An electronic device has a substrate and first and second metallization levels with a resonant circuit. The first metallization level has a first dielectric layer on a side of the substrate, and a first metal layer on the first dielectric layer. The second metallization level has a second dielectric layer on the first dielectric layer and the first metal layer, and a second metal layer on the second dielectric layer. The electronic device includes a first plate in the first metal layer, and a second plate spaced apart from the first plate in the second metal layer to form a capacitor. The electronic device includes a winding in one of the first and second metal layers and coupled to one of the first and second plates in a resonant circuit.

A planar, in particular intrinsically safe transformer, having: a sandwich-type layer structure having a plurality of layers extending horizontally and arranged vertically on top of one another, including a first and a second conductive layer and at least one insulating inner layer disposed between the two conductive layers, a plurality of electrical circuits, wherein a first electrical circuit and at least a second electrical circuit are galvanically isolated from each other; and at least one ring-type magnetic core having a hole, which acts at least on the first electrical circuit and the second electrical circuit. The core is arranged within the at least one insulating inner layer, a conductor of the first electrical circuit and a conductor of the second electrical circuit each have a winding with at least one winding turn, and the at least one winding turn of the first electrical circuit and the at least one winding turn of the second electrical circuit each run along the first conductive layer and along the second conductive layer and through the at least one insulating inner layer and through the hole of the core.

A planar, in particular intrinsically safe transformer, having: a sandwich-type layer structure having a plurality of layers extending horizontally and arranged vertically on top of one another, including a first and a second conductive layer and at least one insulating inner layer disposed between the two conductive layers, a plurality of electrical circuits, wherein a first electrical circuit and at least a second electrical circuit are galvanically isolated from each other; and at least one ring-type magnetic core having a hole, which acts at least on the first electrical circuit and the second electrical circuit. The core is arranged within the at least one insulating inner layer, a conductor of the first electrical circuit and a conductor of the second electrical circuit each have a winding with at least one winding turn, and the at least one winding turn of the first electrical circuit and the at least one winding turn of the second electrical circuit each run along the first conductive layer and along the second conductive layer and through the at least one insulating inner layer and through the hole of the core.

A micro-isolator is described. The micro-isolator may include a first isolator element, a second isolator element, and a first dielectric material separating the first isolator element from the second isolator element. A second dielectric material may completely or partly encapsulate the second isolator element, or may be present at outer corners of the second isolator element. The second dielectric material may have a larger bandgap than the first dielectric material, and its configuration may reduce electrostatic charge injection into the first dielectric material. The micro-isolator may be formed using microfabrication techniques.

A micro-isolator is described. The micro-isolator may include a first isolator element, a second isolator element, and a first dielectric material separating the first isolator element from the second isolator element. A second dielectric material may completely or partly encapsulate the second isolator element, or may be present at outer corners of the second isolator element. The second dielectric material may have a larger bandgap than the first dielectric material, and its configuration may reduce electrostatic charge injection into the first dielectric material. The micro-isolator may be formed using microfabrication techniques.

An isolation transformer includes: a Faraday cage and an input ground terminal for connecting to the Faraday cage; and an output ground terminal connected to the Faraday cage for further connection to a further circuit. The isolation trans-former further has a clean ground input terminal for receiving an external clean ground; a clean ground output terminal for connecting to a further clean ground input terminal of the further circuit; and a physical electrical node placed at a location within the Faraday cage where the magnetic flux and electric field are the lowest. The clean ground input terminal is electrically fed into the isolation transformer and connected to the physical electrical node through a first electric connection, and the physical electrical node is further electrically connected to a clean ground output terminal through a second electric connection. The invention provides for a low-EMI isolation transformer.

An isolation transformer includes: a Faraday cage and an input ground terminal for connecting to the Faraday cage; and an output ground terminal connected to the Faraday cage for further connection to a further circuit. The isolation trans-former further has a clean ground input terminal for receiving an external clean ground; a clean ground output terminal for connecting to a further clean ground input terminal of the further circuit; and a physical electrical node placed at a location within the Faraday cage where the magnetic flux and electric field are the lowest. The clean ground input terminal is electrically fed into the isolation transformer and connected to the physical electrical node through a first electric connection, and the physical electrical node is further electrically connected to a clean ground output terminal through a second electric connection. The invention provides for a low-EMI isolation transformer.

The present disclosure provides a signal convertor, which includes a circuit board, a plurality of isolation transformers, a capacitor, a signal-converting module, an electrical connection interface and a plugging interface. The isolation transformers, the capacitor, the signal-converting module are disposed on the circuit board. The signal-converting module is for converting a plugging signal received from the plugging interface into an electrical signal and transferring the electrical signal to the isolation transformers, or for converting the electrical signal received from the isolation transformers into the plugging signal and transferring the plugging signal to the plugging interface.

The present disclosure provides a signal convertor, which includes a circuit board, a plurality of isolation transformers, a capacitor, a signal-converting module, an electrical connection interface and a plugging interface. The isolation transformers, the capacitor, the signal-converting module are disposed on the circuit board. The signal-converting module is for converting a plugging signal received from the plugging interface into an electrical signal and transferring the electrical signal to the isolation transformers, or for converting the electrical signal received from the isolation transformers into the plugging signal and transferring the plugging signal to the plugging interface.

Isolators for high frequency signals transmitted between two circuits configured to operate at different voltage domains are provided. The isolators may include resonators capable of operating at high frequencies with high transfer efficiency, high isolation rating, and a small substrate footprint. In some embodiments, the isolators may operate at a frequency not less than 20 GHz, not less than 30 GHz, not less than 65 GHz, or between 20 GHz and 100 GHz, including any value or range of values within such range. The isolators may include inductive loops with slits and capacitors integrally formed at the slits. The sizes and shapes of the inductive loops and capacitors may be configured to control the values of equivalent inductances and capacitances of the isolators. The isolators are compatible to different fabrication processes including, for example, micro-fabrication and PCB manufacture processes.