There are provided a thin film coil and an electronic device having the same, the thin film coil including a substrate; and a coil pattern including a first coil strand and a second coil strand formed on both surfaces of the substrate, respectively, wherein the first coil strand formed on one surface of the substrate includes at least one gyration path that passes through the other surface of the substrate and gyrates.

An integrated passive device and assemblies containing the same are disclosed. The integrated passive device can include a thin-film magnetic inductor. Various configurations of electrically connecting an integrated passive device to a processor and/or an interposer such as a chip-scale package are also disclosed.

In one aspect, an inductor may include at least one loop formed on a first metal layer and a non-uniform introduced pattern formed on the first metal layer and circumscribed by the at least one loop. The non-uniform introduced pattern may be formed of a plurality of structures and may have a maximum density at an interior portion thereof and a minimum density at a peripheral portion thereof, where at least some of the plurality of structures have different sizes.

A recess in a die backside surface occupies a footprint that accommodates an inductor coil that is formed in metallization above an active surface of the die. Less semiconductive material is therefore close to the inductor coil. A ferromagnetic material is formed in the recess, or a ferromagnetic material is formed on a dielectric layer above the inductor coil. The recess may extend across a die that allows the die to be deflected at the recess.

Embodiments of the invention include a microelectronic device and methods of forming a microelectronic device. In an embodiment the microelectronic device includes a semiconductor die and an inductor that is electrically coupled to the semiconductor die. The inductor may include one or more conductive coils that extend away from a surface of the semiconductor die. In an embodiment each conductive coils may include a plurality of traces. For example, a first trace and a third trace may be formed over a first dielectric layer and a second trace may be formed over a second dielectric layer and over a core. A first via through the second dielectric layer may couple the first trace to the second trace, and a second via through the second dielectric layer may couple the second trace to the third trace.

A semiconductor element includes a first spiral coil, a second spiral coil, a connecting section, a first guide segment, and a second guide segment. The first spiral coil is formed with a first end and a second end, and includes a first inner turn and a first outer turn. The first inner turn is located in a range surrounded by the outer turn, and the first end and the second end are located at the first inner turn. The second spiral coil and the first spiral coil are located in substantially a same metal layer. The connecting section connects the first spiral coil and the second spiral coil. The first guide segment is connected to the first end. The second guide segment is connected to the second end. The first guide segment and the second guide segment are fabricated in a metal layer different from a metal layer of the first spiral coil.

A semiconductor package may include a substrate, including an inductor array including inductor structures, and a semiconductor chip and a voltage regulator each on the substrate. Each of the inductor structures may include an input terminal, an output terminal, a coil between the input terminal and the output terminal, and conductive wirings. The inductor structures may be apart from one another in a second horizontal direction. Each of the coils may include a lower horizontal winding wound horizontally, an upper horizontal winding wound horizontally, and a conductive via. In a plan view, the coils may be arranged in zigzags, and the coils and the conductive wirings may be alternately arranged in the second horizontal direction.

A switched inductor DC-DC power converter chiplet includes a CMOS power switch, an LC filter, regulation circuitry, feedback control circuitry, and interface control circuitry integrated on a common substrate. The inductor for the LC filter can be formed on the same surface or on opposing surfaces of the substrate as the electrical terminations for the substrate. Another embodiment includes a switched inductor DC-DC power converter chiplet having a first powertrain phase and multiple second powertrain phases. When the load current is less than or equal to a threshold load current, the power conversion efficiency can be improved by only operating the first powertrain phase. When the load current is greater than the threshold load current, the power conversion efficiency can be improved by operating one or more second powertrain phases.

The present disclosure relates to, in part, an inductor structure that includes an etch stop layer arranged over an interconnect structure overlying a substrate. A magnetic structure includes a plurality of stacked layers is arranged over the etch stop layer. The magnetic structure includes a bottommost layer that is wider than a topmost layer. A first conductive wire and a second conductive wire extend in parallel over the magnetic structure. The magnetic structure is configured to modify magnetic fields generated by the first and second conductive wires. A pattern enhancement layer is arranged between the bottommost layer of the magnetic structure and the etch stop layer. The pattern enhancement layer has a first thickness, and the bottommost layer of the magnetic structure has a second thickness that is less than the first thickness.

The structure includes a semiconductor chip connected to a substrate via one or more solder balls. The semiconductor chip includes one or more on-chip metal winding. The structure includes a first ferromagnetic core. The first ferromagnetic core is located below the semiconductor chip and above the substrate. The structure includes a second ferromagnetic core. The second ferromagnetic core is located above the semiconductor chip. The first ferromagnetic core and the second ferromagnetic core create a magnetic loop.