A stacked spiral inductor, comprising: a substrate, and multiple stacked insulating layers and inductive metal layers formed on the substrate by means of a semiconductor process. Each inductive metal layer comprises a conductive coil in a shape of a spiral and a through hole area used for connecting two adjacent inductive metal layers. The conductive coils of the inductive metal layers have a common coil center. In two adjacent inductive metal layers, the conductive coil of the lower inductive metal layer is retracted toward the coil center with respect to the conductive coil of the upper inductive metal layer.

An integrated vertical inductor includes a bobbin having an elongated, hollow tube, an upper flange disposed at an upper end of the elongated, hollow tube, and a base structure integrated with a lower end of the elongated, hollow tube. The elongated, hollow tube comprises a central opening extending along its longitudinal direction. The base structure comprises a lateral opening communicating with the central opening. A first magnetic core piece is installed in the central opening of the elongated, hollow tube. A second magnetic core piece is juxtaposed with the first magnetic core piece. A plurality of electrodes is disposed on a bottom surface of the base structure.

An electronic component includes: a magnetic body; first and second internal coil parts embedded in the magnetic body to be spaced apart from each other and including coil conductors disposed on first and second support members; and a spacer part disposed between the first and second internal coil parts and suppressing mutual interference of magnetic fields generated by the first and second internal coil parts.

A system includes a circuit board, an inductor including windings mounted on the circuit board, and a plurality of magnetic field containment devices. Each magnetic field containment device includes an independent electrical circuit that is not directly electrically connected via a conductor to any other magnetic field containment device. Each magnetic field containment device also includes a material of a certain relative permeability. Each magnetic field containment device at least partially surrounds the inductor and, in operation, at least partially contains a magnetic B-Field generated by electrical current in the windings of the inductor. The plurality of magnetic field containment devices, in operation, enables a certain saturation current in the inductor.

A multilayer body includes a first pattern conductor, and first and second via conductors. A first end of the first via conductor is electrically coupled with a second signal electrode, and a second end thereof is electrically coupled with the first pattern conductor. A first end of the second via conductor is electrically coupled with the first pattern conductor. The first pattern conductor extends such that a distance between the second via conductor and a second shield electrode is smaller than a distance between the first via conductor and the second shield electrode, a distance between the second via conductor and a third shield electrode is smaller than a distance between the first via conductor and the third shield electrode, and a coupling portion between the second via conductor and the first pattern conductor is outside an area of the second signal electrode.

A multilayer body includes a first pattern conductor, and first and second via conductors. A first end of the first via conductor is electrically coupled with a second signal electrode, and a second end thereof is electrically coupled with the first pattern conductor. A first end of the second via conductor is electrically coupled with the first pattern conductor. The first pattern conductor extends such that a distance between the second via conductor and a second shield electrode is larger than a distance between the first via conductor and the second shield electrode, a distance between the second via conductor and a third shield electrode is larger than a distance between the first via conductor and the third shield electrode, and a coupling portion between the second via conductor and the first pattern conductor is outside an area of the second signal electrode.

A device includes a printed circuit board (PCB). The device may also include a high voltage coil disposed on the PCB and a low voltage coil disposed on the PCB. Further, a conductive shield forms a three-dimensional enclosure around the high voltage coil and confines an electric field generated by the device to the PCB.

An inductive unit is formed in an integrated circuit. An electromagnetic radiation test is performed thereon. When an amount of electromagnetic radiation exceeds a radiation threshold value, a shielding structure is formed. The shielding structure has a width and a distance separated from the inductive unit such that a decreasing amount of a quality factor of the inductive unit is not larger than a first predetermined value and a shielded amount of electromagnetic radiation is not lower than a second predetermined value. The inductive unit has a symmetric shape and the inductive device further includes a single asymmetric inductive portion. The closed shape of the shielding structure encloses the inductive unit and covers the single asymmetric inductive portion. A part of the single asymmetric inductive portion extends along a peripheral direction of the shielding structure.

A multilayer substrate includes a via electrode defining and functioning as an end portion on ground terminals side of a first inductor connected to a shield electrode, the end portion on a signal line side is adjacent to or in a vicinity of a first principal surface than the end portion on the ground terminals side is in the lamination direction of base material layers, a via electrode defining and functioning as the end portion on the ground terminals side of a second inductor is connected to the shield electrode, and the end portion on the signal line side is adjacent to or in a vicinity of the first principal surface than the end portion on the ground terminals side is in the lamination direction of the base material layers.

To inhibit a decrease in inductance of an inductor in a plurality of semiconductor chips that are stacked. A semiconductor device includes: first and second semiconductor chips that are stacked; a first inductor; an arrangement-restricted region; and a circuit. In the semiconductor device, the first inductor is arranged in the first semiconductor chip. The arrangement-restricted region is provided in a region of the second semiconductor chip corresponding to the first inductor. The circuit is arranged in a region of the second semiconductor chip not corresponding to the arrangement-restricted region.