The present disclosure provides a multi-layer coil structure, an inductor, and a method for manufacturing the multi-layer coil structure. The multi-layer coil structure includes subcoils arranged in a stacked manner, where each subcoil includes a bottom coil, an insulating film, and a top coil, a contact is arranged in a through hole of the insulating film, outer surfaces of the bottom coil and the top coil are both provided with an insulating layer, and the insulating layer is provided with a via hole; via holes in adjacent subcoils are aligned with each other, and metal contacts are arranged in the via holes. The problem of insulation in a multi-layer multi-turn coil is solved.

The present disclosure provides a multi-layer coil structure, an inductor, and a method for manufacturing the multi-layer coil structure. The multi-layer coil structure includes subcoils arranged in a stacked manner, where each subcoil includes a bottom coil, an insulating film, and a top coil, a contact is arranged in a through hole of the insulating film, outer surfaces of the bottom coil and the top coil are both provided with an insulating layer, and the insulating layer is provided with a via hole; via holes in adjacent subcoils are aligned with each other, and metal contacts are arranged in the via holes. The problem of insulation in a multi-layer multi-turn coil is solved.

A semiconductor structure includes a first plurality of slanted features within a first region of a substrate. Two or more magnetic guiding structures are embedded within the first region of the substrate. The first plurality of slanted features is located between the two or more magnetic guiding structures for varying a magnetic field strength around the first plurality of slanted features. A second plurality of slanted features are located within a second region of the substrate. The second region of the substrate is adjacent to the first region of the substrate. The second plurality of slanted features include a second orientation angle that is different from a first orientation angle of the first plurality of slanted features.

A semiconductor structure includes a first plurality of slanted features within a first region of a substrate. Two or more magnetic guiding structures are embedded within the first region of the substrate. The first plurality of slanted features is located between the two or more magnetic guiding structures for varying a magnetic field strength around the first plurality of slanted features. A second plurality of slanted features are located within a second region of the substrate. The second region of the substrate is adjacent to the first region of the substrate. The second plurality of slanted features include a second orientation angle that is different from a first orientation angle of the first plurality of slanted features.