A magnetic sheet includes one or more magnetic layers formed of a metal ribbon, the metal ribbon includes fragments with metal oxide coating layers formed in spaces between the fragments.

An internal structure of a magnetic material is phase-separated into at least a first phase and a second phase. At least one of the first phase and the second phase includes a compound having a perovskite structure. The first phase and the second phase include Mn, Sn, and N. According to this, it is possible to obtain a magnetic material in which magnetic properties such as a coercive force are improved. In addition, in a case where a rare-earth element is not included in elements that constitute the magnetic material, it is possible to obtain a magnetic material having corrosion resistance.

This semiconductor device comprises an active layer that is formed of an oxide magnetic material and a porous dielectric body that contains water and is provided on the active layer. By using hydrogen ions and hydroxide ions which are formed by electrolysis of water, the crystal structure of the active layer is changed between a ferromagnetic metal and an antiferromagnetic insulating body.

A structure includes an electronically controllable ferromagnetic oxide structure that includes at least three layers. The first layer comprises STO. The second layer has a thickness of at least about 3 unit cells, said thickness being in a direction substantially perpendicular to the interface between the first and second layers. The third layer is in contact with either the first layer or the second layer or both, and is capable of altering the charge carrier density at the interface between the first layer and the second. layer. The interface between the first and second layers is capable of exhibiting electronically controlled ferromagnetism.

A coil component having a magnetic material and a coil formed on a surface of or inside the magnetic material. The magnetic material is constituted by a grain compact formed by compacting multiple metal grains that in turn are constituted by an FeSiM soft magnetic alloy (where M is a metal element that oxidizes more easily than Fe), wherein individual metal grains have oxide film formed at least partially around them; the grain compact is formed primarily via bonding between oxide films formed around adjacent metal grains; and the apparent density of the grain compact 1 is 5.2 g/cm.sup.3 or more, or preferably 5.2 to 7.0 g/cm.sup.3.

An apparatus is provided that includes an electromagnetic sensing unit to sense an electromagnetic field. The apparatus also includes a shielding layer to shield at least a portion of the electromagnetic field, the shielding layer including a magnetic material.

The invention provides compositions and methods relating to self-assembly of structures of various size and shape complexity. The composition include synthetic single-stranded polymers having a backbone and pre-determined linear arrangement of monomers.

Provided are an organic magnetic material and a semiconductor device including the same. According to the inventive concept, the organic magnetic material may include a material represented by Formula 1 below. ##STR00001##

An R-T-B rare earth sintered magnet contains R which represents a rare earth element; T which represents a transition metal essentially containing Fe; a metal element M which represents Al and/or Ga; B; Cu; and inevitable impurities the R-T-B rare earth sintered magnet including 13.4 to 17 at % of R, 4.5 to 5.5 at % of B, and 0.1 to 2.0 at % of M, and T as the balance; in which the R-T-B rare earth sintered magnet is formed of a sintered body which includes a main phase composed of R.sub.2Fe.sub.14B and a grain boundary phase including a larger amount of R than the main phase; in which the magnetization direction of the main phase is a c-axis direction, in which crystal grains of the main phase have one of an elliptical shape and an oval shape extended in such a direction so as to cross the c-axis direction; and in which the grain boundary phase includes an R-rich phase in which the total atomic concentration of the rare earth elements is 70 at % or greater and a transition metal-rich phase in which the total atomic concentration of the rare earth elements is 25 to 35 at %.

An R-T-B rare earth sintered magnet contains R which represents a rare earth element; T which represents a transition metal essentially containing Fe; a metal element M which represents Al and/or Ga; B; Cu; and inevitable impurities the R-T-B rare earth sintered magnet including 13.4 to 17 at % of R, 4.5 to 5.5 at % of B, and 0.1 to 2.0 at % of M, and T as the balance; in which the R-T-B rare earth sintered magnet is formed of a sintered body which includes a main phase composed of R.sub.2Fe.sub.14B and a grain boundary phase including a larger amount of R than the main phase; in which the magnetization direction of the main phase is a c-axis direction, in which crystal grains of the main phase have one of an elliptical shape and an oval shape extended in such a direction so as to cross the c-axis direction; and in which the grain boundary phase includes an R-rich phase in which the total atomic concentration of the rare earth elements is 70 at % or greater and a transition metal-rich phase in which the total atomic concentration of the rare earth elements is 25 to 35 at %.