The invention comprises a novel composite multi-stack seed layer (CMSL) having lattice constant matched crystalline structure with the Co layer in above perpendicular magnetic pinning layer (pMPL) so that an excellent epitaxial growth of magnetic super lattice pinning layer [Co/(Pt, Pd or Ni)].sub.n along its FCC (111) orientation can be achieved, resulting in a significant enhancement of perpendicular magnetic anisotropy (PMA) for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.

A magnetic memory device includes a pinned layer, a free layer, a tunnel barrier layer between the pinned layer and the free layer, a first oxide layer spaced apart from the tunnel barrier layer with the free layer therebetween, and a second oxide layer spaced apart from the free layer with the first oxide layer therebetween. The first oxide layer includes an oxide of a first material and may have a thickness of 0.3 Å to 2.0 Å. The second oxide layer may include an oxide of a second material and may have a thickness of 0.1 Å to 5.0 Å. A first oxygen affinity of the first material may be greater than a second oxygen affinity of the second material.

A magnetic memory structure is provided. The magnetic memory structure includes a magnetic tunneling junction (MTJ) layer and a heavy-metal layer. The MTJ layer includes a pinned-layer, a barrier-layer formed under the pinned-layer and a free-layer formed under the barrier-layer. The heavy-metal layer is formed under the free-layer. The barrier-layer has a first upper surface, the pinned-layer has a lower surface, and area of the first upper surface is larger than area of the lower surface.

One illustrative MRAM cell disclosed herein includes a bottom electrode, a top electrode positioned above the bottom electrode and an MTJ (Magnetic Tunnel Junction) element positioned above the bottom electrode and below the top electrode. In this example, the MTJ element includes a bottom insulation layer positioned above the bottom electrode, a top insulation layer positioned above the bottom electrode; and a first ferromagnetic material layer positioned between the bottom insulation layer and the top insulation layer.

Aspects of the present disclosure include magnetic sensor devices having a mixed oxide passivation layer. Magnetic sensor devices according to certain embodiments include a magnetic sensor element and a passivation layer having two or more of zirconium oxide, aluminum oxide and tantalum oxide. Also provided are magnetic sensor devices having an encapsulating passivation layer. Magnetic sensor devices according to certain embodiments include a substrate, a magnetic sensor element and a passivation layer that encapsulates the magnetic sensor element. Methods for making a magnetic sensor with a passivation layer are described. Methods and systems for detecting one or more analytes in a sample are also described. Aspects further include kits having one or more of the subject magnetic sensor devices and a magnetic label.

Aspects of the present disclosure include magnetic sensor devices having a mixed oxide passivation layer. Magnetic sensor devices according to certain embodiments include a magnetic sensor element and a passivation layer having two or more of zirconium oxide, aluminum oxide and tantalum oxide. Also provided are magnetic sensor devices having an encapsulating passivation layer. Magnetic sensor devices according to certain embodiments include a substrate, a magnetic sensor element and a passivation layer that encapsulates the magnetic sensor element. Methods for making a magnetic sensor with a passivation layer are described. Methods and systems for detecting one or more analytes in a sample are also described. Aspects further include kits having one or more of the subject magnetic sensor devices and a magnetic label.

The present invention relates to the technical field of superlattice magneto-optical material technologies, and in particular, to a superlattice material, and a preparation method and application thereof. According to description of embodiments, the superlattice material provided in the present invention has both a relatively good magnetic property of a ferrous garnet material and a good photoelectric absorption characteristic of a two-dimensional semiconductor material such as graphene. Magneto-optical Kerr effect data obtained through testing shows that: A saturated magneto-optical Kerr angle of the superlattice material in the present invention is 13 mdeg in a magnetic field of 2500 Oe, and a magneto-optical Kerr angle of the superlattice material is increased by 2.5 times compared with a nonsuperlattice ferrimagnetic thin film material into which no two-dimensional material is inserted, thereby achieving magneto-optical effect enhancement.

The present invention relates to the technical field of superlattice magneto-optical material technologies, and in particular, to a superlattice material, and a preparation method and application thereof. According to description of embodiments, the superlattice material provided in the present invention has both a relatively good magnetic property of a ferrous garnet material and a good photoelectric absorption characteristic of a two-dimensional semiconductor material such as graphene. Magneto-optical Kerr effect data obtained through testing shows that: A saturated magneto-optical Kerr angle of the superlattice material in the present invention is 13 mdeg in a magnetic field of 2500 Oe, and a magneto-optical Kerr angle of the superlattice material is increased by 2.5 times compared with a nonsuperlattice ferrimagnetic thin film material into which no two-dimensional material is inserted, thereby achieving magneto-optical effect enhancement.

A method of fabricating a magnetoresistive device may comprise forming an electrically conductive region and forming a first seed region on one side of the electrically conductive region. A surface of the first seed region may be treated by exposing the surface to a gas. A second seed region may be formed on the treated surface of the first seed region. The method may also comprise forming a magnetically fixed region on one side of the second seed region.

According to one embodiment, an electromagnetic wave attenuator includes a first structure body. The first structure body includes a first member, a second member, and a third member. The first member includes a first magnetic layer and a first nonmagnetic layer alternately provided in a first direction. The first nonmagnetic layer is conductive. The first direction is a stacking direction. The second member includes a second magnetic layer and a second nonmagnetic layer alternately provided in the first direction. The second nonmagnetic layer is conductive. The third member includes a third nonmagnetic layer. The third nonmagnetic layer is conductive. A direction from the third member toward the first member is along the first direction. A direction from the third member toward the second member is along the first direction. A first magnetic layer thickness is greater than a second magnetic layer thickness.