An electronic smoking article, a method of manufacturing an electronic smoking article, and a method of achieving a smoking experience without combusting tobacco are disclosed. The electronic smoking article includes an authenticated first section, which includes an aerosol generation unit having at least one heater; an authenticated second section, which includes a power supply operable to apply voltage to the at least one heater for heating a liquid in at least a portion of the aerosol generation unit to form an aerosol; and a conductive ink circuit embedded within the first and second sections, and wherein the power supply and the aerosol generation unit are electrically connected upon joining the first and second sections, and wherein each of the first and second sections has a portion of the conductive ink circuit.

An electronic smoking article, a method of manufacturing an electronic smoking article, and a method of achieving a smoking experience without combusting tobacco are disclosed. The electronic smoking article includes an authenticated first section, which includes an aerosol generation unit having at least one heater; an authenticated second section, which includes a power supply operable to apply voltage to the at least one heater for heating a liquid in at least a portion of the aerosol generation unit to form an aerosol; and a conductive ink circuit embedded within the first and second sections, and wherein the power supply and the aerosol generation unit are electrically connected upon joining the first and second sections, and wherein each of the first and second sections has a portion of the conductive ink circuit.

The present disclosure relates to semiconductor structures and, more particularly, to heat dissipating structures and methods of manufacture. The structure includes: a thin film resistor within a back end of the line structure; and a heat dissipating structure below the thin film resistor, the heat dissipating structure includes a top plate with a slotted configuration and being within the back end of the line structure.

The present disclosure relates to semiconductor structures and, more particularly, to heat dissipating structures and methods of manufacture. The structure includes: a thin film resistor within a back end of the line structure; and a heat dissipating structure below the thin film resistor, the heat dissipating structure includes a top plate with a slotted configuration and being within the back end of the line structure.

An integrated circuit contains a thin film resistor in which a body of the thin film resistor is disposed over a lower dielectric layer in a system of interconnects in the integrated circuit. Heads of the thin film resistor are disposed over electrodes which are interconnect elements in the lower dielectric layer, which provide electrical connections to a bottom surface of the thin film resistor. Top surfaces of the electrodes are substantially coplanar with a top surface of the lower dielectric layer. A top surface of the thin film resistor is free of electrical connections. An upper dielectric layer is disposed over the thin film resistor.

An integrated circuit includes a thin film resistor body that is formed over a dielectric layer. An interfacial layer is formed on the thin film resistor body and resistor heads are formed on the interfacial layer. The thin film resistor body includes nickel chromium aluminum (NiCrAl) and the resistor heads include titanium tungsten (TiW).

A damascene method for manufacturing a thin film resistor (TFR) module is provided. A pair of heads are formed spaced apart from each other. A dielectric region is deposited over the pair of heads, and an opening extending over both heads is formed in the dielectric region. A TFR layer is deposited over the dielectric region and extending into the opening to define a cup-shaped TFR layer structure including (a) a laterally-extending TFR element base conductively connected to both heads and (b) vertical ridges extending upwardly from the laterally-extending TFR element base. A high density plasma (HDP) ridge removal process is performed to remove or shorten the vertical ridges from the cup-shaped TFR layer structure, thereby defining a TFR element having removed or shorted vertical ridges. The removal or shortening of the vertical ridges may improve the temperature coefficient of resistance (TCR) characteristic of the TFR element.

Described herein is a composite panel that includes a first layer made from an electrically non-conductive material. The composite panel also includes a resistance heater printed onto the first layer. Further, the composite panel includes a second layer adjacent the resistance heater, the resistance heater being positioned between the first layer and the second layer. The second layer is made from an electrically non-conductive material.

Described herein is a composite panel that includes a first layer made from an electrically non-conductive material. The composite panel also includes a resistance heater printed onto the first layer. Further, the composite panel includes a second layer adjacent the resistance heater, the resistance heater being positioned between the first layer and the second layer. The second layer is made from an electrically non-conductive material.

A thin film resistor formed using thermal spraying techniques in the manufacturing process is provided. A thin film resistor and method of manufacturing a thin film resistor are disclosed including a thermally sprayed resistive element. An alloy bond layer may be applied to a substrate and a thermally sprayed resistive layer is applied to the alloy bond layer by a thermal spraying process to form a thermally sprayed resistive element. The alloy bond layer and the thermally sprayed resistive layer may have the same chemical composition.