherein the first electrode has, in the first region containing the first overlap region, an extent in a second direction perpendicular to the stacking direction and to the first direction that is greater than an extent of the second electrode in the second direction in the first region, and a third electrode arranged in the same plane as the second electrode, wherein the first electrode is a floating electrode, wherein the first electrode and the third electrode overlap in a second overlap region, wherein the first electrode has, in a second region that contains the second overlap region, extents in the first direction and in the second direction that are greater than the extents of the third electrode in the first and the second direction in the second region, and wherein the first electrode has, in a connecting region that connects the first region and the second region, an extent in the first direction that is smaller than the extent of the first electrode in the first region and smaller than the extent of the first electrode in the second region.

An electronic component that includes: a base body having an outer surface defining a recess with an inner surface, wherein, when the recess is viewed in a direction orthogonal to the outer surface, at least a part of an outer edge of the recess is curved, and when the recess is viewed in a section orthogonal to the outer surface, at least a part of the inner surface of the recess is curved; a wiring inside the base body; and a glass film covering the outer surface of the base body and not covering the inner surface of the recess.

A hybrid device, comprising: a first electrode, disposed on a first side of the hybrid device, a second electrode, disposed on a second side of the hybrid device, opposite the first side. The hybrid device may further include at least one layer, disposed between the first electrode and the second electrode, the at least one layer comprising a negative temperature coefficient material and a plurality of conductive particles, wherein the hybrid device exhibits a positive temperature coefficient characteristic and a negative temperature coefficient characteristic.

A multi-layered component and a method for producing a multi-layered component are disclosed. In an embodiment a multi-layered component includes an inert ceramic substrate and at least one functional ceramic, wherein the functional ceramic is completely enclosed by the ceramic substrate.