Patent classifications
H01C17/075
RESISTORS FOR INTEGRATED CIRCUITS
A thin-film integrated circuit comprising a first semiconductor device, a second semiconductor device, a first resistor, and a second resistor is provided. A semiconducting region of the first semiconductor device, a resistor body of the first resistor, a semiconducting region of the second semiconductor device, and a resistor body of the second resistor are formed from at least one of a first source material and a second source material, and a material of the resistor body of the first resistor and a material of the resistor body of the second resistor have different electrical properties.
THIN-FILM COMPONENTS FOR INTEGRATED CIRCUITS
A thin-film electronic component includes a first terminal, a second terminal, and a first current path between the first terminal and the second terminal, wherein the first current path is formed from a first segment of a first material and a first segment of a second material arranged in series between the first terminal and the second terminal.
Sensor Element and Method for Producing a Sensor Element
In an embodiment a sensor element includes at least one carrier layer having a top side and an underside and at least one functional layer, wherein the functional layer is arranged at the top side of the carrier layer and includes a material having a temperature-dependent electrical resistance, wherein the sensor element is configured to be integrated as a discrete component directly into an electrical system, and wherein the sensor element is configured to measure a temperature.
Sensor Element and Method for Producing a Sensor Element
In an embodiment a sensor element includes at least one carrier layer having a top side and an underside and at least one functional layer, wherein the functional layer is arranged at the top side of the carrier layer and includes a material having a temperature-dependent electrical resistance, wherein the sensor element is configured to be integrated as a discrete component directly into an electrical system, and wherein the sensor element is configured to measure a temperature.
Icemaker with thermoformed ice tray providing heating and phase change sensing
An icemaker employs a thermoformed ice tray that may have preprinted conductors providing for heating elements in capacitive sensing. Capacitive sensing may be used to control a water fill level and/or to detect complete freezing of the ice cubes and/or to detect complete ejection of the ice cubes.
Icemaker with thermoformed ice tray providing heating and phase change sensing
An icemaker employs a thermoformed ice tray that may have preprinted conductors providing for heating elements in capacitive sensing. Capacitive sensing may be used to control a water fill level and/or to detect complete freezing of the ice cubes and/or to detect complete ejection of the ice cubes.
THIN FILM RESISTOR (TFR) DEVICE STRUCTURE FOR HIGH PERFORMANCE RADIO FREQUENCY (RF) FILTER DESIGN
An integrated circuit (IC) includes a substrate and a thin film resistor (TFR) device structure. The TFR device structure includes a first portion of a first metallization layer and a second portion of the first metallization layer on the substrate. The TFR device structure also includes a first portion of a dielectric layer on the first portion of the first metallization layer and a second portion of the dielectric layer on the second portion of the first metallization layer. The TFR device structure further includes a first portion of a second metallization layer on the first portion of the dielectric layer and a second portion of the second metallization layer on the second portion of the dielectric layer. The TFR device structure also includes a first portion of a third metallization layer coupling the first portion of the second metallization layer to the second portion of the second metallization layer.
THIN FILM RESISTOR (TFR) DEVICE STRUCTURE FOR HIGH PERFORMANCE RADIO FREQUENCY (RF) FILTER DESIGN
An integrated circuit (IC) includes a substrate and a thin film resistor (TFR) device structure. The TFR device structure includes a first portion of a first metallization layer and a second portion of the first metallization layer on the substrate. The TFR device structure also includes a first portion of a dielectric layer on the first portion of the first metallization layer and a second portion of the dielectric layer on the second portion of the first metallization layer. The TFR device structure further includes a first portion of a second metallization layer on the first portion of the dielectric layer and a second portion of the second metallization layer on the second portion of the dielectric layer. The TFR device structure also includes a first portion of a third metallization layer coupling the first portion of the second metallization layer to the second portion of the second metallization layer.
ULTRATHIN AND FLEXIBLE DEVICES INCLUDING CIRCUIT DIES
Ultrathin and flexible electrical devices including circuit dies such as, for example, a capacitor chip, a resistor chip, and/or an inductor chip, and methods of making and using the same are provided. Circuit dies are attached to a major surface of a flexible substrate having channels Electrically conductive traces are formed in the channels, self-aligned with the circuit dies, and in direct contact with the bottom surface of the circuit dies.
ULTRATHIN AND FLEXIBLE DEVICES INCLUDING CIRCUIT DIES
Ultrathin and flexible electrical devices including circuit dies such as, for example, a capacitor chip, a resistor chip, and/or an inductor chip, and methods of making and using the same are provided. Circuit dies are attached to a major surface of a flexible substrate having channels Electrically conductive traces are formed in the channels, self-aligned with the circuit dies, and in direct contact with the bottom surface of the circuit dies.