The present invention relates to a metallic hard magnetic material selected from an at least binary ferromagnetic or ferrimagnetic compound, with the metallic hard magnetic material including at least two different elements selected from the group consisting of 3d and 4f elements, where the metallic hard magnetic material is under an external magnetic field B of 0.1 T.

Provided is a sputtering target, comprising: from 0.001 mol % to 0.5 mol % of Bi; from 45 mol % or less of Cr; 45 mol % or less of Pt; 60 mol % or less of Ru; and a total of 1 mol % to 35 mol % of at least one metal oxide, the balance being Co and inevitable impurities.

A virtual adhesion method is provided. The virtual adhesion method includes increasing a magnetic characteristic of an initial structure, supporting the initial structure on a surface of a substrate, generating a magnetic field directed such that the initial structure is forced toward the surface of the substrate and forming an encapsulation, which is bound to exposed portions of the surface, around the initial structure.

A virtual adhesion method is provided. The virtual adhesion method includes increasing a magnetic characteristic of an initial structure, supporting the initial structure on a surface of a substrate, generating a magnetic field directed such that the initial structure is forced toward the surface of the substrate and forming an encapsulation, which is bound to exposed portions of the surface, around the initial structure.

An FeAl alloy magnetic thin film according to the present invention contains, in terms of atomic ratio, 0% to 35% (inclusive of 0%) of Co and 1.5% to 2% of Al. A direction of a crystal contained in a material is perpendicular to a substrate surface and a crystallite size is 150 ? or less. Methods of making and using said thin film are also disclosed.

An FeAl alloy magnetic thin film according to the present invention contains, in terms of atomic ratio, 0% to 35% (inclusive of 0%) of Co and 1.5% to 2% of Al. A direction of a crystal contained in a material is perpendicular to a substrate surface and a crystallite size is 150 ? or less. Methods of making and using said thin film are also disclosed.

Provided is a core structure of an inductor element. The manufacturing method thereof is to embed a magnetic conductor including at least one magnetic conductive layer in a core body and to from a plurality of apertures for passing coils around the magnetic conductor in the core body. Accordingly, the magnetic conductor is designed in the core body by using the integrated circuit carrier board manufacturing process, such that the overall size and thickness of the inductor element can be greatly reduced, thereby facilitating product miniaturization using the inductor element.

Provided is a core structure of an inductor element. The manufacturing method thereof is to embed a magnetic conductor including at least one magnetic conductive layer in a core body and to from a plurality of apertures for passing coils around the magnetic conductor in the core body. Accordingly, the magnetic conductor is designed in the core body by using the integrated circuit carrier board manufacturing process, such that the overall size and thickness of the inductor element can be greatly reduced, thereby facilitating product miniaturization using the inductor element.

The present disclosure provides a magnetic thin film deposition chamber and a thin film deposition apparatus. The magnetic thin film deposition chamber includes a main chamber and a bias magnetic field device. A base pedestal is disposed in the main chamber for carrying a to-be-processed workpiece. The bias magnetic field device is configured for forming a horizontal magnetic field above the base pedestal, and the horizontal magnetic field is used to provide an in-plane anisotropy to a magnetized film layer deposited on the to-be-processed workpiece. The thin film deposition chamber provided in present disclosure is capable of forming a horizontal magnetic field above the base pedestal that is sufficient to induce an in-plane anisotropy to the magnetic thin film.

The present disclosure provides a magnetic thin film deposition chamber and a thin film deposition apparatus. The magnetic thin film deposition chamber includes a main chamber and a bias magnetic field device. A base pedestal is disposed in the main chamber for carrying a to-be-processed workpiece. The bias magnetic field device is configured for forming a horizontal magnetic field above the base pedestal, and the horizontal magnetic field is used to provide an in-plane anisotropy to a magnetized film layer deposited on the to-be-processed workpiece. The thin film deposition chamber provided in present disclosure is capable of forming a horizontal magnetic field above the base pedestal that is sufficient to induce an in-plane anisotropy to the magnetic thin film.