An electronic component and a manufacturing method thereof are disclosed. An electronic component includes a substrate, a conductor pattern portion disposed on the substrate, a first electrode pattern and a second electrode pattern disposed on the conductor pattern portion, and at least one dummy electrode pattern disposed to be spaced apart from the first electrode pattern and the second electrode pattern and disposed on the substrate. A width of the first electrode pattern is substantially the same as a width of a portion of the conductor pattern portion in contact with the first electrode pattern, and a width of the second electrode pattern is substantially the same as a width of a portion of the conductor pattern portion in contact with the second electrode pattern.

A thermistor element includes an element body made of ceramic and including first and second end surfaces opposite to each other and a peripheral surface located between the first end surface and the second end surface, first and second external electrodes respectively covering the first and second end surfaces and portion of the peripheral surface adjacent to the respective first and second end surfaces. The first and second external electrodes include electrode layers including an underlayer and a metal plating layer, the underlayer of the first external electrode includes, adjacent to or in a vicinity of the second external electrode, two second external electrode side corner portions that are thin and adjacent to each other, and the underlayer of the second external electrode includes, adjacent to or in a vicinity of the first external electrode, two first external electrode side corner portions that are thin and adjacent to each other.

A method includes blending a dielectric material including a titanate with a carbon-based ink to form a modified carbon-based ink. The method also includes printing the modified carbon-based ink onto a structure. The method further includes curing the printed modified carbon-based ink on the structure at a temperature that does not exceed about 250 C. In addition, the method includes processing the cured printed modified carbon-based ink to form a thick film resistor. Blending the dielectric material with the carbon-based ink causes the modified carbon-based ink to have a resistivity that is at least double a resistivity of the carbon-based ink.

A MOV device including a MOV chip, a first base metal electrode disposed on a first side of the MOV chip, and a second base metal electrode disposed on a second side of the MOV chip opposite the first side, each of the first base metal electrode and the second base metal electrode including a first base metal electrode layer disposed on a surface of the MOV chip and formed of one of silver, copper, and aluminum, the first base metal electrode layer having a thickness in a range of 2-200 micrometers, and a second base metal electrode layer disposed on a surface of the first base metal electrode layer and formed of one of silver, copper, and aluminum, the second base metal electrode layer having a thickness in a range of 2-200 micrometers.

A method includes blending a dielectric material including a titanate with a carbon-based ink to form a modified carbon-based ink. The method also includes printing the modified carbon-based ink onto a structure. The method further includes curing the printed modified carbon-based ink on the structure at a temperature that does not exceed about 250 C. In addition, the method includes processing the cured printed modified carbon-based ink to form a thick film resistor. An amount of the dielectric material blended with the carbon-based ink does not exceed about 15% by weight of the modified carbon-based ink. The modified carbon-based ink has a resistivity that is at least double a resistivity of the carbon-based ink. The thick film resistor may be configured to handle up to about 200 mA of current without fusing and/or handle up to about 1.0 W of power without fusing.

A chip resistor having a predetermined resistance value is manufactured by the following method. A resistive element is provided on an upper surface of an insulating substrate. The resistive element includes a wide portion, a first narrow portion extending from the wide portion, and a part extending from the wide portion, the first narrow portion has a smaller width than the wide portion. First and second electrodes are provided on the upper surface of the insulating substrate. The first electrode is located away from the wide portion. The first electrode contacts the first narrow portion. The first electrode overlaps the first narrow portion when viewed from above. The second electrode contacts the part of the resistive element. The second electrode overlaps the part of the resistive element when viewed from above. A distance between the narrow portion and the wide portion is determined so as to cause a resistance value between the first and second electrodes to be the predetermined resistance value. This method improves the precision of the resistance value of the chip resistor.

A circuit protection device including a primary fuse, and a positive temperature coefficient (PTC) device and a secondary fuse electrically connected in series with one another and in parallel with the primary fuse, the secondary fuse formed of a quantity of solder disposed on a dielectric surface, wherein the dielectric surface exhibits a de-wetting characteristic relative to the solder such that, when the solder is melted, the solder draws away from the dielectric surface to create a galvanic opening.

Provided are a thermistor which can have a satisfactory thermistor film using a metal substrate as well as a high humidity resistance and heat resistance; a method for producing the same; and a thermistor sensor. The thermistor according to the present invention includes a metal substrate 2, an insulating base film 3 formed on the metal substrate, and a thermistor film 4 formed on the insulating base film, wherein the insulating base film is formed so as to fill the irregularities on the surface of the metal substrate where the surface roughness of the insulating base film is lower than that of the metal substrate. In the method for producing this thermistor includes the steps of: applying polysilazane on the metal substrate; drying the polysilazane to form the insulating base film of SiO.sub.x containing nitrogen; and depositing the thermistor film on the insulating base film.

The chip resistor according to the present disclosure includes insulating substrate, a pair of upper face electrodes provided on both ends of one face of insulating substrate, and resistor provided on the one face of insulating substrate and connected between the pair of upper face electrodes. The chip resistor includes a pair of end-face electrodes provided on both end faces of insulating substrate to be electrically connected to the pair of upper face electrodes, and plating layer formed on portions of the pair of upper face electrodes and faces of the pair of end-face electrodes. Insulating film formed of a resin is provided on another face opposite to the one face of insulating substrate. Insulating film has a thickness of more than or equal to 30 m.

An object is to provide a method for manufacturing a resistor capable of suppressing variations in the thickness of a thermally conductive layer interposed between a resistive body and electrode plates. The method for manufacturing a resistor according to the present invention includes a step of forming an unhardened thermally conductive layer on a surface of a resistive body, a step of bringing the thermally conductive layer into a semi-hardened state, and a step of bending electrode plates respectively disposed at both sides of the resistive body, further hardening the thermally conductive layer, and performing adhesion between the resistive body and the electrode plates via the thermally conductive layer.