Patent classifications
H01C17/281
RESISTOR COMPONENT
A resistor component includes an insulating substrate having one surface and the other surface and one end surface and the other end surface, a slit portion disposed on the one end surface and the other end surface and extending to the one surface and the other surface, a resistor layer disposed on the one surface, and a first terminal and a second terminal connected to the resistor layer. The first and second terminals include: an internal electrode layer including an upper electrode disposed on the one surface, a lower electrode disposed on the other surface, and a slit electrode disposed on an internal wall of the slit portion, and an external electrode layer disposed on the one end surface, the other end surface, and the internal wall of the slit portion, being in contact with the slit electrode, having a thickness less than a thickness of the internal electrode layer.
CHIP RESISTOR, METHOD OF PRODUCING CHIP RESISITOR AND CHIP RESISTOR PACKAGING STRUCTURE
[Object] A method for efficiently manufacturing chip resistors is provided.
[Means] The method includes the steps of preparing at least three conductive elongated boards 711 made of an electrically conductive material and a resistive member 702 made of a resistive material, arranging the at least three conductive elongated boards 711 apart from each other along a width direction crossing a longitudinal direction in which one of the at least three conductive elongated boards 711 is elongated, forming a resistor aggregate 703 by bonding the resistive member 702 to the at least three conductive elongated boards 711, and collectively dividing the resistor aggregate 703 into a plurality of chip resistors by punching so that each of the chip resistors includes two electrodes and a resistor portion bonded to the two electrodes.
Thermistor element and method for manufacturing same
In a thermistor element, a thermistor body formed of a thermistor material, a conductive interlayer formed on the thermistor body, and an electrode layer formed on the conductive interlayer are provided, the conductive interlayer is formed along protrusions and recesses on a surface of the thermistor body, the conductive interlayer is a layer in which RuO.sub.2 grains in contact with each other are uniformly distributed and SiO.sub.2 interposes in gaps between the RuO.sub.2 grains, and the conductive interlayer is formed in a state of adhering to the thermistor body along the protrusions and the recesses on the surface of the thermistor body.
FIRST-STAGE CERAMIC COLLECTIVE BOARD, SECOND-STAGE CERAMIC COLLECTIVE BOARD, MANUFACTURING METHOD FOR SECOND-STAGE CERAMIC COLLECTIVE BOARD, AND MANUFACTURING METHOD FOR MULTILAYER ELECTRONIC COMPONENT
Even with the occurrence of misalignment of inner electrodes in a ceramic collective board, a multilayer electronic component is made in which inner electrodes are disposed at suitable positions. Disclosed herein are descriptions of a first-stage ceramic collective board and a second-stage ceramic collective board used for manufacturing a multilayer electronic component. The present disclosure further describes a manufacturing method for the second-stage ceramic collective board and a manufacturing method for a multilayer electronic component.
THERMISTOR AND METHOD FOR MANUFACTURING THERMISTOR
A thermistor includes a thermistor element, a protective film formed on the surface of the thermistor element, and electrode portions formed on both end portions of the thermistor element, in which the protective film is formed of silicon oxide, and, as a result of observing a bonding interface between the thermistor element and the protective film, a ratio L/L.sub.0 of a length L of an observed peeled portion to a length L.sub.0 of the bonding interface in an observation field is 0.16 or less.
THERMISTOR WITH PROTECTIVE FILM AND MANUFACTURING METHOD THEREOF
A thermistor has a thermistor element, a protective film, and an electrode portion. The protective film is formed of a SiO.sub.2 film having a film thickness in a range of 50 nm or more and 1000 nm or less. The protective film is formed in contact with the thermistor element. Alkali metal is unevenly distributed in a region including an interface between the thermistor element and the protective film.
Resistor component
A resistor component includes an insulating substrate having one surface and the other surface and one end surface and the other end surface, a slit portion disposed on the one end surface and the other end surface and extending to the one surface and the other surface, a resistor layer disposed on the one surface, and a first terminal and a second terminal connected to the resistor layer. The first and second terminals include: an internal electrode layer including an upper electrode disposed on the one surface, a lower electrode disposed on the other surface, and a slit electrode disposed on an internal wall of the slit portion, and an external electrode layer disposed on the one end surface, the other end surface, and the internal wall of the slit portion, being in contact with the slit electrode, having a thickness less than a thickness of the internal electrode layer.
METHOD FOR MANUFACTURING HIGH-SENSITIVITY PIEZORESISTIVE SENSOR USING MULTI-LEVEL STRUCTURE DESIGN
The present invention discloses a method for manufacturing a high-sensitivity piezoresistive sensor using a multi-level structure design, including the following steps: forming first-level basic geometrical units formed of basic structural units on a substrate, where each first-level basic geometrical unit is a two-dimensional or three-dimensional network structure formed by stacking several basic structural units; stacking and combining several first-level basic geometrical units in an array to form a second-level geometrical structure, and forming a contact connection area located between adjacent first-level basic geometrical units; and dispensing a conductive adhesive in at least two positions on the substrate to form electrodes of a piezoresistive sensor, so as to obtain the piezoresistive sensor. A high-sensitivity piezoresistive sensor obtained by using the method of the present invention has flexible design and simple fabrication, can be desirably combined with various existing sensor fabrication methods, and has general applicability.
METHOD FOR FASTENING A CONTACT ELEMENT IN AN ELECTRICAL COMPONENT, AND ELECTRICAL COMPONENT HAVING A CONTACT ELEMENT
In a method for fastening a contact element (5, 6) in an electrical component (1), a contact element (5, 6) is arranged on a contact surface (3, 4) of a base body (2) of the component (1) and a laser beam (18) is directed onto a region (16, 17) of the contact element (5, 6) in such a way that the base body (2) is not located in the beam direction (24) of the laser beam (18). The contact element (5, 6) is partially melted by the laser beam (18), so that the molten material (7, 8) wets the contact surface (3, 4) and produces fastening of the contact element (5, 6) on the contact surface (3, 4).
Method for manufacturing resistor, and resistor
The present disclosure provides a method for manufacturing a resistor. The method may include providing a resistor structure having a layer of first thermally conductive material covering at least a surface of the resistive body, the first thermally conductive material being semi-cured, semi-hardened and substantially non-fluid, and the layer of first thermally conductive material having a first thickness; bending a pair of electrodes at the opposite ends of the resistive body toward a surface of the layer of first thermally conductive material; and pressing the pair of electrodes against the surface of the layer of first thermally conductive material, while maintaining in a heated state the first thermally conductive material to cause further curing and hardening of the first thermally conductive material and a reduction in the first thickness, so as to obtain a cured and hardened thermally conductive layer having a desired second thickness.