A resin composition which includes (A) an epoxy resin, (B) a curing agent, and (C) carbon nanotubes, wherein the carbon nanotubes contain therein semiconducting single-walled carbon nanotubes in an amount of 70% by weight or more. A cured product of a paste made from the resin composition can be used to form a varistor element.

A resin composition which includes (A) an epoxy resin, (B) a curing agent, and (C) carbon nanotubes, wherein the carbon nanotubes contain therein semiconducting single-walled carbon nanotubes in an amount of 70% by weight or more. A cured product of a paste made from the resin composition can be used to form a varistor element.

A transient voltage protection device includes: an element body; a cavity portion provided in the element body; a pair of internal electrodes disposed in the element body; and a pair of external electrodes connected to the pair of internal electrodes. The pair of internal electrodes extend along a first direction and face each other in a second direction intersecting the first direction. The cavity portion includes a gap region located between the pair of internal electrodes in the second direction. A tip portion of at least one of the pair of internal electrodes is in contact with only the element body.

A resin composition which includes (A) an epoxy resin, (B) a curing agent, and (C) carbon nanotubes, wherein the carbon nanotubes contain therein semiconducting single-walled carbon nanotubes in an amount of 70% by weight or more. A cured product of a paste made from the resin composition can be used to form a varistor element.

A resin composition which includes (A) an epoxy resin, (B) a curing agent, and (C) carbon nanotubes, wherein the carbon nanotubes contain therein semiconducting single-walled carbon nanotubes in an amount of 70% by weight or more. A cured product of a paste made from the resin composition can be used to form a varistor element.

The present disclosure specifies a varistor comprising a ceramic body, which comprises a functional ceramic, and electrodes arranged inside the ceramic body. The electrodes include non-floating electrodes, which are electrically connected to external contacts of the varistor, respectively. The electrodes include at least three floating electrodes, which are electrically isolated with respect to the external contacts. At least two floating electrodes are arranged in the same layer, and each of the floating electrodes overlaps with at least two further electrodes. At least two floating electrodes overlap with one of the non-floating electrodes, respectively. A distance (D1) is defined along a longitudinal axis of the ceramic body between two of the electrodes overlapping with a first floating electrodes, and a distance (D2) is defined perpendicular to the longitudinal axis between the first floating electrode and one of the overlapping electrodes. The distance (D1) is at least twice the distance (D2).

A varistor device for voltage-surge-protecting an electronic circuit at a cryogenic temperature comprises an electric lead composed of a superinsulator material, and electrical contact elements. The electrical contact elements are for connecting different positions along the electric lead to the electronic circuit. The electrical contact elements are in electric contact with the electric lead at the different positions along the electric lead. The electric lead is adapted to provide a superinsulating state or a cooper-pair insulating state at the cryogenic temperature, and to provide a non-linear resistance between the different positions at the cryogenic temperature.

A multilayer varistor has a stack structure including a plurality of layers stacked in a third direction. The multilayer varistor includes a first internal electrode electrically connected to a first external electrode, a second internal electrode electrically connected to the second external electrode, and a third internal electrode electrically connected to the third external electrode. The first internal electrode is disposed between the second internal electrode and the third internal electrode in the third direction.

A multilayer varistor has a stack structure including a plurality of layers stacked in a third direction. The multilayer varistor includes a first internal electrode electrically connected to a first external electrode, a second internal electrode electrically connected to the second external electrode, and a third internal electrode electrically connected to the third external electrode. The first internal electrode is disposed between the second internal electrode and the third internal electrode in the third direction.

Provided is a resin material having non-ohmic properties which has favorable characteristics as a varistor and has a high degree of molding freedom and impact resistance. A resin material 10 comprises: an insulating matrix 11 made of a first resin material; an island-form conductive dispersed phase 12 made of a conductive second resin material which is incompatible with the first resin material and is more wettable to a microvaristor 13 described later than the first resin material is, wherein the island-form conductive dispersed phase is dispersed in an island form in the matrix and has a volume ratio of less than 16% in the whole resin material; and a microvaristor 13 comprising ceramic particles having non-ohmic properties, wherein the ceramic particles are dispersed in the matrix 11 and electrically contacted with each other via the island-form conductive dispersed phase 12.