An inductor bridge includes a flexible substrate and a coil defined by a conductor pattern provided on or in the flexible substrate, and connects a plurality of circuit portions. The flexible substrate includes a rigid portion and a flexible portion, the rigid portion being wider than the flexible portion. The rigid portion includes the coil and a joining portion connected to another circuit. The coil includes two coil portions located at different positions in plan view, a flexible portion is located adjacent to one side of the rigid portion, and at least two coil portions of the plurality of coil portions are located on the one side when viewed from the joining portion.

An electronic component includes an insulating base material substrate including a first main surface defining a mounting surface, a coil on the insulating base material substrate, and a mounting electrode on the first main surface and connected to the coil. The insulating base material substrate includes insulating base material layers laminated in a lamination direction. The coil includes a coil conductor provided on one of the insulating base material layers and a winding axis extending in the lamination direction. An area of the first main surface is smaller than an area of a section different in area from the first main surface and is closest to the first main surface, among sections parallel or substantially parallel to the first main surface.

Apparatuses and methods for providing inductance are disclosed. In one embodiment, a method for providing an inductor includes forming an electrical circuit on a substrate, forming a seal ring around the perimeter of the electrical circuit, providing a break in at least one layer of the seal ring, and electrically connecting the seal ring such that the seal ring operates as an inductor.

An inductor or transformer with the inductor can include one or more windings split into strands along a radial path of the winding and provide for a more uniform current distribution across a width of the winding. The winding(s) can comprise twisting components as twistings or strand crossings located at various locations along the winding. The twisting components span the winding along a winding width with a connector or crossing strand and change a position of one strand to another at points that different strands of the winding are cut or spliced.

Fabrication methods for a 3D multipath inductor, including forming a metal layer to form spiral turns about a center region, the spiral turns including segments that extend length-wise along the turns and having positions that vary from an innermost position and an outermost position relative to the center region; forming a lateral cross-over configured to couple portions of lateral segments in different relative positions from the center region to form lateral segment paths that have a substantially same length for all lateral segment paths in a grouping thereof; forming an additional metal layer to form spiral turns about the center region including corresponding geometry to the first metal layer; and forming a vertical cross-over configured to couple portions of segments on different metal layers to form vertical segment paths that have a substantially same length for all vertical segment paths in a grouping thereof.

A semiconductor element includes a first coil substantially located at a first plane; a second coil substantially located at the first plane; a connecting section that connects the first coil and the second coil; a third coil substantially located at a second plane different from the first plane; and a fourth coil substantially located at the second plane. The third coil and the first coil are connected through a through structure, and the fourth coil and the second coil are connected through a through structure. The third coil and the fourth are not directly connected.

A semiconductor element includes a first spiral coil, a second spiral coil, a connecting section, a first guide segment, and a second guide segment. The first spiral coil is formed with a first end and a second end, and includes a first inner turn and a first outer turn. The first inner turn is located in a range surrounded by the outer turn, and the first end and the second end are located at the first inner turn. The second spiral coil and the first spiral coil are located in substantially a same metal layer. The connecting section connects the first spiral coil and the second spiral coil. The first guide segment is connected to the first end. The second guide segment is connected to the second end. The first guide segment and the second guide segment are fabricated in a metal layer different from a metal layer of the first spiral coil.

A T-coil IC includes a first inductor on an M.sub.x layer. The first inductor has n turns, where n is at least 1 turns. The T-coil IC further includes a second inductor on an M.sub.x1 layer. The second inductor has n turns. The first inductor and the second inductor are connected together at a node. The first inductor on the M.sub.x layer and the second inductor on the M.sub.x1 layer are mirror symmetric to each other. The T-coil IC further includes a center tap on an M.sub.x2y layer, where y0. The center tap is connected to the first inductor and the second inductor by a via stack at the node. In one configuration, n is 1+0.5z turns, where z0. An effective bridge capacitance of the T-coil IC may be approximately 25 fF.

A semiconductor element includes a first coil substantially located at a first plane; a second coil substantially located at the first plane; a connecting section that connects the first coil and the second coil; a third coil substantially located at a second plane different from the first plane; and a fourth coil substantially located at the second plane. The third coil and the first coil are connected through a through structure, and the fourth coil and the second coil are connected through a through structure. The third coil and the fourth are not directly connected.

A semiconductor element includes a first spiral coil, a second spiral coil, a connecting section, a first guide segment, and a second guide segment. The first spiral coil is formed with a first end and a second end, and includes a first inner turn and a first outer turn. The first inner turn is located in a range surrounded by the outer turn, and the first end and the second end are located at the first inner turn. The second spiral coil and the first spiral coil are located in substantially a same metal layer. The connecting section connects the first spiral coil and the second spiral coil. The first guide segment is connected to the first end. The second guide segment is connected to the second end. The first guide segment and the second guide segment are fabricated in a metal layer different from a metal layer of the first spiral coil.