Methods and apparatus providing a vertically constructed, temperature sensing resistor are disclosed. An example apparatus includes a semiconductor substrate including a plurality of resistor unit cells arranged in an array, each resistor unit cell formed within the semiconductor substrate and including a top contact. A conductive layer located over the semiconductor substrate electrically connects to a subset of the top contacts.

A resistor manufacturing method includes a first step of applying a solution wherein conductive nanosized particles with a particle diameter of less than 1 m and an insulating material are at least dispersed, or a solution wherein the conductive nanosized particles covered with an insulating material layer are at least dispersed, in a desired form on a substrate surface, thereby forming a film. The resistor manufacturing method also includes a second step of irradiating one portion of the film with light in a predetermined pattern, and sintering the conductive nanosized particles with the light, thereby forming a resistive film that is a conductive particle layer of the predetermined pattern.

A resistor manufacturing method includes a first step of applying a solution wherein conductive nanosized particles with a particle diameter of less than 1 m and an insulating material are at least dispersed, or a solution wherein the conductive nanosized particles covered with an insulating material layer are at least dispersed, in a desired form on a substrate surface, thereby forming a film. The resistor manufacturing method also includes a second step of irradiating one portion of the film with light in a predetermined pattern, and sintering the conductive nanosized particles with the light, thereby forming a resistive film that is a conductive particle layer of the predetermined pattern.

Methods and apparatus providing a vertically constructed, temperature sensing resistor are disclosed. An example apparatus includes a semiconductor substrate including a first doped region, a second doped region, and a third doped region between the first and second doped regions, the third doped region including a temperature sensitive semiconductor material; a first contact coupled to the first doped region; a second contact opposite the first contact coupled to the second doped region; and an isolation trench to circumscribe the third doped region.

A resistor element includes a base substrate having first and second surfaces opposing each other and first and second end surfaces opposing each other and connecting the first and second surfaces. A first resistor layer is on the first surface of the base substrate. First and second terminals are respectively on the first and second end surfaces. A second resistor layer is on the first resistor layer, is connected to the first and second terminals, and includes a copper-manganese-tin (CuMnSn)-based composition.

A resistor element includes a base substrate having first and second surfaces opposing each other and first and second end surfaces opposing each other and connecting the first and second surfaces. A first resistor layer is on the first surface of the base substrate. First and second terminals are respectively on the first and second end surfaces. A second resistor layer is on the first resistor layer, is connected to the first and second terminals, and includes a copper-manganese-tin (CuMnSn)-based composition.

A resistor includes a resistive element, a protective film, and a pair of electrodes. The resistive element is made of a metal plate. The protective film is formed on the upper surface of the resistive element. The plated layers are formed to cover the electrodes. The electrodes are separated from each other with the protective film therebetween and are formed at both ends of the upper surface of the resistive element. The electrodes are formed by printing metal-containing paste.

A resistor includes a resistive element, a protective film, and a pair of electrodes. The resistive element is made of a metal plate. The protective film is formed on the upper surface of the resistive element. The plated layers are formed to cover the electrodes. The electrodes are separated from each other with the protective film therebetween and are formed at both ends of the upper surface of the resistive element. The electrodes are formed by printing metal-containing paste.

The invention concerns a resistor, in particular a low-resistance current measuring resistor, having two connecting parts made of a conductor material and a resistor element made of a resistance material inserted between the connecting parts, the resistance material having a specific thermal force which generates a specific thermoelectric voltage in the event of a temperature difference between the resistor element on the one hand and the connecting parts on the other hand. The invention additionally provides for a compensating element which in operation generates a thermoelectric voltage which at least partially compensates for the thermoelectric voltage generated by the resistor element. Furthermore, the invention includes a corresponding manufacturing process.

The invention concerns a resistor, in particular a low-resistance current measuring resistor, having two connecting parts made of a conductor material and a resistor element made of a resistance material inserted between the connecting parts, the resistance material having a specific thermal force which generates a specific thermoelectric voltage in the event of a temperature difference between the resistor element on the one hand and the connecting parts on the other hand. The invention additionally provides for a compensating element which in operation generates a thermoelectric voltage which at least partially compensates for the thermoelectric voltage generated by the resistor element. Furthermore, the invention includes a corresponding manufacturing process.