A system and method for providing and programming a programmable inductor is provided. The structure of the programmable inductor includes multiple turns, with programmable interconnects incorporated at various points around the turns to provide a desired isolation of the turns during programming. In an embodiment the programming may be controlled using the size of the vias, the number of vias, or the shapes of the interconnects.

An asymmetric spiral inductor fabricated in a semiconductor structure includes a spiral coil, a metal segment, and a connection structure. The spiral coil is substantially disposed in a first metal layer and includes a first terminal and a second terminal. The first terminal is disposed at an outermost turn of the spiral coil, and the second terminal is disposed at an innermost turn of the spiral coil. The metal segment is disposed in a second metal layer different from the first metal layer and has a third terminal and a fourth terminal. The connection structure connects the second terminal and the third terminal. The first terminal and the fourth terminal form the two terminals of the asymmetric spiral inductor. The spiral coil is a polygon with N sides (N>4). A portion of the metal segment has a shape substantially identical to a portion of the contour of the polygon.

The invention discloses crossing structures of an integrated transformer or an integrated inductor. The crossing structures can be applied to various integrated transformers or integrated inductors. The crossing structures disclosed in the present invention includes multiple segments fabricated on a first metal layer of the semiconductor structure and multiple segments fabricated on a second metal layer of the semiconductor structure, the first metal layer being different from the second metal layer.

An asymmetric spiral inductor fabricated in a semiconductor structure includes a spiral coil, a metal segment, and a connection structure. The spiral coil is substantially disposed in a first metal layer and includes a first terminal and a second terminal. The first terminal is disposed at an outermost turn of the spiral coil, and the second terminal is disposed at an innermost turn of the spiral coil. The metal segment is disposed in a second metal layer different from the first metal layer and has a third terminal and a fourth terminal. The connection structure connects the second terminal and the third terminal. The first terminal and the fourth terminal form the two terminals of the asymmetric spiral inductor. The spiral coil is a polygon with N sides (N>4). A portion of the metal segment has a shape substantially identical to a portion of the contour of the polygon.

A transformer has a first inductor that includes a first port. The transformer also has a second inductor magnetically coupled to the first inductor. The second inductor includes a second port. The second inductor includes a first portion configured to permit current flow in a clockwise direction and a second portion configured to permit current flow in a counter-clockwise direction. The transformer also has a third inductor magnetically coupled to the first inductor. The third inductor includes a third port. The counter-clockwise direction is opposite the clockwise direction to reduce magnetic coupling between the second inductor and the third inductor based on magnetic coupling cancellation.

A spiral inductor includes a spiral trace and a plurality of first projections extending along a first edge of the spiral trace. The spiral inductor may further include a plurality of second projections extending along a second edge of the spiral trace, the second edge being opposite the first edge.

An inductor includes a first metallization layer multi-turn trace. The inductor also includes a second metallization layer multi-turn trace coupled to the first metallization layer multi-turn trace through at least one first via. The inductor further includes a plurality of discrete third metallization layer trace segments coupled to the second metallization layer multi-turn trace through a plurality of second vias.

A semiconductor element includes a first coil substantially located at a first plane; a second coil substantially located at the first plane; a connecting section that connects the first coil and the second coil; a third coil substantially located at a second plane different from the first plane; and a fourth coil substantially located at the second plane. The third coil and the first coil are connected through a through structure, and the fourth coil and the second coil are connected through a through structure. The third coil and the fourth are not directly connected.

An inductor device includes a first trace, a second trace, and at least one connection member. The first trace is disposed on a first area. The second trace is disposed on a second area. The first area and the second area are coupled to each other at a junction. The at least connection member is disposed at a block at which the first trace and the second trace are not disposed and which is adjacent to the junction, and the at least connection member is coupled to the first trace and the second trace.

A coil component includes a body, a planar spiral-shaped coil portion disposed in the body, a lead portion disposed to be spaced apart from the coil portion in the body, a support substrate disposed between the coil portion and the lead portion to correspond to the lead portion, a via penetrating through the support substrate to connect an internal end portion of the coil portion and an internal end portion of the lead portion to each other, an insulating layer covering the coil portion and the lead portion, and a first external electrode and a second external electrode disposed to be spaced apart from each other on a surface of the body and connected to the external end portion of each of the coil portion and the lead portion.