Provided is a rare earth thin film magnet having Nd, Fe and B as essential components, which is characterized in that a NdFeB base film is formed on a Si substrate having an oxide film formed on a surface thereof and has a composition in which the Nd content is higher than that of a stoichiometric composition and that a film (nano composite film) is formed on the base film and has a texture in which an -Fe phase and Nd.sub.2Fe.sub.14B are alternately arranged and three-dimensionally dispersed. The rare earth thin film magnet provided is less susceptible to the occurrence of film separation and substrate breakage and exhibits favorable magnetic properties.

Provided is a rare earth thin film magnet having Nd, Fe and B as essential components, which is characterized in that a NdFeB base film is formed on a Si substrate having an oxide film formed on a surface thereof and has a composition in which the Nd content is higher than that of a stoichiometric composition and that a film (nano composite film) is formed on the base film and has a texture in which an -Fe phase and Nd.sub.2Fe.sub.14B are alternately arranged and three-dimensionally dispersed. The rare earth thin film magnet provided is less susceptible to the occurrence of film separation and substrate breakage and exhibits favorable magnetic properties.

A magnetic artificial honeycomb lattice comprising a multiplicity of connecting elements separated by hexagonal cylindrical pores, wherein: (a) the hexagonal cylindrical pores: (i) have widths that are substantially uniform and an average width that is in a range of about 15 nm to about 20 nm; and (ii) are substantially equispaced and have an average center-to-center distance that is in a range of about 25 nm to about 35 nm; and (b) the connecting elements comprise a magnetic material layer, and the connecting elements have: (i) lengths that are substantially uniform and an average length that is in a range of about 10 nm to about 15 nm; (ii) widths that are substantially uniform and an average width that is in a range of about 4 nm to about 8 nm; and (iii) a thickness of the magnetic material layer that is substantially uniform and an average thickness that is in a range of about 2 nm to about 8 nm; and (c) the magnetic artificial honeycomb lattice has a surface area, disregarding the presence of the hexagonal cylindrical pores, that is in a range in a range of about 100 mm.sup.2 to about 900 mm.sup.2.

A magnetic artificial honeycomb lattice comprising a multiplicity of connecting elements separated by hexagonal cylindrical pores, wherein: (a) the hexagonal cylindrical pores: (i) have widths that are substantially uniform and an average width that is in a range of about 15 nm to about 20 nm; and (ii) are substantially equispaced and have an average center-to-center distance that is in a range of about 25 nm to about 35 nm; and (b) the connecting elements comprise a magnetic material layer, and the connecting elements have: (i) lengths that are substantially uniform and an average length that is in a range of about 10 nm to about 15 nm; (ii) widths that are substantially uniform and an average width that is in a range of about 4 nm to about 8 nm; and (iii) a thickness of the magnetic material layer that is substantially uniform and an average thickness that is in a range of about 2 nm to about 8 nm; and (c) the magnetic artificial honeycomb lattice has a surface area, disregarding the presence of the hexagonal cylindrical pores, that is in a range in a range of about 100 mm.sup.2 to about 900 mm.sup.2.

A method of fabricating a semiconductor device includes aligning an alignment structure of a wafer to a direction of a magnetic field created by an external electromagnet and depositing a magnetic layer (e.g., NiFe) over the wafer in the presence of the magnetic field and while applying the magnetic field and maintaining a temperature of the wafer below 150 C. An insulation layer (e.g., AlN) is deposited on the first magnetic layer. The alignment structure of the wafer is again aligned to the direction of the magnetic field and a second magnetic layer is deposited on the insulation layer, in the presence of the magnetic field and while maintaining the temperature of the wafer below 150 C.

A method of fabricating a semiconductor device includes aligning an alignment structure of a wafer to a direction of a magnetic field created by an external electromagnet and depositing a magnetic layer (e.g., NiFe) over the wafer in the presence of the magnetic field and while applying the magnetic field and maintaining a temperature of the wafer below 150 C. An insulation layer (e.g., AlN) is deposited on the first magnetic layer. The alignment structure of the wafer is again aligned to the direction of the magnetic field and a second magnetic layer is deposited on the insulation layer, in the presence of the magnetic field and while maintaining the temperature of the wafer below 150 C.

An electronic component includes an element body made of a composite material of a resin material and metal powder. A plurality of particles of the metal powder are exposed from the resin material and make contact with one another on the outer surface of the element

When a slurry 41 obtained by dispersing a rare-earth-compound powder in a solvent is applied to sintered magnet bodies 1, and dried to remove the solvent in the slurry and cause the surfaces of the sintered magnet bodies to be coated with the powder, and the sintered magnet bodies coated with the powder are heat treated to cause the rare-earth element to be absorbed by the sintered magnet bodies, the sintered magnet bodies having had the slurry applied thereto are dried by being irradiated with near infrared radiation having a wavelength of 0.8-5 m, to remove the solvent in the slurry, and cause the surfaces of the sintered magnet bodies to be coated with the powder. As a result, the rare-earth-compound powder can be uniformly and efficiently applied to the surfaces of the sintered magnet bodies.

When a slurry 41 obtained by dispersing a rare-earth-compound powder in a solvent is applied to sintered magnet bodies 1, and dried to remove the solvent in the slurry and cause the surfaces of the sintered magnet bodies to be coated with the powder, and the sintered magnet bodies coated with the powder are heat treated to cause the rare-earth element to be absorbed by the sintered magnet bodies, the sintered magnet bodies having had the slurry applied thereto are dried by being irradiated with near infrared radiation having a wavelength of 0.8-5 m, to remove the solvent in the slurry, and cause the surfaces of the sintered magnet bodies to be coated with the powder. As a result, the rare-earth-compound powder can be uniformly and efficiently applied to the surfaces of the sintered magnet bodies.

A single-crystalline LnBM.sub.2O.sub.5+ or LnBM.sub.2O.sub.5.5+ compound is provided, which includes an ordered oxygen vacancy structure; wherein Ln is a lanthanide, B is an alkali earth metal, M is a transition metal, O is oxygen, and 01. Methods of making and using the compound, and devices and compositions including same are also provided.