A sensor device includes a detection resistor having a resistance value changing according to a physical quantity and a reference resistor compared with the detection resistor, the reference resistor is configured by electrically connecting a first resistance circuit and a second resistance circuit. The first resistance circuit includes a first and a second resistive element having positive and negative resistance temperature coefficients, respectively, which are electrically connected. The second resistance circuit includes a third and a fourth resistive elements having a positive and a negative resistance temperature coefficient, respectively, which are electrically connected. The first resistance circuit is configured to generate a first deviation to either the positive or negative side with respect to a temperature change, and the second resistance circuit is configured to generate a second deviation to the side opposite to the positive or negative side where the first deviation is generated.

In an embodiment a sensor element includes at least one carrier layer having a top side and an underside and at least one functional layer, wherein the functional layer is arranged at the top side of the carrier layer and includes a material having a temperature-dependent electrical resistance, wherein the sensor element is configured to be integrated as a discrete component directly into an electrical system, and wherein the sensor element is configured to measure a temperature.

A ceramic electronic component that includes a ceramic element, and a coating film and external electrodes that are provided on the surface of the ceramic element. The coating film is selectively formed on the surface of the ceramic element by applying, to the ceramic electronic component, a resin-containing solution containing at least one anion of a sulfuric acid, a sulfonic acid, a carboxylic acid, a phosphoric acid, a phosphoric acid, and a hydrofluoric acid.

An electronic component includes an element body, a thin film layer disposed to cover a pair of end surfaces and four side surfaces, a first external electrode and a second external electrode, and internal conductors, wherein each of the first external electrode and the second external electrode has first electrode layers disposed on the thin film layer and electrically connected to the internal conductors, and second electrode layers disposed to cover the first electrode layers, and a thermal conductivity of the second electrode layers is lower than a thermal conductivity of the first electrode layers.

A component having an active volume, the active volume not being centrally positioned along a height of the component, and/or not being centrally positioned along a width of the component. Use of the component is also disclosed. Further aspects relate to a use of the component and to a component. The component can be an NTC thermistor or a PTC thermistor or a temperature measurement element. Use of the component for monitoring a temperature of a battery or in a vehicle is also disclosed.

A thermistor sintered body has a thickness in a range of 1 ?m to 100 ?m and an area in a range of 1 mm.sup.2 to 10 mm.sup.2, and is composed of a single body of a sintered body having a composition of NiMn.sub.2O.sub.4. This thermistor sintered body can be manufactured by a first step of dropping a raw material liquid RL onto a surface of a substrate rotatably supported, a second step of rotating the substrate with the dropped raw material liquid RL and spreading the raw material liquid RL, a third step of forming a sintered body having the composition of NiMn.sub.2O.sub.4 on the surface of the substrate by heating and holding the raw material liquid RL and the substrate on which the raw material liquid RL has been placed, and a fourth step of separating the sintered body from the substrate.

A resistor which is able to have a reduced thickness for an insulating substrate and in which occurrence of cracking is able to be suppressed during production of the insulating substrate, the production of the resistor and mounting of the substrate, and in which the safety of a medical device is increased by forming the insulating substrate using a biocompatible material; and a temperature sensor are provided. This resistor is provided with: an insulating substrate that has a bending strength of 690 MPa or more and a thickness of 10 to 100 m; a resistive film that is formed on the insulating substrate; at least a pair of electrode layers, that are electrically connected to the resistive film; and a protective film that covers a region where the resistive film is formed, while forming exposure portions so that at least parts of the electrode layers are exposed therein.

A hybrid device, comprising: a first electrode, disposed on a first side of the hybrid device, a second electrode, disposed on a second side of the hybrid device, opposite the first side. The hybrid device may further include at least one layer, disposed between the first electrode and the second electrode, the at least one layer comprising a negative temperature coefficient material and a plurality of conductive particles, wherein the hybrid device exhibits a positive temperature coefficient characteristic and a negative temperature coefficient characteristic.

Provided is a thin-film resistor that has a higher resistance value than the conventional thin-film resistors while retaining excellent TCR characteristics. The thin-film resistor includes a substrate, a pair of electrodes formed on the substrate, and a resistive film connected to the pair of electrodes. The resistive film includes a first resistive film and a second resistive film, the second resistive film having a different TCR from that of the first resistive film, and each of the first resistive film and the second resistive film contains Si, Cr, and N as the main components.

An electronic component that includes: a base body; a glass film covering at least a part of an outer surface of the base body; and an underlayer electrode covering a part of a surface of the glass film, wherein the base body contains a Mn oxide, the underlayer electrode contains a conductive metal and a glass component, the base body has a reaction layer containing a composite oxide of Mn and the conductive metal at an end portion of the underlayer electrode, and the reaction layer has a void.