An asymmetric pigment including a first Fabry-Perot structure; and a second Fabry-Perot structure; wherein the first Fabry-Perot structure and the second Fabry-Perot structure have a similar hue angle within +/45 degrees is disclosed. Other asymmetric pigments are also disclosed as well as methods of making the disclosed pigments.

A magnetic material is constituted of a ferromagnetic or ferrimagnetic insulator in a double perovskite structure of Sr.sub.3-xA.sub.xOs.sub.1-yB.sub.yO.sub.6 (0.5x0.5, 0.5y0.5). A is an alkali metal or alkaline earth metal atom, and B is a transition metal atom, alkali metal atom, or alkaline earth metal atom). The insulator may be Sr.sub.3OsO.sub.6, where x=y=0 in the above formula. Sr.sub.3OsO.sub.6 is formed to have a cubic crystal structure where strontium atoms, osmium atoms, and oxygen atoms are arranged at lattice points.

An object of the invention is to provide: an MgB.sub.2 superconducting thin-film wire that exhibits excellent J.sub.c characteristics even under a 20 K magnetic field; and a method for producing thereof. The MgB.sub.2 superconducting thin-film wire includes a long substrate and an MgB.sub.2 thin film formed on the long substrate. The MgB.sub.2 thin film has a microtexture such that MgB.sub.2 columnar crystal grains stand densely together on the surface of the long substrate, and has T.sub.c of 30 K or higher. In grain boundary regions of the MgB.sub.2 columnar crystal grains, a predetermined transition metal element is dispersed and segregated. The predetermined transition metal element is an element having a body-centered cubic lattice structure.

An object of the invention is to provide: an MgB.sub.2 superconducting thin-film wire that exhibits excellent J.sub.c characteristics even under a 20 K magnetic field; and a method for producing thereof. The MgB.sub.2 superconducting thin-film wire includes a long substrate and an MgB.sub.2 thin film formed on the long substrate. The MgB.sub.2 thin film has a microtexture such that MgB.sub.2 columnar crystal grains stand densely together on the surface of the long substrate, and has T.sub.c of 30 K or higher. In grain boundary regions of the MgB.sub.2 columnar crystal grains, a predetermined transition metal element is dispersed and segregated. The predetermined transition metal element is an element having a body-centered cubic lattice structure.

An asymmetric pigment including a first Fabry-Perot structure; and a second Fabry-Perot structure; wherein the first Fabry-Perot structure and the second Fabry-Perot structure have a similar hue angle within +/45 degrees is disclosed. Other asymmetric pigments are also disclosed as well as methods of making the disclosed pigments.

An asymmetric pigment including a first Fabry-Perot structure; and a second Fabry-Perot structure; wherein the first Fabry-Perot structure and the second Fabry-Perot structure have a similar hue angle within +/45 degrees is disclosed. Other asymmetric pigments are also disclosed as well as methods of making the disclosed pigments.

A magnetic junction and method for providing the magnetic junction are described. The method includes providing a pinned layer, a nonmagnetic spacer layer and a free layer switchable between stable magnetic states. The nonmagnetic spacer layer is between the pinned and free layers. Providing the pinned layer and/or providing the free layer includes cooling a portion of the magnetic junction, depositing a wetting layer while the portion of the magnetic junction is cooled, oxidizing/nitriding the wetting layer and depositing a boron-free magnetic layer on the oxide/nitride wetting layer. The portion of the magnetic junction is cooled to within a temperature range including temperature(s) not greater than 250 K. The wetting layer has a thickness of at least 0.25 and not more than three monolayers. The wetting layer includes at least one magnetic material. The boron-free magnetic layer has a perpendicular magnetic anisotropy energy greater than an out-of-plane demagnetization energy.

A magnetic junction and method for providing the magnetic junction are described. The method includes providing a pinned layer, a nonmagnetic spacer layer and a free layer switchable between stable magnetic states. The nonmagnetic spacer layer is between the pinned and free layers. Providing the pinned layer and/or providing the free layer includes cooling a portion of the magnetic junction, depositing a wetting layer while the portion of the magnetic junction is cooled, oxidizing/nitriding the wetting layer and depositing a boron-free magnetic layer on the oxide/nitride wetting layer. The portion of the magnetic junction is cooled to within a temperature range including temperature(s) not greater than 250 K. The wetting layer has a thickness of at least 0.25 and not more than three monolayers. The wetting layer includes at least one magnetic material. The boron-free magnetic layer has a perpendicular magnetic anisotropy energy greater than an out-of-plane demagnetization energy.

A magnetic junction and method for providing the magnetic junction are described. The method includes providing a pinned layer, a nonmagnetic spacer layer and a free layer switchable between stable magnetic states. The nonmagnetic spacer layer is between the pinned and free layers. Providing the pinned layer and/or providing the free layer includes cooling a portion of the magnetic junction, depositing a wetting layer while the portion of the magnetic junction is cooled, oxidizing/nitriding the wetting layer and depositing a boron-free magnetic layer on the oxide/nitride wetting layer. The portion of the magnetic junction is cooled to within a temperature range including temperature(s) not greater than 250 K. The wetting layer has a thickness of at least 0.25 and not more than three monolayers. The wetting layer includes at least one magnetic material. The boron-free magnetic layer has a perpendicular magnetic anisotropy energy greater than an out-of-plane demagnetization energy.

A magnetic junction and method for providing the magnetic junction are described. The method includes providing a pinned layer, a nonmagnetic spacer layer and a free layer switchable between stable magnetic states. The nonmagnetic spacer layer is between the pinned and free layers. Providing the pinned layer and/or providing the free layer includes cooling a portion of the magnetic junction, depositing a wetting layer while the portion of the magnetic junction is cooled, oxidizing/nitriding the wetting layer and depositing a boron-free magnetic layer on the oxide/nitride wetting layer. The portion of the magnetic junction is cooled to within a temperature range including temperature(s) not greater than 250 K. The wetting layer has a thickness of at least 0.25 and not more than three monolayers. The wetting layer includes at least one magnetic material. The boron-free magnetic layer has a perpendicular magnetic anisotropy energy greater than an out-of-plane demagnetization energy.