A top electrode of a magnetoresistive random access memory (MRAM) device over a magnetic tunnel junction (MTJ) is formed using a film of titanium nitride oriented in a (111) crystal structure rather than a top electrode which uses tantalum, tantalum nitride, and/or a multilayer including tantalum and tantalum nitride.

Certain embodiments are directed to a spin torque oscillator (STO) device in a microwave assisted magnetic recording (MAMR) device. The magnetic recording head includes a seed layer, a spin polarization layer over the seed layer, a spacer layer over the spin polarization layer, and a field generation layer is over the spacer layer. In one embodiment, the seed layer comprises a tantalum alloy layer. In another embodiment, the seed layer comprises a template layer and a damping reduction layer over the template layer. In yet another embodiment, the seed layer comprises a texture reset layer, a template layer on the texture reset layer, and a damping reduction layer on the template layer.

Provided is a method of measuring a magnitude of magnetization of a perpendicular magnetic thin film, including: forming a stripe pattern in which a first magnetic domain that extends in a y direction and is magnetized in a z direction and a second magnetic domain that extends in the y direction and is magnetized in a direction opposite to the z direction are arranged alternately in an x direction, in a perpendicular magnetic thin film that extends in an xy plane; changing widths in the x direction, of the first and second magnetic domains by applying a magnetic field having a predetermined magnitude, in the z direction, to the perpendicular magnetic thin film; and calculating an absolute value of the magnetization of the perpendicular magnetic thin film on the basis of a ratio between the widths in the x direction, of the first magnetic domain and the second magnetic domain.

Provided is a method of measuring a magnitude of magnetization of a perpendicular magnetic thin film, including: forming a stripe pattern in which a first magnetic domain that extends in a y direction and is magnetized in a z direction and a second magnetic domain that extends in the y direction and is magnetized in a direction opposite to the z direction are arranged alternately in an x direction, in a perpendicular magnetic thin film that extends in an xy plane; changing widths in the x direction, of the first and second magnetic domains by applying a magnetic field having a predetermined magnitude, in the z direction, to the perpendicular magnetic thin film; and calculating an absolute value of the magnetization of the perpendicular magnetic thin film on the basis of a ratio between the widths in the x direction, of the first magnetic domain and the second magnetic domain.

Systems, methods, and apparatus for generating an ideal diamagnetic response are disclosed. A disclosed diamagnetic system includes a metal foil or a first substrate having at least one surface that is coated by a metallic layer (e.g., permalloy). The diamagnetic system also includes a second substrate having at least one surface that is coated by graphene. The first and second substrates are immersed in an alkane (e.g., n-heptane). The diamagnetic system produces a diamagnetic response at room temperature in an applied magnetic field when the alkane is added to surround the permalloy and graphene.

Systems, methods, and apparatus for generating an ideal diamagnetic response are disclosed. A disclosed diamagnetic system includes a metal foil or a first substrate having at least one surface that is coated by a metallic layer (e.g., permalloy). The diamagnetic system also includes a second substrate having at least one surface that is coated by graphene. The first and second substrates are immersed in an alkane (e.g., n-heptane). The diamagnetic system produces a diamagnetic response at room temperature in an applied magnetic field when the alkane is added to surround the permalloy and graphene.

The present invention provides a perpendicularly magnetized film structure exhibiting high interface-induced magnetic anisotropy by utilizing a combination of an alloy comprising Fe as a main component and MgAl.sub.2O.sub.4 as a basic configuration.

Large magnetic moment compositions are formed by stabilizing ternary or other alloys with a epitaxial control layer. Compositions that are unstable in bulk specimen are thus stabilized and exhibit magnetic moments that are greater that a Slater-Pauling limit. In one example, Fe.sub.xCo.sub.yMn.sub.z layers are produced on an MgO(001) substrate with an MgO surface serving to control the structure of the Fe.sub.xCo.sub.yMn.sub.z layers. Magnetizations greater than 3 Bohr magnetons are produced.

Large magnetic moment compositions are formed by stabilizing ternary or other alloys with a epitaxial control layer. Compositions that are unstable in bulk specimen are thus stabilized and exhibit magnetic moments that are greater that a Slater-Pauling limit. In one example, Fe.sub.xCo.sub.yMn.sub.z layers are produced on an MgO(001) substrate with an MgO surface serving to control the structure of the Fe.sub.xCo.sub.yMn.sub.z layers. Magnetizations greater than 3 Bohr magnetons are produced.

A perpendicular bottom-free-layer STT-MRAM cell includes a bottom-free-layer magnetic tunnel junction (BMTJ). The BMTJ includes a composite metal oxide seed layer, and a free layer comprising boron (B) on the composite metal oxide seed layer. The composite metal oxide seed layer includes a first metal layer; a metal oxide layer on the first metal layer; and a second metal layer on the metal oxide layer. The second metal layer has been oxygen treated.