A multilayer film includes a substrate; a first magnetic layer disposed on the substrate and a second magnetic layer disposed on the first magnetic layer. The first magnetic layer includes Fe.sub.(50-80)N.sub.(10-20)B.sub.(1-20)M.sub.(0-10), wherein M is Si, Ta, Zr, Ti, Co, or a combination thereof. The second magnetic layer includes Fe.sub.(50-90)N.sub.(10-50) or Fe.sub.(60-90)N.sub.(1-10)Ta.sub.(5-30). The multilayer magnetic film has, over a frequency range of 50 MHz to 10 GHz, a magnetic permeability of greater than or equal to 1800 over a selected frequency band in the frequency range; a magnetic loss tangent of less than or equal to 0.3 over a selected frequency band in the frequency range; and a cutoff frequency of greater than or equal to 1 GHz, or greater than or equal to 2 GHz.

A method for forming a perpendicular magnetization type magnetic tunnel junction element includes forming a tunnel barrier layer on a first magnetic layer of a workpiece, cooling the workpiece on which the tunnel barrier layer is formed, and forming a second magnetic layer on the tunnel barrier layer after the cooling.

A method for forming a perpendicular magnetization type magnetic tunnel junction element includes forming a tunnel barrier layer on a first magnetic layer of a workpiece, cooling the workpiece on which the tunnel barrier layer is formed, and forming a second magnetic layer on the tunnel barrier layer after the cooling.

An FePt-based sintered sputtering target containing C and/or BN, wherein an area ratio of AgCu alloy grains on a polished surface of a cross section that is perpendicular to a sputtered surface of the sputtering target is 0.5% or more and 15% or less. An object of this invention is to provide a sputtering target capable of reducing particles generation during sputtering and efficiently depositing a magnetic thin film of a magnetic recording medium.

Provided is a Fe—Co-based alloy sputtering target material having a composition represented as an atomic ratio by the compositional formula: (Fe.sub.a—Co.sub.100-a).sub.100-b-c-d—Ta.sub.b—Nb.sub.c-M.sub.d, wherein 0<a≦80, 0≦b≦10, 0≦c≦15, 5≦b+c≦15, 2≦d≦20, 15≦b+c+d≦25, and M represents one or more elements selected from the group consisting of Mo, Cr and W, with the balance consisting of unavoidable impurities, wherein the sputtering target material has a bending fracture strain ε.sub.fB at 300° C. of 0.4% or more.

The present disclosure provides a bias magnetic field control method, a magnetic thin film deposition method, a chamber, and an apparatus. The control method includes the following step: S1, rotating the bias magnetic field device by a fixed angle along a circumferential direction of a base every first preset application time length of a target until total application time length of the target reaches an upper limit. Each time the bias magnetic field device is rotated in a same direction. With the technical solution of the bias magnetic field control method, the magnetic thin film deposition method, the chamber, and the apparatus of the present disclosure, the lifetime of the target may be increased, and the utilization rate of the target and the film thickness uniformity may be improved to reduce manufacturing cost.

The present disclosure provides a bias magnetic field control method, a magnetic thin film deposition method, a chamber, and an apparatus. The control method includes the following step: S1, rotating the bias magnetic field device by a fixed angle along a circumferential direction of a base every first preset application time length of a target until total application time length of the target reaches an upper limit. Each time the bias magnetic field device is rotated in a same direction. With the technical solution of the bias magnetic field control method, the magnetic thin film deposition method, the chamber, and the apparatus of the present disclosure, the lifetime of the target may be increased, and the utilization rate of the target and the film thickness uniformity may be improved to reduce manufacturing cost.

A CoPt-oxide-based in-plane magnetized film having a magnetic coercive force of 2.00 kOe or more and remanent magnetization per unit area Mrt of 2.00 memu/cm.sup.2 or more. The in-plane magnetized film for use as a hard bias layer of a magnetoresistive element contains metal Co, metal Pt, and an oxide. The in-plane magnetized film contains the metal Co in an amount of 55 at % or more and less than 95 at % and the metal Pt in an amount of more than 5 at % and 45 at % or less relative to a total of metal components of the in-plane magnetized film, and contains the oxide in an amount of 10 vol % or more and 42 vol % or less relative to a whole amount of the in-plane magnetized film. The in-plane magnetized film has a thickness of 20 nm or more and 80 nm or less.

A CoPt-oxide-based in-plane magnetized film having a magnetic coercive force of 2.00 kOe or more and remanent magnetization per unit area Mrt of 2.00 memu/cm.sup.2 or more. The in-plane magnetized film for use as a hard bias layer of a magnetoresistive element contains metal Co, metal Pt, and an oxide. The in-plane magnetized film contains the metal Co in an amount of 55 at % or more and less than 95 at % and the metal Pt in an amount of more than 5 at % and 45 at % or less relative to a total of metal components of the in-plane magnetized film, and contains the oxide in an amount of 10 vol % or more and 42 vol % or less relative to a whole amount of the in-plane magnetized film. The in-plane magnetized film has a thickness of 20 nm or more and 80 nm or less.

The magnetic memory element (100) includes: a conductive layer that includes a heavy metal layer (10) containing a 5d transition metal; a first ferromagnetic layer (20) that is adjacent to the conductive layer and contains a ferromagnetic layer having a reversible magnetization; a barrier layer (30) that is adjacent to the first ferromagnetic layer (20) and includes an insulating material; a reference layer (40) that is adjacent to the barrier layer (30) and has at least one second ferromagnetic layer (41) having a fixed magnetization direction; a cap layer (50) that is adjacent to the reference layer (40) and includes a conductive material; a first terminal (T1) that is capable of introducing a current into one end of the heavy metal layer (10) in the longitudinal direction; a second terminal (T2) that is capable of introducing a current into the other end of the heavy metal layer (10) in the longitudinal direction; and a third terminal (T3) that is capable of introducing a current into the cap layer (50).