A fabrication method for fabricating a magnetic film provided body includes preparing a base body and forming a magnetic film on the base body. The magnetic film includes organic film(s) and ferrite film(s) alternately layered. The formation of the magnetic film alternately includes forming a ferrite film through a ferrite plating method, the ferrite film having a thickness of 20 m or less and forming an organic film having a thickness of 0.1 m to 20 m, both inclusive, and a ratio t/E of 0.025 m/GPa or more, where t indicates the thickness of the organic film while E indicates Young's modulus of the organic film.

An integrated circuit is a layered device, on a semiconductor substrate, which contains metal electrodes that sandwich a piezoelectric layer, followed by a magnetostrictive layer and a metal coil. The metal electrodes define an electrical port across which to receive an alternating current (AC) voltage, which is applied across the piezoelectric layer to cause a time-varying strain in the piezoelectric layer. The magnetostrictive layer is to translate the time-varying strain, received by way of a vibration mode from interaction with the piezoelectric layer, into a time-varying electromagnetic field. The metal coil, disposed on the magnetostrictive layer, includes a magnetic port at which to induce a current based on exposure to the time-varying electromagnetic field generated by the magnetostrictive layer.

An electrostatically tunable magnetoelectric inductor including: a substrate; a piezoelectric layer; and a magnetoelectric structure comprising a first electrically conductive layer, a magnetic film layer, a second electrically conductive layer, and recesses formed so as to create at least one electrically conductive coil around the magnetic film layer; with a portion of the substrate removed so as to enhance deformation of the piezoelectric layer. Also disclosed is a method of making the same. This inductor displays a tunable inductance range of >5:1 while consuming less than 0.5 mJ of power in the process of tuning, does not require continual current to maintain tuning, and does not require complex mechanical components such as actuators or switches.

A magnetic laminating structure and process for preventing substrate bowing include a first magnetic layer, at least one additional magnetic layer, and a dielectric spacer disposed between the first and at least one additional magnetic layers. The magnetic layers are characterized by defined tensile strength. To balance the tensile strength of the magnetic layer, the dielectric layer is selected to provide compressive strength so as to counteract the tendency of the wafer to bow as a consequence of the tensile strength imparted by the magnetic layer(s).

A magnetic material has: multiple soft magnetic alloy grains that contain Fe, element L (where element L is Si, Zr, or Ti), and element M (where element M is not Si, Zr, or Ti, and oxidizes more easily than Fe); a first oxide film that contains element L and covers each of the multiple soft magnetic alloy grains; a second oxide film that contains element M and covers the first oxide film; a third oxide film that contains element L and covers the second oxide film; a fourth oxide film that contains Fe and covers the third oxide film; and bonds that are constituted by parts of the fourth oxide film and that bond the multiple soft magnetic alloy grains together.

An electrostatically tunable magnetoelectric inductor including: a substrate; a piezoelectric layer; and a magnetoelectric structure comprising a first electrically conductive layer, a magnetic film layer, a second electrically conductive layer, and recesses formed so as to create at least one electrically conductive coil around the magnetic film layer; with a portion of the substrate removed so as to enhance deformation of the piezoelectric layer. Also disclosed is a method of making the same. This inductor displays a tunable inductance range of >5:1 while consuming less than 0.5 mJ of power in the process of tuning, does not require continual current to maintain tuning, and does not require complex mechanical components such as actuators or switches.

According to one embodiment, an electromagnetic wave attenuator includes a first structure body. The first structure body includes a first member, a second member, and a third member. The first member includes a first magnetic layer and a first nonmagnetic layer alternately provided in a first direction. The first nonmagnetic layer is conductive. The first direction is a stacking direction. The second member includes a second magnetic layer and a second nonmagnetic layer alternately provided in the first direction. The second nonmagnetic layer is conductive. The third member includes a third nonmagnetic layer. The third nonmagnetic layer is conductive. A direction from the third member toward the first member is along the first direction. A direction from the third member toward the second member is along the first direction. A first magnetic layer thickness is greater than a second magnetic layer thickness.

A semiconductor structure is provided. The semiconductor structure includes a substrate; and a plurality of parallel first conductive layers formed on the substrate. The semiconductor structure also includes a composite magnetic structure having a plurality of magnetic layers and a plurality of insulation layers with a sandwich arrangement formed on a portion of the substrate and portions of surfaces of the plurality of first conductive layers. Further, the semiconductor structure includes a plurality of first conductive vias and a plurality of second conductive vias formed on the first conductive layers at both sides of the composite magnetic structure. Further, the semiconductor structure also includes a plurality of second conductive layers formed on a top surface of the composite magnetic structure, top surfaces of the first conductive vias, and top surfaces of the second conductive vias to form at least one coil structure wrapping around the composite magnetic structure.

Forming a ferrite thin film laminate includes heating a layered assembly to form a laminate. The layered assembly includes a first coated substrate having a first ferrite layer opposite a first thermoplastic surface and a second coated substrate having a second ferrite layer opposite a second thermoplastic surface to form a laminate. Each coated substrate is formed by forming a ferrite layer on a surface of a thermoplastic substrate. The coated substrates are arranged such that the first ferrite layer contacts the second thermoplastic surface. Heating the layered assembly includes bonding the first coated substrate to the second coated substrate such that the first ferrite layer is sandwiched between a first thermoplastic substrate and a second thermoplastic substrate. The ferrite thin film laminate may include a multiplicity of coated substrates.

A semiconductor structure is provided. The semiconductor structure includes a substrate; and a plurality of parallel first conductive layers formed on the substrate. The semiconductor structure also includes a composite magnetic structure having a plurality of magnetic layers and a plurality of insulation layers with a sandwich arrangement formed on a portion of the substrate and portions of surfaces of the plurality of first conductive layers. Further, the semiconductor structure includes a plurality of first conductive vias and a plurality of second conductive vias formed on the first conductive layers at both sides of the composite magnetic structure. Further, the semiconductor structure also includes a plurality of second conductive layers formed on a top surface of the composite magnetic structure, top surfaces of the first conductive vias, and top surfaces of the second conductive vias to form at least one coil structure wrapping around the composite magnetic structure.